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Dynex Semiconductor Abstract: DFM1200EXS12-A000 Contextual Info: DFM1200EXS12-A000 Fast Recovery Diode Module DS5851-1.2 June 2008 LN26169 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS	Original	DFM1200EXS12-A000 DS5851-1 LN26169) DFM1200EXS12-A000 Dynex Semiconductor	PDF

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Dynex Semiconductor

Abstract: DFM1200EXS12-A000
Contextual Info: DFM1200EXS12-A000 Fast Recovery Diode Module DS5851-1.2 June 2008 LN26169 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS

Original

DFM1200EXS12-A000 DS5851-1 LN26169) DFM1200EXS12-A000 Dynex Semiconductor

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