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Sharp Microelectronics of the Americas


Sharp Microelectronics of the Americas LH5117N-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	LH5117N-10		420			1 - 10 - 100 - 1000 - 10000 -	Get Quote

LH5117N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LH5160N Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55 Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55	PDF
lh5117 Abstract: DIP24-P-600 Contextual Info: LH5117 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) The chip select input provides high speed access in	OCR Scan	LH5117 LH5117H: 24-pin, 600-mil 300-mil 450-mil 24-PIN DIP24-P-600	PDF
LH5911 Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.	OCR Scan	LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl	PDF
lh5117 Abstract: 5117 RAM Contextual Info: LH5117 CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 100 ns (MAX.) • Power consumption:	OCR Scan	LH5117 LH5117H: 24-pin, 600-mil 300-mil 450-mil LH5117 24-PIN 5117 RAM	PDF
LH5117 Abstract: 51171 LH5117N Contextual Info: LH5117 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 jiW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5117 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process	OCR Scan	LH5117 LH5117 24-PIN 24-pin, 600-mil DIP24-P-600) 300-mil 51171 LH5117N	PDF