LOGIC LEVEL GATE DRIVE MOSFET Search Results

Contextual Info: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device

Contextual Info: AUIRLS4030 AUIRLSL4030 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: AUIRLS4030 AUIRLSL4030 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements

Contextual Info: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements

NTE2985

Contextual Info: NTE2985 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements

NTE2986

Contextual Info: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements

NTE2984

Abstract: 110mJ
Contextual Info: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements

Contextual Info: AUIRLS4030-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: HPLR3103, HPLU3103 Semiconductor 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

NTE2987

Contextual Info: NTE2987 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS on = 0.09Ω Typ. at VGS = 5V D +175°C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability

Contextual Info: HAJims HPLR3103, HPLU3103 S e m ico n d ucto r 7 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

HUF76107P3

Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

HUF76107P3

Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
Contextual Info: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
Contextual Info: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

n13 sot 23

Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

intersil 76131SK8

Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

TA7613

Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the