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    SumitomoElectric ELM7785-4PST

    HighPowerGaAsFETs,CBand:7.7~8.5GHz,36.0dBm,1100mA
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    Chip Stock ELM7785-4PST 809
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    SumitomoElectric FLM7785-4F

    RFPowerField-EffectTransistor,1-Element,CBand,GalliumArsenide,N-Channel,JunctionFET
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    Chip Stock FLM7785-4F 275
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    SUMITOMO ELECTRIC Interconnect Products FLM7785-4F

    High Power GaAs FETs, C-Band, 8.5dB, 7.7 8.5GHz, 1100mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLM7785-4F 150
    • 1 $812.50
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    • 100 $812.50
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    LM778 Datasheets Context Search

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    lm778

    Abstract: LM776 1I600
    Contextual Info: LM776 National Semiconductor LM776 Multi-Purpose Programmable Operational Amplifier General Description Features The LM776 Programmable Operational Amplifier is con­ structed using the Planar Epitaxial process. High input im­ pedance, low supply currents, and low input noise over a


    OCR Scan     		LM776 LM776 LM741. lm778 1I600 PDF