LT308-S7
Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Contextual Info: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度
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308-s794-v0lt308-s7lem lt 308 s7+5lem lt 300 - tlem lt 300lem lt 308lem lt 2000lt308-s
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LEM LT 308
Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
Contextual Info: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的,用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环(补偿)电流传感
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308-t794-v0lt308-t7lem lt 308+3lem lt 300lem lt 500t7 308
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Lem LT 300
Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
Contextual Info: 电流传感器 LT 308-S6 原边和副边之间是绝缘的,用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流, 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度
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308-s694-v0lt308-s6lem lt 300+2lem lt 308lt308-s
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ssi 202
Abstract: HER301 HER308 Z03E
Contextual Info: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability
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her301-her308157pfmil-std-202+3ssi 202her308z03e
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laf 0001
Abstract: SI 6822 intel 8049 intel 8059 S1 6822 jc-115 intel 8049 microcomputer MCS-48 intel AP-49 TLE 7233
Contextual Info: 1 AP-49 INTRODUCTION T h e Intel M C S -48 fa m ily o f m ic ro c o m p u te rs m arked th e firs t tim e an e ig h t bit c o m p u te r w ith program s torage, d a ta sto rag e, and I/O fa c ilitie s w as ava ila b le on a s in g le LSI chip. T h e p erfo rm an ce o f th e initial
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ap-49mcs-48laf 0001si 6822+7intel 8049intel 8059s1 6822jc-115intel 8049 microcomputerintel ap-49tle 7233
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TGL 29331
Abstract: Kombinat VEB Elektronische Bauelemente TGL 31428 bauelemente Kombinat bauelemente DDR TGL-31428 21-1 TGL 24815 TGL 24687 TGL 24815 veb taschenbuch
Contextual Info: Kontakt bauelemente Kombinat VEB Elektronische Bauelemente K O N T A K T B A UELEM ENTE In h alt S te c k v e rb in d e r, fla che B a u fo rm Seite 6 H F -R u n d ste ckve rb in d e r 61 N F -R u n d ste ckve rb in d e r 101 L ic h tle ite rs te c k v e rb in d e r
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tgl 29331kombinat veb elektronische bauelementetgl 31428bauelemente kombinat+6bauelemente ddrtgl-3142821-1 tgl 24815tgl 24687tgl 24815veb taschenbuch
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KD502
Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71
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1rf820
Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A
Contextual Info: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign
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an707si9120j40401tc1rf820+42n7000lem lt 308n-channel depletion-mode mosfet high voltages2000a
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44795
Abstract: sd 13005
Contextual Info: HTG2AXX HOLTEK r r uC Voice with 1024-Pixel LCD Features 8-bit microcontroller • • • • • • • O p e ra tin g voltage: 2.4V~5.2V 8 K x l6 p ro g ram ROM 208x8 d a ta RAM 16/24 b id ire ctio n a l I/O lines 16-bit p ro g ram m ab le tim e r counter
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MP21E
Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR
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mp21esowjetische transistorenmp21dudssr+6kt904asz16kt315oc1072transistoren ddrasz1015
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VEB mikroelektronik
Abstract: 4565 D A2005V KP303 KP303D U806D analoge schaltkreise a4100d A209K sf126d
Contextual Info: DATEN BUCH 0 /x *«» Der vorliegende T ite l ist ein w eite re r Band d er D aten buch-R eihe Uber die M ikroelektronik. B auelem ente Die A pplikationszentrum R eihe wird Elektronik des im Berlin VEB Kom binat A uftrag des und des VEB M ilitär verlages herausgegeben.
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veb mikroelektronik4565 da2005vkp303+6kp303du806danaloge schaltkreisea4100da209ksf126d
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ipc-16a
Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
Contextual Info: user benefits PACE features • Simplified pro gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe
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ipc-16a/520d16-bit10-word40-pin+14latches440498737-5000/twx1371/telex77ss32ipc-16ads3608stk 808c47sipc 16alifo stack 256 word 8 bitscansux1009stk power amplifiersjc-14stk amplifiers
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JD 1803
Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Contextual Info: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL
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jd 1803philips diode ph 33dschematics bosch al 1450 dvbosch al 1450 dv+6jd 1803 52bjd 1803 icjd 1803 data sheetquartz kds 9jshockley diode applicationyokogawa yf 104
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CR250J
Abstract: CR250J24 CR250J-8 CR150DM CR150DM-10 CR150DM-12 CR150DM-24 CR150DM-32 CR150DM-36 CR150DM-4
Contextual Info: - 50 - m ss « CR150 DM— 10 CR150 DM— 12 CR150 DM— 16 CR150DM-20 CR150 DM— 2 4 CRI 50DM—? CR ì 50 DM— 3 2 CRI 50 DM— 3 6 CR150 DM— 4 CR150DM-6 CR150DM-8 CR250DP-4 CR250DP-6 CR250DP-8 CR250J-10 CR2 50 J— 12 CR250J— 16 CR2 50 J— 20 CR250J-24
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TSS2J2A44S
Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
Contextual Info: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate
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SN7401
Abstract: sn29601 SN7449 SN74298 SN74265 MC3021 SN54367 sn74142 signetics 8223 9370c
Contextual Info: INDEX PAGE TTL Integrated Circuits Mechanical Data 1 TTL Interchangeability Guide 6 Functional Selection Guide 19 Explanation of Function Tables 38 54/74 Families of Compatible TTL Circuits 40 TTL INTEGRATED CIRCUITS MECHANICAL DATA J ceramic dual-in-line package
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IBM "embedded dram"
Abstract: oki cross MG65P 35x35 bga
Contextual Info: Oki Semiconductor MG63P/64P/65P_ 0.25|im Embedded DRAM/Customer Structured Arrays D ES C R IP TIO N O ki's 0.25 uni M G 6 3 P /6 4 P /6 5 P A pplication-Specific Integrated Circuit ASIC provides the ability to em bed large blocks of Synchronous DRAM (SDRAM ) into an em bedded array architecture called the
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mg63p/64p/65p_mg63p/64p/65ppropb14mg6xpb16+9mg6xpb18mg6xpb20mg6xpb22mg6xpb24mg6xpb26ibm "embedded dramoki crossmg65p35x35 bga
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Contextual Info: IN TE G R A TE D CIRCUITS [nlEET TZA1000 QIC read-write amplifier 1998 M ar 17 P relim inary specification S upersedes data of 1998 Mar 11 File under Integrated C ircuits, IC01 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
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3 pin preset resistor 10k
Abstract: LA2600 LC7500 50k preset diagram LC7600 mos 3021 preset resistor 568C LC750 preset resistor 10k
Contextual Info: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic
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f-74-05-01lc7500la2600dip30s+130dd77l3t-90-20dip-24slimdip28snqip48b3 pin preset resistor 10k50k preset diagramlc7600mos 3021preset resistor568clc750preset resistor 10k
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LEM LT 200-S
Abstract: 7174K LEM LT 308 S7 LC7600
Contextual Info: SANYO SEMICONDUCTOR CORP 3SE D Ea 7 eH 7 Q 7 b 0G0Û032 1 EI A f -7 4 -0 5 -0 1 C M O S LS I Electronic Volum e Controller 568C A p p lic a tio n s • A n e le c tr o n ic v o lu m e con trol sy s te m is com p osed by u s in g th e L C 7500 in con ju n ction w ith th e e le c tr o n ic
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TA2036N
Abstract: ScansU9X26 Scans-031 rs tube in3020b TIL 815 S3 TRIO 3D cep 6060 r
Contextual Info: DU MONT INDUSTRIAL CATHODE-RAY TUBES S econ d E dition IN D U S T R IA L T U B E SA LES D E P A R T M E N T ALLEN B. D U MONT LABORATORIES, INC. PA SSA IC N E W JE R S E Y C o p y rig h t 1956 Industrial T u b e Sales D epartm ent A L L E N B. D U M O N T L A B O R A T O R IE S, INC.
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80-182ata2036nscansu9x26scans-031+5rs tubein3020btil 815s3 trio 3dcep 6060 r
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mb86904
Abstract: microsparc SUN MICROELECTRONICS CPGA321 MB8690 STP1012PGA STP1012PGA-85 SPARC v8 architecture BLOCK DIAGRAM sparc v8 STP1012PGA-110
Contextual Info: STP1012 S un M icro electro nics J u ly 1 9 9 7 microSPARC -ll DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface D e s c r ip t io n T h e m icroSP A R C -II 32-b it m icro p ro cesso r is a h ig h ly integrated , h ig h -p erfo rm an ce m icroprocessor. Im p le
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32-bitstp1012stp1012pga-70astp1012pga-85+9stp1012pga-110mb86904microsparcsun microelectronicscpga321mb8690stp1012pgasparc v8 architecture block diagramsparc v8
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HD647180
Abstract: HD647180X0 hitachi hd64180 hitachi hd64 series HD641180X0 HD64180X HD641180 647180X HD647180X HD643180
Contextual Info: TH E 64180 FAM ILY HITACHI le n irli: : tri u • i-', 'i.-. ■ *i; : r, . . INDEX HD64180 FAMILY HIGH- INTEGRATION CMOS MICROCONTROLLERS Page HD64180 — Experience Innovation with 2 HD64180 — A System on a Chip 4 The HD64180R1 and HD64180Z 4 ZTAT — Expanding Performance 6
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hd64180hd64180r1hd64180zhd64180s+11dp-64shd647180hd647180x0hitachi hd64180hitachi hd64 serieshd641180x0hd64180xhd641180647180xhd647180xhd643180
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Contextual Info: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new
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