LC 945 TRANSISTOR Search Results

m lc 945

Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

BDS945

Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Contextual Info: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors

m lc 945

Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
Contextual Info: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope

lc 945 p transistor

Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Contextual Info: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

lc 945 p transistor

Contextual Info: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

527H

Abstract: D 1413 transistor S822T
Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

lc 945 transistor

Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

BD947

Abstract: BD943 b0945 BD945 lc 945 transistor BD944
Contextual Info: BD943 BD945 BD947 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. Q UICK REFERENCE D A TA

BD943

Contextual Info: BD943 BD945 BD947 _J \ _ SILICO N EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

D 1991 AR

Abstract: BD945
Contextual Info: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

bd947

Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

b0945

Abstract: bd947 BD944 BD945 BD943
Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA

transistor BC 945

Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
Contextual Info: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage

ksd 250v 10a

Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623

lc 945 p transistor

Abstract: 852 d TRANSISTOR lc 945 p transistor NPN 2sc945 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y
Contextual Info: 2SC 945 NFN SILICON PIANAR EPITAXIAL TRANSISTOR 1I o h ! i| '£ ? r - r - . , - í ^ .- - .i '•-ÿ ! « f c * CASE TO-92B 2SC 945 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.

lc 945 p transistor

Abstract: transistor LC 945 lc 945 transistor
Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for

lc 945 p transistor

Abstract: 362-0 transistor
Contextual Info: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

lc 945 transistor

Contextual Info: ERICSSON ^ PTB 20105 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP

lc 945 transistor

Contextual Info: ERICSSON ^ PTB 20097 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for

lc 945 p transistor NPN TO 92

Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Contextual Info: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E

lc 945 p transistor NPN

Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor
Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.

c945 transistor

Abstract: TRANSISTOR c945 p C945 P C945 NPN transistor transistor C945 C945 BR c945 transistor BR c945 C945 RI C945 TO92
Contextual Info: TO-92 Plastic-Encapsulate Transistors ^ C 945 TR A N SISTO R N PN FEATURES HSR9RB9RB Pow er TO-92 P cm ; 0 .4 W (Tam b=25°C) C ollector current 1.E M I T T E R Ic 2.C O L L E C T O R m : 0.15 A G S flttSR S S B fiB E S C ollector-b ase voltage 3.B A S E