LED1 Search Results

Contextual Info: LED1 D2 D1 LED1 D2 6 C4 MX4- RJ-8 C3 MD4+ 9 8 D1 CH_GND MD4- MD3- MD3+ MD2- MD2+ 7 MX4+ RJ-7 4 MX2- RJ-6 C2 5 MX3- RJ-5 2 MX3+ RJ-4 VCC MD1- MD1+ 3 MX2+ RJ-3 MX1- RJ-2 MX1+ RJ-1 1 10 C5 SHIELD C1 D3 LED2 D4

KL2134

Abstract: KL2114
Contextual Info: Datasheet for KL2114 and KL2134, Version 1.1 Signal LED1 Signal LED2 Signal LED3 Signal LED4 Output 1 Output 2 +24 V Output 1 +24 V 0V Power contacts Output 4 Output 3 0V Output 3 1 5 2 6 3 7 4 8 Output 2 Output 4 2-wire Top view Contact assembly 3-wire Connection

KL2622

Contextual Info: KL2602/KL2622 2-Kanal Relais Ausgangsklemme 230V AC Konfigurationsanleitung Version 1.1 23.10.2006 Datenblatt für KL2602/KL2622, Version 1.1 Einführung KL2602/KL2622 13 14 Signal LED1 A B A1 1 C D Signal LED2 5 A2 A1 A2 + + Powerkontakte 120 V/ 230 V 2 6

KL1164

Abstract: KL1154 INPUT34
Contextual Info: Data sheet for KL1154 and KL1164, Version 1.0 Digital Input Signal LED1 Signal LED2 Signal LED3 Signal LED4 Input 1 Input 2 1 5 2 6 3 7 +24 V Power contact +24 V 0V Power contact 0 V positive negative Input 4 Input 3 4 8 2-wire Top view Contact assembly 3-wire

KL2134

Contextual Info: Datenblatt zu KL2114 und KL2134, Version 1.1 Signal-LED1 Signal-LED2 Signal-LED3 Signal-LED4 Ausgang 1 Ausgang 2 Ausgang 1 +24 V +24 V 0V Powerkontakte Ausgang 4 Ausgang 3 0V Ausgang 3 1 5 2 6 3 7 4 8 Ausgang 2 Ausgang 4 2-Leiter Draufsicht Kontaktbelegung

Contextual Info: 6 4 5 Rev Description AWO# - APPROVED: DATE:_ Date 12/08/10 RELEASED Appr TITLE: LED1 GREEN ' LED2 (GREEN) b b P " i pm g fe a te a bm b pm § .126 [3.20] MiBiinlimflMÎïiM -2.595 [65.91]- -1.920 [48.78]im E l uuguuguu * * * * * ♦ * * * * * * * * * *

KL2612

Contextual Info: KL2612 2-Channel 125 V AC Relay Output Terminal Configuration Instructions Version 1.1 2006-20-23 Datasheet for KL2612, Version 1.1 Introduction KL2612 13 14 Signal LED1 A B OUT 1 1 2 IN OUT Signal LED2 5 OUT 6 IN 5 6 2 3 C D 7 3 7 OUT PE PE power contact

Contextual Info: 6 Rev APPROVED: Description RELEASED A W 0# - Date 8/05/10 Appr TITLE: DATE:_ -.841 A A [2 1 .3 5 ]- X c: .531 [13.50] LJ GREEN / LED1 JL .138 [3 .5 0] \ YELLOW (LED2) 050 [1.27] -.100 [2.54] 60 [4.06] .120 13.05] 0.035 [0 .9 0 }— _ _ 4 ,4 2 3 [ 1 0 . 7 5 ] ^ ^ ° ^

KL2012

Abstract: KL2002 KL2032 KL2022
Contextual Info: Datenblatt zu KL2002, KL2012 und KL2022, Version 1.1 Signal-LED1 Signal-LED2 Ausgang 1 Ausgang 2 Ausgang 1 +24 V +24 V 0V 0V PE PE Powerkontakte 1 5 2 6 3 7 4 8 Ausgang 2 2-Leiter Draufsicht Kontaktbelegung 3-Leiter 4-Leiter Anschlusstechnik 2-Kanal-Digital-Ausgangsklemme 24 V DC

KL2012

Abstract: KL203
Contextual Info: Data sheet for KL2002, KL2012 and KL2022, Version 1.1 Signal LED1 Signal LED2 Output 1 Output 2 Output 1 +24 V +24 V 0V 0V PE PE Power contacts 1 5 2 6 3 7 4 8 Output 2 2-wire Top view Contact assembly 3-wire 4-wire Connection 2-channel digital output terminal 24 V DC

SG160160C

Contextual Info: SG160160C 160 DOTS X160 DOTS • FEATURES ■ MECHANICAL DATA ◆ NO BUILT-IN CONTROLLER ITEM DIMENSIONS UNIT ◆ 2.7〜5.5V POWER SUPPLY Module Size (W x H x T) 89.2 x 85.0 x 10.0(LED14.6) mm ◆ 1/160 DUTY CYCLE Viewing Area ( W x H ) 62.0 x 62.0 mm ◆ 8-BIT PARALLEL INTERFACE

LED1050-03

Abstract: IR LED infrared led infrared emitting diode led 1050-nm "1050 nm" led lead frame LED1050-03US
Contextual Info: LED1050-03 Infrared LED Lamp LED1050-03US is an GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 1050 nm †Specifications 1 Product No. Infrared LED Lamp Outer Dimension 2)type No.

1C12

Abstract: C4 diode c20 diode A8483
Contextual Info: 1 2 3 4 A A LED1 L2 LED2 LED3 D1 L1 LED4 SW U1 + JP1 2 1 1 C1 2 Vin FB EN R1 5 + JP2 EN GND 3 - B SW C2TP1 4 C20 - A8483 1 2 B R3 FB PWM Q1 C3 C4 R4 R2 R5 GND C4 can be replaced by R for pull down C C Title D Size D Number Revision A Date: File: 1 2 3 3/13/2006

Contextual Info: V1-2 8_ _ 7_ I NOTE: THIS DEVICE IS ROHS COMPLIANT. SYM A A DESCRIPTION “ CU ST O M ER 0.29 LED1 2.54±0.20 3.38±0.08 5.40±0.20 4 - 00.90 48 DO 80 O o oi -d - d - 80 O D O D O— o q o o.- o o- o o o o 0.0 0.0 —d -d ~

Contextual Info: D 1RFRD006 A 7 A 4 @ 1.27x7=8. 89 01.70 A ."OPTION" AFRE E5TAB-3P0715 " V • e 03.20 .00/ M 8.18 11.43 13.26 15.50 21.5 A A “ o p t io n " C LED1 n n l |i l IM H p n in + @- .27x 7 = 8 11.43 Schem atic: 1000PF/2KV SHIELD TXi/i Z O P HV\M TX+ RX 1:1 RX-

Contextual Info: R EV IS IO N RECORD A1RFRD10 REV -6 3 .8 - - OPTION LED 2^ \n ^OPTION) LED1 n INIB u i I m INI gj iiiiiiin n liny mi n ECD A DESCRIPTION DRAWING MODIFY DRFT CHKD YANGLAN 07/07/05 n llllllll llllllll uj iiiiyiiii n iiiiiiiiie Bi

C2P TRANSISTOR

Abstract: DS25 GRM188R60J475K MAX1576 MAX1576ETG NBCW011T NSCW215T LED1233 MAX1576Y
Contextual Info: KIT ATION EVALU E L B A AVAIL 19-3326; Rev 1; 8/05 480mA White LED 1x/1.5x/2x Charge Pump for Backlighting and Camera Flash Features The MAX1576 charge pump drives up to 8 white LEDs with regulated constant current for uniform intensity. The main group of LEDs LED1–LED4 can be driven

LED1300-35XX

Contextual Info: LED1300-35xx High Power InGaAsP NIR LED LED1300-35xx is an InGaAsP LED mounted on a metal stem and covered with epoxy resin or glass lens can. On forward bias it emits a spectral band of radiation, which peaks at 1300 nm. Absolute Maximum Ratings Item Symbol

Contextual Info: LED16FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED1050-66-60

Contextual Info: LED1050-66-60 TECHNICAL DATA High Power LED Array, 60 chips GaAs LED1050-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency GaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin.

Contextual Info: LED16FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap

LED1450-SERIES

Contextual Info: LED1450-series TECHNICAL DATA Infrared LED InGaAsP LED1450-series are InGaAsP LEDs mounted on a lead frame and encapsulated in various types of epoxy lens, which offers different design settings. On forward bias, it emits a high power radiation of typical 2.5 mW at a peak wavelength at

LED19-TEC-PR

Contextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC-PR 1.0 mW •Light Emitting Diodes LED19-TEC-PR are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates

LED38

Contextual Info: LED38 v 2.0 01.12.2014 Description LED19-PR series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 3.75 µm and optical power of typ. 30 µW qCW. It comes in TO-18 package, with cap and without window on request .