LEM LA 50P Search Results

lem la 50p

Contextual Info: A COMPANY MODELS RT24 and RTR24 W irewound Trim m ers OF TECHNO M ilitary, M IL-R-27208 Q ualified, Type RT Established Reliability, M IL-R-39015 Q ualified, Type RTR FEATURES • Precious metal wiper • 1 . 0 watt to 85°C • TCR ± 50PPM/°C • Solderable leads

lem lta 50p

Abstract: lem lta 100p str f 6655 lem la 100p Vishay Sprague axial lem la 50p
Contextual Info: MODEL ROX Metal Oxide Resistors Special Purpose, High Voltage FEATURES • • • • • L o w T C : + 20 0P P M /°C stan dard . + 100PPM /°C , + 5 0 P P M /°C available. T o le ra n ce s: + 1%, + 2% , + 5 % , + 10% For oil bath o r open air opera tion

analog dim ballast

Contextual Info: MICRO L I NE AR % M bO ^ a mf l 0 0 0 2 7 ^ 3 3Sb • fILN SIE » i c r o "T:S%-U-3l USICs L in e a r FB3680 Electronic Ballast and Power Factor Tile Array GENERAL D ESCRIPTIO N FEATURES The FB3680 is an a p p lic a tio n focused tile array o p tim iz e d

Contextual Info: M ulti-Contact 4. K lem m priifspitzen 1000 V /6 kV Test Clips 1000 V /6 kV G ripp e-fils 1000 V /6 kV K P S 7 /4 -S KPS 7/4-S KPS 7/4 -S * Bestellnr. 24.0222 Lieferbare Farben. —1, —4 Order No. 24.0222 A vailable colours: —1, - 4 N o d e Cde 24,0222

NM 4049b

Contextual Info: 9 P RE CA U T I ON S IN DESI GNI NG CIRCUI TS 9 -1 Input Processing 1 P ro c e ss in g of u n n e c e ssa ry gate In p u ts of CMOS IC have such a h ig h im p ed an ce th a t the logical level becom es undefin ed u n d er open co n d itio n s. In th is case, if in p u t is at an in te rm e d ia te level, the tr a n s is to r s of both P - c h a n n e l and

Contextual Info: * PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .021 S Q . 9 [.5 3 ] L J DIMENSION MAY BE EXCEEDED WITH SOLDER ONLY .1 0 0 /1 3 0 * [2 .5 4 /3 .3 0 ] . 5 5 0 MAX. [1 3 .9 7 ] n m i 001 . 5 5 0 MAX. [1 3 .9 7 ] T— 1— 1 f LJ 10 in CO DOT LOCATES TERM.

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL Sn63% , RoHS L E A D P b -F R E E No No P b 37 % S n 9 6 % , Ag4% LF1 Yes Yes * PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .0 2 1 S Q .(9 ) [.5 3 ] L J w DIMENSION MAY BE EXCEEDED WITH .1 0 0 /1 3 0 * _ [2 .5 4 /3 .3 0 ]

VH1011

Contextual Info: OSCILLATORS SONET CRYSTAL OSCILLATORS n u iR n ta fiuw m iar ¿a R ecfrcnict TV2363-1 12.7 m ax. 1.25 m ax. t_ _ 6.35 J T d ^ 0 .46 ± .076 — 2 4 P ic s S ta n d o ffs — 4 P ic s 2 2.8 6 m ax. 15.24 R e f O n ly — 4 P ic s PIN 1 FUNCTION VC Control Volt.

9853a

Abstract: RE37C Diplexer 595 BC 0712
Contextual Info: ANALOG DEVICES Programmable Digital QPSK/16-QAM Modulator AD9853 FEATURES Universal Low Cost Solution for HFC N etw ork Return-Channel T x Function: 5 M H z-4 2 M H z/ 5 M H z-65 MHz 165 MHz Internal Reference Clock Capability Includes Programmable Pulse-Shaping FIR Filters and

IM6100-IDL

Abstract: 7530-1 7570 pci IM6100-1IPL PC 10TB DX10 IM6100 IM6101 IM6102 IM6103
Contextual Info: IM 6100 CMOS 12 B it M icroprocessor n M ü fm GENERAL DESCRIPTION FEATURES T h e IM 6 1 0 0 is a fixed w o rd leng th, sing le w o rd instruction, p arallel tran sfer m icro processor using 1 2 -b it, tw o's c o m p le ­ m ent a rith m etic w h ich recog nizes th e in struction set of

SMD TRANSISTOR 6Cs

Abstract: smd 6CS 4194D KH 6004 pin diagram RM4194 smd transistor 9j ha 11706 RC4194N 2N914 6Cs smd
Contextual Info: Raytheon Electronics Semiconductor Division ANALOG RC4194 Dual Tracking Voltage Regulators Features • S im u ltan e o u sly ad ju stab le o u tp u ts w ith one resisto r to ± 42V • L oad c u rre n t - ± 2 0 0 m A w ith 0 .0 4 % load reg u latio n • In tern al th erm al shutdow n a t T j = + 175°C

TGS203

Abstract: Figaro TGS203 FIGARO ke 25 LV1011 FIC-5401 carbon monoxide ir sensor TGS 832 TCS2113 TGS 832 sensor acetone gas sensor
Contextual Info: TECHNICAL INFO RM ATIO N FOR TGS203 Technical in fo rm atio n for C arbon M o n o xid e Sensors T h c n u i k c t l n g o f T C S2D3 iia rL o d in s o m Leon d u cU v e ty pc c a rb o n m o m v ìd o s c u s a r foaLur¡n g It ig li S L 'k'clii'ily a n d s ta b ility .

Contextual Info: TOSHIBA TC7S04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT T• f 7 S M ^ur ■F ■ m wêêf SILICON MONOLITHIC TT7<;fM FII v g m m INVERTER The TC7S04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent

Contextual Info: TOSHIBA TC7S02F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TT7 < ;n 3 F m • wêêf T T 7 < ;n ? F IJ m g ^ ur SILICON MONOLITHIC m ^m m v ^ ur 2-INPUT NOR GATE The TC7S02 is a high speed C2MOS 2-INPUT NOR GATE fabricated with silicon gate C^MOS technology.

LCA10075

Abstract: LMA9000 lca10129 LCA10000 LCA10051
Contextual Info: NOV 0 5 LSI LOGIC 19M LCA10000 Compacted Array Series Description The LCA10000 Com pacted A rra y se rie s is an HCMOS sem icustom te c h n o lo g y o ffe rin g speed pe rfo rm a n ce e q u iv a le n t to 10K ECL, com bined w ith ve ry high gate counts. The LCA10000

Contextual Info: TOSHIBA TC7S00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TT7<;nnF Tr7<;nnFii • m m g wêêf ^ u r m m v 2-INPUT NAND GATE The TC7S00 is a high speed C2MOS 2-INPUT NAND GATE fabricated with silicon gate C^MOS technology. It achieves high speed operation similar to equivalent

exponential Voltage-to-Frequency Converter

Abstract: Voltage-to-Frequency Interconnect AD595 AD595 thermocouple AD594 AN-348 SILVER MICA capacitor Marsh Electronics
Contextual Info: ANALOG ► DEVICES AN-348 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Avoiding Passive-Component Pitfalls The Wrong Passive Component Can Derail Even the Best Op Amp or Data Converter Here Are Some Basic Traps to Watch for

Contextual Info: AT22V10B Features • High Performance Programmable Logic Device 7.5 ns Max Propagation Delay Up to 166 MHz Operation 5 V ± 10% Operation Fully Compatible with Standard 22V10 Identical Functionality/Fuse-Map TTL Compatible Inputs and Outputs 10 nA Leakage Maximum

philips ceramic capacitors

Abstract: ic 358s T500K99COGW8570 358S 859S-100Z Philips ceramic Miniature Ceramic Plate Capacitors philips n3300 PA06-A "3.58S"
Contextual Info: Ceramic Capacitors Miniature Plate Capacitors, Class 1 100V Rated OC voltage U* Twbb. Coefficient TCU9*/KI Cap. IdF PtOO +100 0.47 0.56 0.68 0.82 1.0 1.2 1.5 1.8 2.2 2.7 33 39 4.7 5.6 6.8 8.2 10 12 15 18 22 Z1 33 39 47 56 68 82 100 120 150 188 220 270 330

MSM5842

Abstract: MSM58422 58422 4 pin flat lem la 20 pb 1536X8 pflt5
Contextual Info: OKI semiconductor MSM58422_ CMOS 4-BIT SINGLE CHIP MICROCONTROLLER WITH FLT DRIVER GENERAL DESCRIPTION OKI’s M SM 58422 is a low-power, high-performance 4-bit single-chip microcontroller imple­ mented in complementary metal oxide sem iconductor technology.

92c392

Abstract: NCR SCSI 92C391 MAX32550
Contextual Info: N i l e Ir e » NCR92C392 IEEE 802.3 10BASE2 Transceiver SYSTEM DESCRIPTION FEATURES • S u p p o rts th e I E E E 802.3 sta n d a rd lo r 10B A SE2 ■ D esigned to re d u c e ex tern al c ir c u itr ■ In te g ra te s all tran sceiv er fu n c tio n s ev cept signal

Contextual Info: P54/74PCT398/A/B, P54/74PCT399/A/B FAST QUAD DUAL-PORT REGISTER FEELOMDMÄrnf FEATURES • Full CMOS Implementation Fully TTL Compatible Input and Output Levels ■ Low Power Operation Produced with PACE Technology ■ Iql = 48 mA commercial and 32mA (military)

HC-106

Abstract: hc106 HC-105 HC-96
Contextual Info: 9 PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Procusing 1 P ro cessin g of u n u se d gate In p u ts o f CMOS IC have s u c h a high im p ed an ce th a t th e logic level beco m es u n d efin ed u n d e r o p e n conditions. If th e in p u t is a t a n in te rm e d ia te level, th e P-channel an d N -ch an n el tra n sisto rs b o th tu rn on, a n d excessive su p p ly c u rre n t flows.

TDC1010

Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
Contextual Info: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology