LDMOS 15W Search Results

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

45W Audio amplifier

Abstract: LDMOS 15w MRF284 LDL15
Contextual Info: LDL15 PRELIMINARY 15W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • • 1450 - 1500 MHz 28 ÷32 Volts 30V nominal

CD723

Abstract: PCC104BCTND PCC104bct-nd PTMA210152
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

Contextual Info: polyfet rf devices L88012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PTMA080152M

Abstract: RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K
Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

PTMA080152M

Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the

Infineon moisture sensitive package

Abstract: rj0c
Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

dvb-t transmitters

Abstract: GR00363 LDMOS 15w MRF9030 LDU25-R ldmos
Contextual Info: LDU25-R 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • •

Contextual Info: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband

dvb-t transmitters

Abstract: LDMOS 15w GR00363 LDU25 power 470-860mhz w MRF9030
Contextual Info: LDU25 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •

dvb-t transmitters

Abstract: MRF9060 LDMOS 15w Res-Ingenium
Contextual Info: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal

LDMOS 15w

Abstract: Rogers 4350 80021 cz12010t0050g T494D106M035AS C30C32
Contextual Info: Design Application Note AN 091 App Circuit, Balanced Configuration, 2 x XD010 LDMOS Modules Abstract Sirenza Microdevices’ XD010 series of LDMOS power modules operate in the 400, 800, 900, 1800, 1900, and 2100 MHz frequency bands. They deliver greater than

LDV75M

Abstract: LDV75M-R LDMOS 15w MRF9060 ldmos
Contextual Info: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal

Contextual Info: Part Number: Integra ILD0912M15HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M15HV is designed for Avionics TACAN systems operating at 960-1215 MHz. Operating at

Integra Technologies

Contextual Info: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,

Contextual Info: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS

CD723

Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

Infineon moisture sensitive package

Abstract: PTMA210152M RO4350 68c21
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

PTMA210152M

Abstract: RO4350 Infineon moisture sensitive package
Contextual Info: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in

LDMOS 15w

Abstract: BLF1043 EQUIVALENT BLF861 BLF861A BLF1822-10 BLF2045 09nH
Contextual Info: Philips Semiconductors LDMOS Broadcast Drivers Equivalent Circuits • BLF1043, BLF1822-10 and BLF2045 are LDMOS transistors which can be used in Band IV/V applications in conjunction with BLF861A • To support the use of these drivers in Band IV/V, equivalent in- and output circuits are shown

bd 142 transistor

Contextual Info: Part Number: Integra ILD0506EL350 TECHNOLOGIES, INC. P-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating at 480-610 MHz. Operating at a pulse width of 15ms with