LC-2-G DRAWING Search Results

Contextual Info: REV. ITEM Q'TY 1 1 FLPR-XX Flexible Light Pipe Adapter,90°, w/LED, See page 2 & 3. 2 1 LC-XX.X Flexible Light-Pipe Lens Cap Assembly PART NUMBER PART DESCRIPTION DESCRIPTION D E F G H J K Added Shipping Note and Tolerance Table Changed Length From 2.5 to 0.5 at "L" Table

Contextual Info: n 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. GP REVISIONS DIST 00 0 4 . 1 9 REF B R A C K E T C O R IN G , N O N F U N C T IO N A L H O LE, 2 0 3 . 1 8 ± 0 .0 8 2 PLC P LC

OV 5693

Contextual Info: / j \ HOUSING & TINE PLATE - LIQUID CRYSTAL POLYMER LC P , UL 9 4 V —0 , BLACK. 2. CONNECTOR SOLDER TAILS WILL ACCOMMODATE PRINTED CIRCUIT BOARD THICKNESS OF 0 .8 TO 1.6 [.0 3 1 TO .0 6 3 ], ^ G, J, H INDICATE NUMBER OF POSITION MARKED ON ASSEMBLY. ALSO SEE TABLE.

ATI 1026

Abstract: BZ-2RWT80 172DIA
Contextual Info: CATALOG LISTING MICRO SWITCH{uri or a w tm wnttfOUf-NOKmnu tffouwt «murr mmm.nm m FED . M F R . CODE 9 1 9 2 9 00 B Z-2R W T80 SWITCH - BASIC IMJ .3801.030- 1026+015 1 - ! 2.50 R Iw I ^ r r s lc s m g 1 .7901.020 , .665 + 030 FREE PO SITION OPERATING POSITION

Contextual Info: 4 10 3 1 2 1 1 NOTES: 1. M A T E R IA L : LIQUID C R Y S T A L L IN E P O LY M E R LC P , G L A S S F IL L E D , U L 9 4 V - 0 , COLOR: B L A C K T E R M IN A L: C O PPER A L L O Y CIRCUIT aS1 2. P L A T IN G C O N TA C T: 0.76L+H MIN. S E L E C T IV E GOLD O VER 1.27Pm MIN. N IC K E L U N D E R P L A T E

Contextual Info: LITEM i? I SEMICONDUCTORS SR3001 thru SR3007 DO-201 AD FEATURES • L o w co st • L o w leakage • L o w fo rw a rd vo lta g e d ro p .2 1 0 5.3I .188 (4.8 • H igh c u rre n t c a p a b ility D IA • E a sily cleaned w it h F re o n , A lc o h o l, C h lo ro th e n e and

1-776267-1

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALI RI6UT5 RESERVES. M A T E R IAU: R E V IS I O N S GE 00 A C C E P T S #4 S E L F T A P P IN G S C R E W E LC O H I- L O T H R E A D CUTTING S T Y L E O R E Q U I V A L E N T TO B E D R I V E N A T 0 . 0 ± 0 . 2 N - M .

Contextual Info: LITEM f I SEMICONDUCTORS ER1001 thru ER1007 FEATURES • L o w co st DO-41 • D iffu s e d ju n c tio n • L o w leakage • L o w fo r w a rd vo lta g e d ro p • H igh c u rre n t c a p a b ility • -0 3 4 .86 .0 2 8 (.71) 1.0 (25.4) M IN E a sily cleaned w ith F re o n , A lc o h o l, C h lo ro th e n e and

1mb60

Contextual Info: m 1-Pack IGBT m m 1MBIS00NP-060 IGBT MODULE N series '8SÏ Outline Drawing • Features Square R B SO A • Low Saturation Voltage • Less Total Pow er Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

Contextual Info: 6MBI75FA-060 tsa Fuji Power Module IGBT MODULE ( F series) O utline Drawings • Features • Low Saturation Voltage • Voltage Drive • All Screw Terminals for Automated Assembly ■ A p plications • Inverter for M otor Drive • AC and DC Servo Drive Am plifier

8f120

Abstract: dc servo M604 RG15 8F-120
Contextual Info: F U JI MUMËïïraiÊ 6-Pack IGBT 1200 V 8A 6MBI 8F-120 IGBT MODULE ( F series Outline Drawings • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive Am plifier

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3001 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING D i m e n s i o n s in m m 2 S C 3 0 0 1 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATURES

Contextual Info: T H I S DRAWING IS C O P Y R IG H T U N P U B L IS H E D . R E L E A S E D BY 2 00 6 TYCO E L E C T R O N I C S C ORP ORA TIO N, FOR ALL P U B L I C A T I O N IN T E R N A T IO N A L LOC R IG H T S R E V I S I ONS R E S E R V E D . D E S C R I P T I O N R E V I S E D

Contextual Info: _ _ _ _ IGBT & FWD 12sT 1MB 08D-120 Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • M inim ized Internal Stray Inductance ■ Applications • High Pow er Switching

MPA80

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low N oise, High Gain • O p e ra b le at Low V o lta g e • S m all F eed-back C apacitance

10D120

Abstract: 10D-120 25CC
Contextual Info: F U J I IGBT & FWD 1200 V 10 A 1MB 10D-120 tlU J M H T D S D E Fuji Discrete Package IGBT Outline Drawing • Features > Square RBSOA > Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance I Applications • High Pow er Switching

282994-3

Contextual Info: T H IS DRAWING IS UNPUBLISHED. QUESTO DISEGNO NON DEVE ESSERE DIVULGATO 0 RIPRODOTTO S I RELEASED FOR PUBLICATIO N E ' CONSENTITA LA DIVULGAZIONE ALL RIGHTS RESERVED. BY AMP INCORPORATED. TUTTI I D IR IT T I SONO R ISER VA TI COPYRIGHT 19 19 LOC DIST REVISIONS

400V INDUSTRIAL voltage regulator

Abstract: 1MBI25FE-120 DC regulator with IGBT
Contextual Info: 1MBI25FE-120 25A Fuji Power Module IGBT MODULE ( F series) Outline Drawings • Features • Low Saturation Voltage • Voltage Drive • Isolated Package ■ Applications • Ideal for Shunt Regulator Application • Inverter for Motor Drive • AC and DC Servo Drive Amplifier

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3103 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2 S C 3 1 0 3 is a silicon N PN epitaxial planar ty p e tra n sisto r s p e c ifi­ OUTLINE DRAWING D im ensions in mm cally designed for U H F p ow er am plifier applications.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

Contextual Info: MITSUBISHI RF POWER MODULE fa s iW i ooi?ab7 a-rt • , M57786H 470-512MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45 ± 0 . 5 42±1 2 - R 1 . 6 ± 0 .5 in o +1 — y _ ■€ ¿ 0 .4 ± 0.2 5±1 9± 1 9± 1 5±1 PIN : 8 .5 ± 1

KS621K20

Abstract: ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417
Contextual Info: m w m oc KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S M g lG D â tH n g tO fl Transistor Module 200 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power