LN15 Search Results

Contextual Info: Panasonic Infrared Light Emitting Diodes LN151F, LN151L Unit : 111111 LN151F ^4.6±0.15 G aAs Infrared Light Em itting Diodes Glass window / - ?in For optical control systems I f 2-0O.45±O.O5 • Features • High-power output, high-efficiency : PQ = 7.5 mW typ.

Contextual Info: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 1. • Features 0. 15 1. 0± ° 2 1 φ5.75 max.

Contextual Info: Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1. • High-power output, high-efficiency: PO = 10 mW typ. • Wide directivity, matched for external optical systems: θ = 90°

L15X60

Abstract: LN15XB60
Contextual Info: 低ノイズタイプ シングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長

LN159

Abstract: LN59 LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° M Di ain sc te on na tin nc ue e/ d 8° 0.5 max. 8° 8° 0.8 8° 2.4±0.2 2-R0.7 1.0 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature

LN151F

Abstract: LN151L
Contextual Info: Infrared Light Emitting Diodes LN151F, LN151L LN151F Unit : mm ø4.6±0.15 Glass window 4.5±0.2 GaAs Infrared Light Emitting Diodes 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 7.5 mW typ. 2.54±0.25

LN151F

Abstract: LN151L LNA2402L LNA2403F
Contextual Info: Infrared Light Emitting Diodes LNA2403F Unit : mm 4.6 0.15 Glass window 4.5 0.2 LNA2403F, LNA2402L LN151F, LN151L 12.7 min. GaAs Infrared Light Emitting Diodes For optical control systems Features 2- 0.45 0.05 2.54 0.25 1. High-power output, high-efficiency : PO = 7.5 mW (typ.)

sr 100/25

Abstract: LN159 LN59 LNA2701L
Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 0.5 max. 2.8±0.2 8° 1.3±0.2 8° 0.8 φ1.4±0.2 Pulse forward current * Power dissipation Operating ambient temperature Storage temperature

duty control

Abstract: LN155 LNA2603F
Contextual Info: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)

GaAs 1000 nm Infrared Diode

Abstract: GaAs 850 nm Infrared Emitting Diode LN152
Contextual Info: Panasonic Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode U nit : mm For optical control systems \ ! r — i— • Features • H igh-pow er output, high-efficiency : P Q = 10 mW typ. • W ide directivity, m atched for external optical systems : 0 = 100 deg.

l15x60h

Abstract: l15x60 LN15XB60H
Contextual Info: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60H Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長

Contextual Info: Infrared Light Emitting Diodes LNA2603F LN155 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 1.5±0.2 0.3 max. 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.8) 3.9±0.25 • High-power output, high-efficiency: PO = 6 mW (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm +0.2 φ5.35 -0.1 +0.1 0.2±0.05 0± 0. 1 5 .1 +0 0.1 0- 1. 2.0±0.1 2-φ0.45±0.05 1.

Contextual Info: SHINDENGEN General Purpose Rectifiers LN15XB60H iLow Noise Bridges OUTLINE DIMENSIONS Case : 5S Unit : mm 600V 25A RATINGS Absolute Maximum Ratings (Unless otherwise specified, Tc=25Žj Symbol Conditions @Item Tstg Storage Temperature Tj Operating Junction Temperature

Contextual Info: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L 12.7 min. 6.3±0.3 Glass lens GaAs Infrared Light Emitting Diodes 2-φ0.45±0.05 M Di ain sc te on na tin nc ue e/ d For optical control systems 2.54±0.25 100 mA 2 A °C ce /D isc

LN150WP38

Abstract: LNG150WHA
Contextual Info: Two Color Lighting Square Type 5.0 mm x 5.0 mm Series Lighting Color LN150WP38 •············ LNG150WHA ···· Green. Orange 1.0 2.75 6.25 5.4 ± 0.2 25.0 ± 1.0 9.0 ± 0.2 1.5 Max 2 − 1.1 Max • Absolute Maximum Ratings Ta = 25°C 3 − 0.5 ± 0.1

Contextual Info: 低ノイズタイプ シングルインライン型 Bridge Diode Low Noise type Single In-line Package •外観図 OUTLINE LN15XB60 Unit : mm Weight : 7.1g （typ.） Package：5S 600V 15A 管理番号（例） Control No. 品名略号 Type No. 特長

Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%

15XB60

Contextual Info: Bridge Diode Low Noise type Single In-line Package •W IN -äsia Package : 5S OUTLINE DIMENSIONS LN15XB60 Unit : mm 600V 15A 4.6 ±a2 T y p e No. D ate code @ L15X60 45 £1 •S IP ilv tr-V ~r 23 2.5*02 2,7 ±a2 0.7 ±ai 7.5 10*^ CD D .7.5 CD © (« fiL tC D S rö E O L Y C tt, Ü E P tt« £ C !B lS <

LN155

Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors XP = 940 nm (typ.)

L15X60

Contextual Info: 低ノイズタイプ シングルインライン型 ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package：5S Unit : mm Weight：7.1g（typ.） LN15XB60 管理番号（例） Control No.

l15x60h

Abstract: L15X60
Contextual Info: 低ノイズタイプ シングルインライン型 ブリッジダイオード Low Noise type Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Unit : mm Weight：7.1g（typ.） Package：5S LN15XB60H 管理番号（例） Control No.