LED23FC Search Results
LED23FC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LED23FC-TEC-PRContextual Info: LED23FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-TEC-PR LED23FC-TEC-PR 670x770 150-200mA | |
LED23FCContextual Info: LED23FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC LED23FC 670x770 150-200mA | |
LED23FC-TECContextual Info: LED23FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-TEC LED23FC-TEC 670x770 150-200mA | |
LED23FC-SMD5Contextual Info: LED23FC-SMD5 v 1.1 6.11.2013 Description LED23FC-SMD5 is fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This surface mount Mid-IR LED provides a typical peak wavelength of 2.35 µm and optical power of typ. 1 mW qCW. It comes in low temperature co-fired ceramic SMD |
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LED23FC-SMD5 LED23FC-SMD5 150mA 200mA | |
LED23FC-PR-WINContextual Info: LED23FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-PR-WIN LED23FC-PR-WIN 670x770 150-200mA | |
LED23FC-PRContextual Info: LED23FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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LED23FC-PR LED23FC-PR 670x770 150-200mA | |
Product lineContextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact |
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LED18 LED19 LED20 LED21 LED22 LED23 LED29 LED34 LED35 LED36 Product line | |
smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
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RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI |