LEM LT 100 P Search Results

lem lt 2000

Abstract: M66244FP
Contextual Info: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

Contextual Info: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current

lem current lt 100

Abstract: LEM Components
Contextual Info: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

Contextual Info: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

lem lt 100 p

Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem current lt 100

Abstract: lem lt 100 LEM LT 200-S Lem LT 200 Hall Effect Current Measurements 10000-S
Contextual Info: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

lem current lt 100

Abstract: lem current lt 2005-s lem lt 2000 LEM LT 2005-s LEM Components SMPS IC 2005
Contextual Info: Current Transducer LT 2005-S IPN = 2000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

lem current lt 100

Abstract: LEM Components
Contextual Info: Current Transducer LT 4000-S IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LEM Components

Contextual Info: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LEM Components

Abstract: 1005-S Lem LT 1000
Contextual Info: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

Contextual Info: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current

LT 505-S

Abstract: LEM LT 505-s LEM Components TR 505 LT 405
Contextual Info: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

2322 m

Abstract: Lem LT 300 - t lem lt 100 p
Contextual Info: M odel PP- 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element Cermet Element Electrical Resistance Range Linear 220 i i to 2.2 M il 220 i l to 2.2 M i N on Linear 2.2 KJ1 to 470 K ii N ot Applicable Resistance Tolerance ± 20% Standard

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

Contextual Info: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d’usines ne peuvent être inférieures aux unités d ’emballage

ssi 202

Abstract: HER301 HER308 Z03E
Contextual Info: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability

Contextual Info: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. 51 lumberg The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d ’usines ne peuvent être inférieures aux unités d ’emballage

SM5808

Abstract: tsx micro
Contextual Info: rupe SMS SOS 8 x 8 bit Multipliei— Accumulator NIPPON PRECISION CIRCUITS LTD. • General Th e SM5808 i s a h ig h s p e e d 8 x 8 b i t p a r a l l e l m u lt i p i i e r - a c c u m u l a t o r w h ic h o p e r a t e s a t 4 5 n S c y c l e t im e 22MHz m u l t i p i y - a c c u m u l a t e r a t e .

draloric Potentiometer

Abstract: vishay draloric Potentiometer
Contextual Info: Trimmwiderstand, wasserdicht E 13. 63. bOE m Trimm potentiometer, waterproof Keramik/Cermet Ceramic/Cermet Keramik/Kohle Ceramic/Carbon «IDDnMb 0QGD133 Elektrische Oaten ßS7 VISHAY/DRALORIC Electrical data Typ Style E13KS E13C S W id e rs tan d s s ch ic h t

2N6218

Abstract: 2N6115 2N6114 GES621I Voltaire unijunction
Contextual Info: Silicon Complementary Unijunction Transistor 2 N 6 2 1 8 -2 4 SEE G ES621I*2 COMPLEMENTARY UNIJUNCTION T he G eneral E le c tr ic C om p lem en tary U n iju n ctio n T ra n sisto r is a silicon planar, m on olith ic in teg ra ted circu it. It h as u n iju n ction c h a r a c te r istic s w ith

T2515

Abstract: T17N
Contextual Info: EUPEC SSE D 3M032T7 0000LS3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties H ochstzulässige W erte V d rm , V r r m 400 60 0 900 800 1000 1100 1200 M axim um perm issible values P eriodische V orw ärts- und

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of