LNA X BAND Search Results

RF3858

Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
Contextual Info: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31

LNA x-band

Abstract: TGA2600-EPU
Contextual Info: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates

Contextual Info: CMH82 Preliminary Datasheet ? High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process CDMA ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -12.0 to 0 dBm IF LNA ? Operating voltage range: 2.7 to 4 V

QFN-20

Abstract: gaas Low Noise Amplifier High IP3 Low-Noise Amplifier mesfet low noise DSB060726 QFN20 RF3863 RF3867 rf 4*4 mm QFN bluetooth bandwidth and noise figure
Contextual Info: RF3867DualChannel, Wide Bandwidth, High Linearity Low Noise Amplifier RF3867 Proposed DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Package Style: QFN, 20-Pin, 5 mm x 5 mm „ „ „ CDMA, PCS, DCS, UMTS LNA WLAN LNA General Purpose Amplification

rf 4*4 mm QFN

Abstract: gaas Low Noise Amplifier DSB060323 RF3863
Contextual Info: RF3863Wide Bandwidth, High Linearity Low Noise Amplifier RF3863 Proposed WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm „ „ „ „ „ First Stage CDMA, PCS, ECS, UMTS LNA/Linear Driver First Stage WLAN LNA/Linear

L5 marking

Abstract: 800 mhz Cellular amplifier circuit diagram
Contextual Info: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

CMOS LNA at 2.4 GHz

Abstract: RF5511 9421 rf mems switch SiGE wlan LNA
Contextual Info: RF5511 Proposed 3.3 V, SWITCH AND LNA FRONT END SOLUTION Package Style: FLIP CHIP, 11 PIN, 1 x 1 x 0.4 mm Features „ „ „ „ Single Die Front End Solution Single Supply Voltage 3.0 V to 4.5 V Integrated SP3T Switch and LNA with Bypass Typical gain is 11 dB and

CAP 0402

Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Contextual Info: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

Contextual Info: CMH192 Preliminary Datasheet ? High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process IF Out ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -9.0 to 0 dBm ? Operating voltage range: 2.7 to 4 V

QFN-12

Abstract: RF5501 LNA in WLAN SiGE wlan LNA WLAN MESFET
Contextual Info: RF5501 Proposed 3.3 V, SWITCH AND LNA FRONT END SOLUTION Package Style: QFN, 12-pin, 2 mm x 2 mm x 0.5 mm Features „ „ „ „ Single Die Front End Solution Single Supply Voltage 3.0 V to 4.5 V Integrated SP3T Switch and LNA with Bypass Typical gain is 12 dB and

Infineon CMH192 GaAs

Abstract: CMH192 mmic MIXER 210
Contextual Info: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm

Contextual Info: CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -9.0 to 0 dBm

PG311

Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm

Contextual Info: RF5501 3.3 V, SWITCH AND LNA FRONT END SOLUTION Package Style: QFN, 12-pin, 2 mm x 2 mm x 0.5 mm Features     Single Supply Voltage 3.0 V to 4.5 V Integrated SP3T Switch and LNA with Bypass Typical Gain is 11 dB and 2.0 dB NF in RX Mode Pin-toPin

Contextual Info: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V

CMH0819

Abstract: VQFN-24
Contextual Info: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm

mmic c8

Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm

CMH82

Abstract: cdma LNA marking A 10K ohms 0805 package
Contextual Info: CMH82 Preliminary Datasheet • High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process CDMA • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -12.0 to 0 dBm IF

CMH82

Abstract: MMIC code -03
Contextual Info: GaAs MMIC CMH82 Preliminary Datasheet • High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process CDMA • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -12.0 to 0 dBm

schematic diagram receiver satellite

Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: S E M I C O N D U C T O R , WIRELESS I N C COMMUNICATIONS LNA OUT 1900 Vdd M X R 1900 M XR LO 1900 Dual-Band TDMA Downconverter IC LNA OUT V dd M XR LO 800 M X R 800 800 The TQ9222 is a 3-V, RF receiver IC designed specifically for dual-band TDMA applications. Its RF performance meets the requirements of products designed to the

SKY65050-372LF

Abstract: S1408 S1410 VT47 S1417
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram

s1412

Abstract: SKY65051-377LF S1416 VT47
Contextual Info: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65051-377LF Block Diagram

SKY65050-372LF

Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram