LDMOS 1W Search Results

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS

Contextual Info: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device

Contextual Info: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under

transistor c124

Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

LDU05M-R

Abstract: LDU05 power 470-860mhz w MRF282SR1 MRF282S
Contextual Info: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal

dvb-t transmitters

Abstract: LDU05 LDU05M-R transposers LDU05M MRF282SR1 AMPLIFIER 5W
Contextual Info: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal

GR002

Abstract: MRF282SR1 ldmos
Contextual Info: LDV05M 5W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 170 - 230 MHz 28 ÷32 V 30V Nominal

TL306

Abstract: TL184 TL167 TL307
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

transistor c118

Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

transistor c114

Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

MAR 737

Abstract: power 470-860mhz w Shoulder Electronics DVB-t2 470-860mhz Power amplifier 470-860MHz dvbt 2
Contextual Info: RPAM470860M01 Preliminary UHF DVB-T Module 1 Watt, 470 - 860 MHz The RPAM470860M01 is a 1W, UHF DVB-T amplifier module incorporating LDMOS technology. Utilizing SMA connectors and a single bias point connection, this module is ideal as a driver stage in a digital broadcast system.

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

XD010-42S-D4F

Abstract: ALT101 LDMOS 1W
Contextual Info: Preliminary Product Description XD010-42S-D4F The XD010-42S-D4F 10W power module is a 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process.

Anaren Microwave

Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Contextual Info: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been

Contextual Info: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit

GSM repeater circuit

Abstract: Rogers 4350 datasheet base station power amp GSM repeater GSM repeater power amplifier module RF MODULE XD010-42S-D4F er35
Contextual Info: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit

XD010-35S-D2F

Abstract: XD010-35S XD01035 RF amplifier module d2f schematic
Contextual Info: Preliminary Product Description The XD010-35S-D2F 10W power module is a 2-stage Class A/AB RF amplifier module for use in the driver stages of WCDMA power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS II process. The unit operates from a

Repeater rf

Abstract: Rogers 4350 datasheet schematic diagram 800 watt power amplifier XD010-42S-D4F GSM 900 mhz repeater circuit
Contextual Info: XD010-42S-D4F Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit

200 watt schematics power amp

Abstract: 80021 GSM repeater circuit Rogers 4350 datasheet XD010-12S-D4F AN060
Contextual Info: XD010-12S-D4F Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,

Rogers 4350 datasheet

Abstract: AN060 XD010-12S-D4F kemet f 881 GSM repeater power amplifier module LDMOS 15w
Contextual Info: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4FY is a 15 Watt, 2-Stage class A/AB LDMOS power amplifier module designed for use in the 869-894 MHz frequency band. The module is internally matched to 50 ohms and operates directly from 28V making system integration very simple. Internal