LJ MARKING SOT23 Search Results

CMBT2369

Abstract: np TRANSISTOR smd SOT23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

np TRANSISTOR smd SOT23

Abstract: smd transistor marking np CMBT2369
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

DRA2144V0L

Contextual Info: DRA2144V Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144V Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: LJ

XWs transistor

Abstract: xws 03
Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C

bf579

Contextual Info: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion

transistor marking hy

Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. Programmable Precision Reference LR431ATSLT1G  ' 6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

LR431

Abstract: A7TA LR431BLT1 WZR device marking lr431 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. LR431AP R H LT1G LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LV D WKUHHWHUPLQDO DGMXVWDEOH  LRC L RR1APHLT1G  DJXDUDQWHHGWKHUPDO VWDELOLW\  RYHU  DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. LINEAR INTEGRATED CIRCUIT LTL431APHLT1G  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21 7KH LV D WKUHHWHUPLQDO DGMXVWDEOH  LTL431APHLT1G  DJXDUDQWHHGWKHUPDO VWDELOLW\  RYHU  DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

LTL431

Abstract: A7TA tic 2250 TE 2482 9T SOT23 c 2482 LTL431ATLT1G R1 SOT23 C2002 marking HG
Contextual Info: LESHAN RADIO COMPANY, LTD. LTL431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LTL LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

a7ta

Abstract: RA3 SOT23 sot-23 marking ra3 LR431ALT1G LR431ATLT1G lr431 sot-23 TE 2482 LR431APTLT1G LR431 tic 2250
Contextual Info: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  3 '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

P2B marking sot23

Abstract: p2b sot23 P2d MARKING CODE R7 SOT23
Contextual Info: Central" CMPS5061 CMPS5062 CMPS5063 CMPS5064 Semiconductor Corp. DESCRIPTION: SURFACE MOUNT SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and

A7TA

Abstract: tic 2250 1 L 0380 R lr431alt LR431 LR431BLT1 marking UA sot-23 LR431ALT1 SOT-23 C2002 MARKING LJ
Contextual Info: LRC LESHAN RADIO COMPANY,LTD. LR431 LINEAR INTEGRATED CIRCUIT  352*5$00$%/ 35(&,6,21 5( (5(1&(  '(6&5,37,21  7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\

marking code CM

Contextual Info: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 S e m ic o n d u c to r Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

TRANSISTOR SMD MARKING CODE SP

Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL

smd transistor marking 2y

Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2

TE85

Contextual Info: III. TAPING FOR SOT-23MOD PACKAGE PACKAGING METHOD A. The tape dimensions are per figure 3-1. Unit in m m Fig. 3-1 Note 1. Note 2. Accumulated pitch tolerance is ±0.2rtun/10 pitch. No splices allowed in either the carrier tape or cover tape. Part orientation in the carrier tape shall be as shown in figure 3-2.

ERMA 110

Abstract: marking W4 marking W4 N marking l42
Contextual Info: 03/11/99 13:58:44 Page Diodes 80&-446-48SB->683800193Z C880193ZZ BightFftX BAT54 I A 1C IS SURFACE MOUNT SCHOTTK BARRIER DIODE Features Low Tum-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Mechanical Data_

lj marking sot23

Abstract: SOT23 marking sk lm4040 2.5 marking SK SOT23 sot-23 MARKING CODE SP lm4040
Contextual Info: PRECISION MICROPOWER BANDGAP SHUNT REFERENCE TEL: 805-498-2111 LM4040-2.5 FAX: 805-498-3804 SYMBOL FEATURES • Small SOT-23 package • Wide Operating Current Range 60pA to 150mA • Low Dynamic Output Impedance 0.8S2 Max. • Low Temperature Coefficient

Contextual Info: >ki>jxiyki /9-0458; Rev 7/ 9/96 Low-Cost, Micropower, Precision, 3-Terminal, 1.2V Voltage Reference General Description The MAX6120 operates from a supply voltage as low as 2.4V, and initial accuracy is ±1% for the SOT23 pack­ age. Output voltage temperature coefficient is typically