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    LIGHT EMITTING DIODE Search Results

    LIGHT EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS298/BEA
    Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F257/BEA
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) PDF Buy
    54F257/BFA
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BFA) PDF Buy
    54F257/B2A
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906B2A) PDF Buy

    LIGHT EMITTING DIODE Datasheets (1)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Light Emitting Diodes
    Infineon Technologies Soldering conditions, absolute max. ratings, typical values Original PDF 39.14KB 7

    LIGHT EMITTING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    lg led tv electronic diagram

    Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
    Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .


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    Q62901B0065

    Abstract: Q62902B0152F222 Q62902B0156F222 A671 transistor lrtbg6sg Q65110A4187 osram LW Y3SG OSRAM Q62902B0152F222 Q65110A1890 Q62901B0062
    Contextual Info: kakakak Light Emitting Diodes Lumineszenzdioden 75 Light Emitting Diodes .Lumineszenzdioden . 75 Safety Instructions .


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    AP 1100 R1

    Abstract: LN58
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :


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    infrared detectors

    Abstract: Infrared Emitting Diode LNA2601L
    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


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    LNA2601L infrared detectors Infrared Emitting Diode LNA2601L PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors


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    LN66F PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :


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    V30K20

    Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :


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    LN66F

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors


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    LN66F LN66F PDF

    a950

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LN66F 0102Q. a950 PDF

    Q62902-B152-F222

    Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
    Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema


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    12-mm Q62902-B141-F222 GPXY6739 Q62902-B155-F222 GPXY6738 Q62902-B152-F222 Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1 PDF

    Q62902-B152-F222

    Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
    Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.


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    12-mm Q62902-B141-F222 GPXY6739 Q62902-B155-F222 GPXY6738 Q62902-B152-F222 Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676 PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)


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    LN172 100mA PDF

    IR Blue Light infrared

    Abstract: LN66
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


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    100mA IR Blue Light infrared LN66 PDF

    LNA2801L

    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


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    LNA2801L LNA2801L PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)


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    LN155 PDF

    LN66A

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LN66A 0102Q. LN66A PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LNA2801L 0102Q. PDF

    LN172

    Abstract: Infrared Emitting Diode DSA003761
    Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.


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    LN172 100Hz LN172 Infrared Emitting Diode DSA003761 PDF

    LN69

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)


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    LN155

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors XP = 940 nm (typ.)


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    LN155 LN155 PDF

    LN172

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : X P = 900 nm (typ.)


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    LN172 100mA 100Hz LN172 PDF

    LN68

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


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    Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)


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    LN189S

    Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


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    LN189S LN189S PDF