LIGHT COUNTRY Search Results

LN184

Abstract: 24525
Contextual Info: Infrared Light Emitting Diodes LN184 Unit : mm M Di ain sc te on na tin nc ue e/ d , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Features Spherical lens Infrared light emission close to monochromatics light : λP = 880 nm

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

Contextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf = 20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)

LN162S

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Infrared light emission close to monochromatic light: λP = 950 nm (typ.)

gp2ap054a00f

Abstract: dark light sensor using LDR
Contextual Info: GP2AP054A00F GP2AP054A00F Proximity/Gesture Sensor with Integrated Ambient Light Sensor •Agency approvals/Compliance ■Description GP2AP054A00F is Gesture and Proximity Sensor with Ambient Light Sensor. Ambient light sensor detects the brightness. Proximity sensor detects presence of object.

Contextual Info: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems 1 0.4±0.1 0.6 0.2 1.0 3.0±0.2 0.6±0.1 Forward current DC Pulse forward current * Reverse voltage (DC) Operating ambient temperature

Contextual Info: Compact Type4 PLe SIL3 Light Curtain SF4B-C SERIES Conforming to Machine & EMC Directive Certified Conforming to OSHA/ANSI Introducing the Type 4 Compact Light Curtain 2013.12 panasonic.net/id/pidsx/global Certified by NRTL Certified Compact, light weight design,

SLA-560

Abstract: SLA560 SLA560BBT3F SLA560EBT TSZ22111 TSZ22111-04 bat series diodes rohm packing and forming
Contextual Info: PRODUCTS TYPE PAGE Visual Light Emitting Diodes SLA560EBT / 1. CONSTRUCTION InGaN on SiC green visual light emitting diodes packaged with colorless epoxy. 2. USAGE Source of light for display unit. 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS Power Dissipation

Contextual Info: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors

Contextual Info: ZigBee Light Link User Guide JN-UG-3091 Revision 1.1 14 August 2013 ZigBee Light Link User Guide 2 NXP Laboratories UK 2013 JN-UG-3091 v1.1 ZigBee Light Link User Guide Contents About this Manual 9 Organisation Conventions Acronyms and Abbreviations Related Documents

f3sj Test Rod

Abstract: F3SP-B1P humidity sensor philips H1 OMRON plc programming console manual F39-JC3B-L F39-JC3B F39-JC3A g7sa wiring diagram LX 1792 A1627
Contextual Info: Short-range Safety Light Curtain Type 4 F3SN-A@SS Greater resistance to external light interference. Significantly less interference with other sensors. • Interference reduced both between Sensors of the same type and Sensors of different types. ■ Setting Console Optimizes Light Sensitivity for Specific

SLA560

Abstract: SLA560BBT SLA560BBT3F TSZ22111 marking 02 information lot
Contextual Info: PRODUCTS VISUAL LIGHT E M im N G DIODE - TYPE SLA560BBT 1. CONSTRUCTION 2. USAGE Source o f light for display unit 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS 6 / InGaN on SiC blue visual light emitting diodes packaged with colorless epoxy. Ta=25°C

LN66F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

LN189M

Contextual Info: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems 1 0.4±0.1 PD 160 mW Forward current DC IF 90 mA IFP 175 mA Reverse voltage (DC) VR 3 V Operating ambient temperature Topr −25 to +85

LN69

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 3.5 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

Orion

Abstract: LA12
Contextual Info: LE. http://www.optosign.com/page3.html Page 1 of 2 16/01/04 Orion Light Stripes. Page 1 of 2 Orion : Linear LED Light System. l Innovative linear light system fo interior and exterior lighting sys l High intensity LED technology. l Interior cove or archway lightin

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2W01L (LN57) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 4.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

PO 102

Abstract: LN58
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 3.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

LN68

Abstract: LNA2802L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.6±0.2 5.5±0.2 1.0 4.5±0.3 15.5±1.0 • High-power output, high-efficiency: Ie = 6 mW/sr min. • Emitted light spectrum suited for silicon photodetectors

FC-10 matsushita

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66ANC GaAlAs Infrared Light Emitting Diode For remote control systems • Features  High-power output, high-efficiency: PO = 12 mW (typ.)  Emitted light spectrum suited for silicon photodetectors

LNA2904L

Abstract: LN166
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 10 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors