LJ MARKING TRANSISTOR Search Results

CMBT2369

Abstract: np TRANSISTOR smd SOT23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

np TRANSISTOR smd SOT23

Abstract: smd transistor marking np CMBT2369
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

npn, transistor, sc 107 b

Abstract: 2sc low noise NF TRANSISTOR
Contextual Info: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages 2SC3838K (SMT3) package marking: JO — 2SC3838K; AD^, where ★ is hFE code Lj — 2SC4083; 1D-*, where ★ is hFE code

XWs transistor

Abstract: xws 03
Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C

bf579

Contextual Info: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion

DRA2144V0L

Contextual Info: DRA2144V Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144V Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: LJ

BFR35AP

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR35AP Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900 MHz • High Gain I S21e I 2 = 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz

Contextual Info: TOSHIBA HN1K02FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN1 K02FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2 . 1 ± 0.1 ANALOG SWITCH APPLICATIONS 1. 2 5 + 0.1 *1 e- 2.5 Volts Gate Drive. Low Threshold Voltage : Vth = 0.5~1.5V High Speed

Contextual Info: TOSHIBA TPC8402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE tt-MOSVI / U-MOS H TPC8402 LITHIUM ION SECONDARY BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS U nit in mm PORTABLE DEVICES SOP-8 • nn n Low Drain-Source ON Resistance • P fTRAlNnVTFJ,

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are

2SA1669

Abstract: S121 transistor 2S D 716 marking BS
Contextual Info: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure

2SK2602

Abstract: SC-65
Contextual Info: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : R d S (O N )“ 0.9O (Typ.)

bc238c

Abstract: mosfet marking code AL sot-23 S-691
Contextual Info: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

Contextual Info: KSR1101 NPN EPJTAXIAL SILICON TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, «4.7U1, R*=4.7kû) • Complement to KSR2101 SO T-23 ABSO LU TE MAXIMUM RATINGS (TA=25'C)

transistor marking zg

Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor
Contextual Info: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general

Contextual Info: TOSHIBA 2SC4207 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC42Q7 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. + 0.2 2.8 '0 .3 Small Package (Dual Type) High Voltage and High current : VCEO = 50V, I c = 150mA (Max.)

transistor 6Cp

Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
Contextual Info: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

marking LJ

Abstract: BF579 60n4
Contextual Info: PNP Silicon RF Transistor • • BF 579 Suitable for low distortion, low noise VHF/UHF amplifier and UHF oscillator applications in TV tuners High transition frequency of 1.6 GHz at typical operating current of 10 mA Type Marking Ordering code for versions in bulk

transistor WL 431

Abstract: 2N700A BUV pnp 50a MW1131
Contextual Info: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,

marking NC sot23

Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Contextual Info: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

143-E

Abstract: D143EK H200
Contextual Info: DTD143EK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD143EK (SMT3) package marking: DTD143EK; F23 a built-in bias resistor allows inverter circuit configuration without external input resistors

Contextual Info: DTB113EK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package package marking: DTB113EK; F11 a built-in bias resistor allows inverter circuit configuration without external input resistors DTB113EK (SMT3)

Contextual Info: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA

Contextual Info: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz