LD 641 Search Results

THC63LVDM83A

Abstract: 12v dc 240v ac inverter circuit diagram GS64 jst phr-6 DF14-2628SCFA FI-X30H FI-X30M LQ445D3LZ19 24v dc 240v ac inverter lcd graphics display 64128
Contextual Info: PRODUCT SPECIFICATIONS AVC Liquid Crystal Displays Group LQ445D3LZ19 TFT-LCD Module Spec. Issue Date: Feb. 16, 2005 No: LD-17209 RECORDS OF REVISION MODEL No. : LQ445D3LZ19 SPEC No. : LD-17209 DATE NO. 2005.02.16 LD-17209 REVISED No. − PAGE SUMMARY NOTE

stm-64 dfb

Abstract: FU-641SEA-1M1 FU-641SEA-1M2 FU-641SEA-1M3 FU-641SEA-1M4 OC192 STM-64 stm 64 laser diode 1550 nm 1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL photodiode 10Ghz PIN
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-641SEA-1Mx 1.55 µm EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-641SEA-1Mx is a 1.55µm EA modulator integrated DFB-LD module with singlemode optical fiber.

12v to 240v PWM inverter circuit

Abstract: THC63LVDM83A GS64 lcd graphics display 64128 DF14-2628SCFA FI-X30H FI-X30M LQ445D3LZ19 Back Light INVERTER MODULE LVDS 30 pin hirose connector df14
Contextual Info: RECORDS OF REVISION MODEL No. : LQ445D3LZ19 SPEC No. : LD-17209 DATE NO. 2005.02.16 LD-17209 REVISED No. − PAGE SUMMARY NOTE − − 1st Issue LD- 17209-1 1. Application This specification applies to the color 44.5” HDTV TFT-LCD module LQ445D3LZ19. * These specification sheets are proprietary products of SHARP CORPORATION “SHARP” and include materials

DFB ea

Abstract: DFB ea 10GHZ FU-641SEA-1M1 FU-641SEA-1M2 FU-641SEA-1M3 OC192 STM-64 10ghz optical modulator dfb-ld 1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-641SEA-1Mx 1.55 µm EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-641SEA-1Mx is a 1.55µm EA modulator integrated DFB-LD module with singlemode optical fiber.

Contextual Info: ANALOG ► DEVICES LC2M0S Analog I/O Port neously h eld by T rack /H o ld A an d T rack /H o ld B , and the held voltages are sequentially converted. FEATURES Four-Channel, 8-Bit, 3.6 |as ADC Three DACs with On-Chip Amplifiers: One 11-Bit, 8 fis DAC Two 8-Bit, 4 |x.s DACs

Contextual Info: PC07H hermetic jam nut receptacle • P C 0 7 H -X X -X X X "P C 0 7 Y -X X -X X X 'S o ld e r cup pin contacts without interfacial seal " S o ld e r cup pin contacts with interfacial seal Receptacle Front View Shell Size F 6 m 8 .331 10 .378 12 .442 14 •4M

Contextual Info: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 55 to 65

LC1 D12 wiring diagram

Abstract: vhdl code for 8 bit ODD parity generator 74139 Dual 2 to 4 line decoder TTL XOR2 tig ac inverter circuit cd4rle LC1 D12 P7 CB4CLED sr4cled CB16CE
Contextual Info: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_SPARTAN2 to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)

X9265

Abstract: TTL 7400 CB16CE Xilinx counter cb16ce ldpe 868 X4027 CB4CLED X8906 Xilinx Unified Libraries Selection Guide PRISM GT
Contextual Info: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_SPARTAN2 to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)

CB4CLED

Abstract: vhdl code for 2-bit BCD adder CB4CLE TTL 7400 CC16CLE cb4ce code D24E XC400XL CB2CE CB16CE
Contextual Info: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_VIRTEX to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)

EG8504

Abstract: transistor A1013 SEK1054B0A A1013 a1207 SEK1054B EPSON eg8504 eg8504c pcb lcd display connector cellular phone eg7502
Contextual Info: TT002-09 LCD Modules for Mobile Communications Product Catalog October/2000 - March/2001 October,2000 LD Marketing & Engineering Group Seiko Epson Corporation A Change in Product Catalog TT002-09 of LCD Modules for Mobile Communications The change is as follows:

6411G

Contextual Info: AlGalnP LD H L 6 4 1 1 G Description T he H L 6411G is a 0.63 |im band A lG alnP laser diode w ith a m ulti-quantum well M Q W structure. It is suitable as a light source for laser pointers, laser levelers and various o ther types o f optical equipm ent.

ADL63101TL

Abstract: v 19 adl 5 ADL 05 Laser diode pointer
Contextual Info: AlGaInP Visible Laser Diode ADL-63101TR/TL 2003/4/30 ★635nm 10mW 40 oC Reliable Operation • Features 1. High visibility, 635nm 2. MTTF > 5000hrs • Applications 1. Industrial laser markers 2. Measuring instruments 3. Class I, eye-safe laser pointer 4. High visibility LD display

tuner General T 1000

Contextual Info: SG S-THOMSON ßMDD 0 ®[l[LIi®M R!lD®@ T E A 6417 BUS-CONTROLLED VIDEO MATRIX SWITCH • 15MHz BANDWIDTH ■ CASCADABLE WITH ANOTHER TEA6417 INTERNAL ADDRESS CAN BE CHANGED BY PIN 7 VOLTAGE) ■ 8 INPUTS (CVBS, RGB, MAC, C H R O M A.) ■ 6 OUTPUTS ■ PO SSIBILITYO F MAC OR CHROMA SIGNAL

IRFI740G

Contextual Info: International S Rectifier PD-9.651A IRFI740G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss = 400V ^DS on = 0 - 5 5 0 lD = 5.4A

Contextual Info: P D - 91895 International I R Rectifier IRLL024N HEXFET Power MOSFET • Surface Mount • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Fast Switching • Fully Avalanche Rated V dss = 55 V RüS on = 0.065Î2 lD = 3.1 A

TEA6415B

Contextual Info: * 7*. SGS-IHOMSON H D » i[L i g W TEA6415B liì!lD ( g g BUS-CONTROLLED VIDEO MATRIX SWITCH • 15MHz BANDWIDTH ■ CASCADABLE WITH ANOTHER TEA6415B (INTERNAL ADDRESS CAN BE CHANGED BY PIN 7 VOLTAGE ■ 8 INPUTS (CVBS, RGB, MAC, CHROMA.) ■ 6 OUTPUTS

IRFI740G

Contextual Info: International S Rectifier PD-9.651 A IRFI740G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lso!ation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss - 400V ^DS on = 0 .5 5 Q lD = 5.4A

ls204 application

Contextual Info: Æ 7 SCS TH O M SO N LS204 G M 0 { g ^ [ lD , [ i© ‘F ^ O [ f a a © i HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIERS • ■ ■ ■ . LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION

Contextual Info: SO LD ER T E R M IN A LS 140-1018 .052 1,32 Mounting Hole Diameter (#55 Drill) — - _ 072 j SLOTTED L -i 12.30)— nee .068 (1.75 _ .02601a. (0’8e> I .oea 1_ (0.71) X .047 (1.19) COMPONENT I MATERIAL FINISH Terminal Silver Brass RECOMMENDED SWAGING TOOLS

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 00 R E VIS IO N S LTR DESCRIPTION P2 PARTS 1 C O M PLY TO AM P REVISED PER EC O -06- 029027 SO LD ERABILITY SPECIFICATION

TIP3051

Abstract: TLP3052 240/irf 3052
Contextual Info: TLP3051,3052 GaAs IRED a PHOTO-TRIAC TLP3051 U nit in mm OFFICE M ACHINE. H O USEH O LD USE EQ U IPM EN T. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3051 and TLP3052 consist of a photo-triac optically coupled to a gallium arsenide infrared em itting diode in a

Contextual Info: IRFS440A Advanced Power MOSEET FEATURES B V DSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 6.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V

Contextual Info: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V