LNA MARKING R0 Search Results

QFN12

Abstract: MC13770 PC13770FC QFN-12
Contextual Info: Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package PC13770FC PC70 QFN-12 The MC13770 is a LNA Downconverter designed specifically for WCDMA handsets. The

MC13770

Abstract: PC13770FC QFN-12 LNA marking R0
Contextual Info: Freescale Semiconductor, Inc. Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package

Contextual Info: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

smd resistor 0402 footprint dimension

Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

TGS 880

Abstract: INFINEON PART MARKING BGA751L7 S12L
Contextual Info: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

BGA751L7

Contextual Info: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

TGS 2620

Abstract: UMTS transistor TGS 2600
Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

smd resistor 0402 footprint dimension

Abstract: BGA711L7
Contextual Info: Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A 2100, 1900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.

Contextual Info: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity

MGA-65606

Contextual Info: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity

FREESCALE MARKING C3

Abstract: QFN-12 MC13770 MC13770FC
Contextual Info: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for

Contextual Info: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for

freescale semiconductor body marking

Abstract: QFN-12 1.5
Contextual Info: Freescale Semiconductor Technical Data MC13770/D Rev. 2, 11/2003 MC13770 Scale 2:1 MC13770 Package Information Plastic Package Case 1345 (QFN-12) Single Band LNA and Mixer FEIC Ordering Information 1 Introduction The MC13770 is a single band front-end IC designed for

LNA MARKING 4F

Abstract: 7313 28 pin MGA-645T6 marking 6 180 722 10-pin A004R
Contextual Info: MGA-645T6 Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-645T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and

RO4850

Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

MGA-64606

Contextual Info: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München