LF SMD TRANSISTOR Search Results

FK 244 13 D2 PAK

Contextual Info: Heatsinks for D PAK and others copper heatsinks with excellent heat conductivity direct mounting on printed circuit through solderable surface especially suitable for SMD components of type D PAK TO 25 2 , D2 PAK (TO 26 3), D3 PAK (TO 26 8), SOT 669 LF PAK,

Contextual Info: A Heatsinks for D PAK and others B C D – copper heatsinks with excellent heat conductivity – direct mounting on printed circuit through solderable surface – especially suitable for SMD components of type D PAK TO 252 , D² PAK (TO 263), D³ PAK (TO 268), SOT 669 LF PAK,

Contextual Info: TD13004D • TD13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor • Very short switching times Features Very low switching losses • Very low dynamic saturation • Very low operating temperature • High reverse voltage • •

DSAIH0002562

Contextual Info: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

BKC Semiconductors

Contextual Info: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

BKC Semiconductors

Abstract: LR1 transistor smd transistor LR
Contextual Info: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

11733

Abstract: BKC Semiconductors DSAIH0002562 transistor 117-33
Contextual Info: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

s7d smd

Abstract: SMD s7d BKC Semiconductors DSAIH0002561
Contextual Info: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

transistor SMD Lf

Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Contextual Info: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

DSAIH00025320

Contextual Info: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

DSAIH0002562

Contextual Info: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

IP4223CZ6

Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
Contextual Info: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our

4894B

Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
Contextual Info: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring

display lcd 2x16

Abstract: smd transistor rc4 file smd transistor code rc4 LCM-S01602DTR 16x2 instruction set AMHRRQ3-433 transmitter 433.92 MHz 433 mhz UHF RECEIVER, pcb layout and Schematic CC1206JR smd transistor rc4 434 MHz RFID schottky
Contextual Info: MCP2030 Bidirectional Communication Demo Kit User’s Guide 2006 Microchip Technology Inc. DS51637A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

smd transistor LR

Abstract: smd transistor 3U DSAIH0002561
Contextual Info: SMD SOT-23 Plastic Switching Diode Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,

smd transistor marking DK RH

Abstract: smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • D ual Marked w ith D evice Part Num ber and DESC

CFY19-22

Abstract: CFY19 Dual-Gate* bf981 bf987
Contextual Info: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '

smd transistor marking dj

Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

atmel 0720

Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
Contextual Info: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .

Diode SMD ED 9C

Abstract: transistor smd marking Kd LA 5530
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. F ea tu r es • D ual M arked w ith D ev ice

thermistor 100k

Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Contextual Info: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,

smd transistor marking 7j

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
Contextual Info: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current

TRANSISTOR SMD MARKING CODE 7B 6 pin

Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
Contextual Info: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated