LIGHT COUNTRY Search Results

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)

Contextual Info: Compact Type4 PLe SIL3 Light Curtain SF4B-C SERIES Conforming to Machine & EMC Directive Certified Conforming to OSHA/ANSI Introducing the Type 4 Compact Light Curtain 2013.12 panasonic.net/id/pidsx/global Certified by NRTL Certified Compact, light weight design,

Contextual Info: ZigBee Light Link User Guide JN-UG-3091 Revision 1.1 14 August 2013 ZigBee Light Link User Guide 2 NXP Laboratories UK 2013 JN-UG-3091 v1.1 ZigBee Light Link User Guide Contents About this Manual 9 Organisation Conventions Acronyms and Abbreviations Related Documents

f3sj Test Rod

Abstract: F3SP-B1P humidity sensor philips H1 OMRON plc programming console manual F39-JC3B-L F39-JC3B F39-JC3A g7sa wiring diagram LX 1792 A1627
Contextual Info: Short-range Safety Light Curtain Type 4 F3SN-A@SS Greater resistance to external light interference. Significantly less interference with other sensors. • Interference reduced both between Sensors of the same type and Sensors of different types. ■ Setting Console Optimizes Light Sensitivity for Specific

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.6±0.2 5.5±0.2 1.0 4.5±0.3 15.5±1.0 • High-power output, high-efficiency: Ie = 6 mW/sr min. • Emitted light spectrum suited for silicon photodetectors

LNA2904L

Abstract: LN166
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 10 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LN184 Unit : mm M Di ain sc te on na tin nc ue e/ , , d , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)

GP2AP030A00F

Contextual Info: GP2AP030A00F GP2AP030A00F Proximity Sensor with Ambient Light Sensor •Description ■Agency approvals/Compliance GP2AP030A00F integrates a proximity sensor and an ambient light sensor in one package. So small package size, it is easy to mount on the equipment.

of Traffic signal

Abstract: ST-017 Pedestrian traffic lights opto InGan green 12mm traffic light system traffic lights project led lifespan Traffic Light Control Circuit pcb circuit st017 SMT TRANSISTOR 5D
Contextual Info: Application notes for traffic signals A mong the versatile applications of Light Emitting Diodes LED the industries demand for utilizing these light sources for traffic technology pointed out a new application area. Traffic management technology has experienced a

Contextual Info: GP2AP002S00F GP2AP002S00F Proximity Sensor •Description ■Agency approvals/Compliance GP2AP002S00F provide a digital detection system integrated into one package the light emitting element and a light receiving element. So small package size, it is easy to mount on the

GP2AP002S30F

Contextual Info: GP2AP002S30F GP2AP002S30F Proximity Sensor •Description ■Agency approvals/Compliance GP2AP002S30F provide a digital detection system integrated into one package the light emitting element and a light receiving element. So small package size, it is easy to mount on the

Contextual Info: Transmissive Photosensors Photo lnterrupters CNA1012K (ON1114) Photo lnterrupter Unit: mm For contactless SW, object detection • Overview CNA1012K is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and

SMLE12WBC7W1

Abstract: TSZ22111-04 TSZ2211104 TSZ22111
Contextual Info: TYPE PRODUCTS Surface Mount Chip LED PAGE ／ SMLE12WBC7W 1. CONSTRUCTION White surface mount LEDs featuring InGaN on SiC and phosphor technology. 2. USAGE Light Source for display and back light unit. 3. DIMENSIONS See Figure.1 4. ABSOLUTE MAXIMUM RATINGS

ic iR light control

Contextual Info: Transmissive Photosensors Photo lnterrupters CNA1006N Photo lnterrupter Unit: mm CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the

an7060

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2802L (LN68) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea

transistor A1046

Abstract: A1046 k a1046 a1746 A1046 transistor F39-MLG2134 F39-MLG F39-MLG0610 automatic change over switch circuit diagram F39-MLG1219
Contextual Info: Safety Light Curtain for Long Distance Detection F3SL 20-m long-distance detection. Safety light curtain Type 4 is ideal for detection of intrusion of human bodies in large machines and conveyor lines. • Complies with IEC standards, EN standards, and North American

Contextual Info: Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode For optical control systems 1.7 Unit: mm Parameter Reverse voltage Forward current Pulse forward current * Symbol Rating Unit VR 3 V IF 100 mA IFP 1 A Power dissipation PD 190 mW

Contextual Info: Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 4.2±0.3 4.5±0.3 φ3.5±0.2 1.8 Not soldered 0.98±0.2 2-0.45±0.15 2-0.45±0.15 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol (2.54)

Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%

3RG7847-4BB

Abstract: 3RG7847-4BF 3RG7848-0CL 3RG7848-4BB 3zx1012 3RG7848-0AC 3RG7842-6SE 3RG7848-0FP 3ZX1012-0RG78-3BS1 3RG78
Contextual Info: SIGUARD Light Curtain and Light Grid 3RG7842 Instruction Manual Order No.: 3ZX1012-0RG78-3BS1 GWA 4NEB 839 6047-12 604000 WARNING SIGUARD photo-electric safety systems are intended to protect operators working at or near dangerous machinery. They can only perform this function if