LEJ A6 Search Results

wc8j

Abstract: A67A
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A67A

Contextual Info: :8/.08,/ =;>;3CDA7 :;9: @?F7A A7<3G 8LIWXULV X kgu JN@K:?@E> :8G89@C@KP z@C< ,Feqyhjklhn X kB4 ;@<C<:KI@: JKI<E>K? a9<KN<<E :F@C 8E; :FEK8:KJb X |<8MP CF8; LG KF ncigg4u E 6 7 X .wv :F@C K<ID@E8CJc @;<8C =FI ?<8MP ;LKP CF8; z@C< ,Feqkggillho X 3E<E:CFJ<;c 58J? K@>?K 8E; ;LJK GIFK<:K<; KPG<J 8M8@C89C<

Contextual Info: :8/.08,/ =;>;3CDA7 :;9: @?F7A A7<3G 8LIWXULV X X X X X X X X z@C< ,Feqyhjklhn E 6 7 z@C< ,Feqkggillho axw KPG<b z@C< ,Feqw/wgpggigjhiipaxw KPG<b 5?;< 5?>C35C 63C3 wFEK8:K 8II8E><D<EK wFEK8:K I<J@JK8E:< hu hv hw a,-b lgD hw a,wb xw KPG<q uGGIFOe pggD5r uw KPG<q uGGIFOe i4u

NCC KM

Contextual Info: :8/.08,/ =;>;3CDA7 :;9: @?F7A A7<3G 8LIWXULV X X X X X X X X z@C< ,Feqyhjklhn E 6 7 z@C< ,Feqkggillho axw KPG<b z@C< ,Feqw/wgpggigjhiipaxw KPG<b 5?;< 5?>C35C 63C3 wFEK8:K 8II8E><D<EK wFEK8:K I<J@JK8E:< hu hv hw a,-b lgD hw a,wb xw KPG<q uGGIFOe pggD5r uw KPG<q uGGIFOe i4u

N1055

Abstract: EE-16-1 EE-160
Contextual Info: Panasonic *v*JI/BWtSP:'5íV9 Tantalum Solid Electrolytic Capacitors/TE ? "J S eries: T ype: V x V t f TE T Japan Surface Mount Type Tantalum Solid Electrolytic Capacitors mmm Surface mount type f t F e a tu re s f t • 7a - y C o m p a c t size a n d w id e c a p a c ita n c e ra n g e

SN74ALVCH16835

Contextual Info: SN74ALVCH16835 18-BIT UNIVERSAL BUS DRIVER WITH 3-STATE OUTPUTS S CES053 - SEPTEMBER 1995 • Member of the Texas Instruments Wldebus Family • EPIC ™ Enhanced-Performance Implanted CMOS Submicron Process • Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown

74hct34

Abstract: B694 ij98 MM54HCT34 MM74HCT34
Contextual Info: January 1988 Semiconductor MM54HCT34/MM74HCT34 Non-Inverter General Description Features The M M 54H C T34/74H C T34 are logic fu n ctio ns fabricated by using advanced silicon-gate CM OS te ch n olo gy w hich provides th e inherent b enefits o f C M OS - low quiescent

LEJ A6 DIODE

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Low-Voltage CMOS Octal Registered Transceiver With Dual Output and Clock Enables MC74LCX2952 LCX With 5V-Tolerant Inputs and Outputs 3-S tate, Non-Inverting LOW-VOLTAGE CMOS OCTAL REGISTERED TRANSCEIVER

Contextual Info: W24257AJ-8N ¡’inbond = 7 Electronics Corp. smt:7 32K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high

HV Diode HDB 7.5

Abstract: A21V
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M C 74L V X 4245 LVX Dual Supply O c tal T ra n slatin g T ra n sc e ive r with 3-State Outputs The 74LVX4245 is a 24-pin dual-supply, octal translating transceiver that is designed to interface between a 5V bus and a 3V bus in a mixed

54ACT11853

Abstract: 74ACT11853 D3474
Contextual Info: 54ACT11853, 74ACT11853 8-BIT TO 9-BIT PARITY BUS TRANSCEIVERS D3474, MARCH 1990-REV1SED OCTOBER 1990 54ACT11853 . . . JT PACKAGE 74ACT11853 . . . OW OB NT PACKAGE TOP VIEW High-Speed Bus Transceivers With Parity Generator/Checker Parity-Error-Flag Open-Drain Output

Contextual Info: R C H II_ D EM IC O N D U C TQ R r GTLP8T306 8-Bit LVTTL-to-GTLP Bus Transceivers General Description Features The GTLP8T306 is an 8-bit bus transceiver that provides LVTTLto GTLP signal level translation. The device provides a high speed interface between cards operating at LVTTL

marking code t1a

Abstract: ECST Panasonic marking t1c PANASONIC ce Series 686r ECST1 panasonic ge series capacitors
Contextual Info: Tantalum Electrolytic Capacitors Surface Mount Type TE Series Features • For general purpose surface mount type • Compact size & wide CV range • High solderability & stable characteristics for soldering Specifications Item P erform ance C haracteristics

82LS16

Abstract: 82LS17 N82LS16F N82LS17F S82LS16F S82LS17F 20Z3
Contextual Info: JANUARY 1983 BIPOLAR M EM O R Y DIVISION 256-BIT BIPOLAR RAM 2 5 6 x 1 DESCRIPTION T h e 82LS16 a n d 82LS17 a re R e a d /W rite m e m o ry a rra y s w h ic h fe a tu re e ith e r o p e n c o lle c to r o r 3 -s ta te o u tp u t o p tio n s fo r o p ­

Contextual Info: 1997-1/21 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL _ 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are

Contextual Info: March 1996 54ABT/74ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs General Description The ’ABT245 contains eight non-inverting bidirectional buff­ ers with TRI-STATE outputs and is intended for bus-orient­ ed applications. Current sinking capability is 64 mA on both

4017BP

Abstract: 4013BP 4069BP 4016BP 4066bp hef 4011bp IC NAND 4040BP 4000BP 40106BP 4030BP
Contextual Info: Signetics Integrated Circuits - Loemos HEF 4000 Series LOCIMOS Locally Oxidised CMOS LOCM OS g e n e r a l d e s c r ip t io n LOCMOS is com ple tely pin, fu n c tio n and ty p e num ber com patible w ith th e 4 0 0 0 and 14000 fam ilies. Compared w ith o rd in a ry CMOS, LOCMOS c irc u it

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm TMC2246A Image Filter 11 x 1 0 bi t , 60 M H z Features Applications • • • • • • • • • • • • • 60 MHz computation rate 60 MHz data and coefficient input

TMC2330A

Abstract: Polar+76+EM
Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm TMC2330A Coordinate Transformer 1 6 x 1 6 Bi t , 50 M O P S Features Description • Rectangular-to-Polar or Polar-to-Rectangular conversion at guaranteed 50 MOPS pipelined throughput rate

TC58V64AFTI

Contextual Info: TOSHIBA TC58V64AFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

WLSD21

Abstract: WLCA32-41 K13A WLCA12 2a104 3A200 MARKING WL OMRON wl WL-6H4100 WL01HAL4
Contextual Info: Two-circuit Limit Switch WL Wide Selection of Two-circuit Limit Switches A wide selection of models are available, including the overtravel models with greater OT, lampequipped models for checking operation, low-temperature and heat-resistant models, and microload

TC58128FT

Abstract: TC58128FTI TOSHIBA cmos memory -NAND
Contextual Info: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.

99198 VP

Abstract: SU03 R4096 l0642 LCD TV M 3211 SiI 0649 2SC1622A IC-6141 LIHFC Cmos 74 HC
Contextual Info: MOS 7 s4 M O S Digital Integrated Circuit juPD 6653P3 CM OS L S I vi. ^ L S I li, fiPD 6 6 5 3 P3 i, 1 1 -2» *] U * ^ u - ? f-f 32.768 kHz £ tìèÌIÈ t L T r^ B # l t j , r 8tfT^ 'J ^ f 1v CMOS L S I T 't , r Daily/Weekly T 7 - A j r 7 o / ^ 7 7 U i t

TH58V128FT

Contextual Info: T O S H IB A TH58V128FT TENTATIVE TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 128 M b it 16 M X 8 bit C M O S N A N D E2PR O M DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 32 pages X 1024 blocks.