LD 757 PS Search Results

Contextual Info: F E N W A L D E L E C T R O N IC S NTC / PTC Thermistors APPLICATION NOTE 7 BRIDGE CIRCUITS The resistance of an unknow n therm istor R2 could be determ ined using ohm s law. The therm istor w o u ld be put across a voltage source w h ile the current d raw n is m easured. H o w ever

diode sy 171 10

Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*

LD 757 ps

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

pt 9795

Abstract: LD 757
Contextual Info: F E N W A L L ] E L E C T R O N IC S NTC / PTC Thermistors APPLICATION NOTE 7 BRIDGE CIRCUITS The resistance o f an unknow n therm istor R2 could be determ ined using ohm s law. The Supply Voltage therm istor w o u ld be put across a voltage source w h ile the current draw n is m easured. How ever,

Contextual Info: Ul 1341 A/AC/FG/M F/BF/DL HITACHI/COPTOELECTRONICS Description she j> InGaAsP LP , MM'JbSOS 0 0 1 5 1 2 4 453 IHIT4 The HL1341A/AC/FG/MF/BF/DL are 1.3 im InGaAsP distributed feedback (DFB) laser diodes with buried hetero structure. They are suitable as light sources in high-bit-rate long distance fiber optic com­

rectifier ds3

Contextual Info: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description

Beckman 661

Abstract: 661 Beckman MRF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

Contextual Info: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: • 5 0 G 1 3 fll ÜDDSBST 1 2 e] WÊ L O W P O W E R H EX T T L -to -E C L T R A N S L A T O R SYNERGY SY100S324 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1.4ns T h e S Y 1 0 0 S 3 2 4 is a h e x tra n s la to r d e s ig n e d to co n v e rt

LD 757 ps

Abstract: smd code cfa
Contextual Info: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon

PSMN035-150B

Abstract: PSMN035-150P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA

5401 DM smd transistor

Abstract: 5401 DM PSMN070-200P PSMN070-200B 5401 DM transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA

Contextual Info: < p FUJITSU DS04-21330-1E DATA SHEET ASSP Single Serial Input PLL Frequency Synthesizer On-Chip 2.0 GHz Prescaler MB15E05 • DESCRIPTION The Fujitsu MB15E05 is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.0 GHz prescaler. A 64/65 or a 128/129 can be selected for the prescaler that enables pulse swallow operation.

Contextual Info: Preliminary PGT 201 10 Optical Transmitter Submodule for 10 Gbps The transmitter module, intended for 0C 19 2 /S T M -6 4 applications, consists of a D F B laser with integrated absorpton modulator mounted in a high-speed package including isolator. Features

TF5S03ZZ

Abstract: transformer dash 2 b-5
Contextual Info: Trans American Transformer, Inc. 26 H U L SE RD. • E. S E T AU K E T N E W V . I R h E N G I N E E R I N G H O T L I NE 51 6> 928-07* W 6 i TEL: 151 6 928-0762 FAX: 1516) 928-0852 THE SOURCE FOR M I LI TA R Y M A G N E T I C S MINIATURE 400HZ power transformers

Contextual Info: F E N W A L D E L E C T R O N IC S NTC / PTC Thermistors APPLICATION NOTE 6 TESTING CONSIDERATIONS Thermistors are heat sensitive devices that unacceptable, one of tw o things can be done. are affected by all sources o f heat energy. They Either the bath has to be controlled to a m ore

ic 7818

Abstract: tic 1260 LD 757 ps 25EV-07-1 steel thomas 37
Contextual Info: ThomasêBetts Eurostyle Electronic Connectors One Piece 0.250" STANDARD CONNECTORS WITH CAGE CLAMP SERIES 25 EV P h y s ic a l P r o p e r t ie s Housing: H o u s in g M A T E R iA L :T h e rm o p la s tic , p o ly e s t e r UL94V-0 F la m m a b ilit y : C o l o r : G re e n o r B la c k

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA

SMD Marking 4570

Abstract: PSMN070-200P PSMN070-200B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA

PSMN035-150P

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA

LD 757 ps

Contextual Info: * LOW POW ER HEX TTL-to-ECL TRANSLATO R SYNERGY SY100S324 S E M IC O N D U C T O R DESCRIPTION FEATURES Max. propagation delay of 1.4ns The SY100S324 is a hex translator designed to convert T T L logic levels to 100K ECL levels. The inputs are TTL com patible with diffe re n tia l o utputs that can e ith e r be