0034T Search Results

Contextual Info: T262C276K020MS7200 aka T262C276K020MS7200 M39003/09-0034TR CSR21E276KM7200 Capacitor, tantalum, 27 uF, +/-10% Tol, 20V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 7.34 17.42 20.88 0.64 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer:

Contextual Info: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

Contextual Info: Philips Components Data sheet status P ro d u ct s p e c ific a tio n date of issue April 1991 BDS644/646/648/650/652 PNP silicon Darlington power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m onolithic Darlington circu it in a

T1693M

Abstract: TL593M TL-694 TL593 ic TL694C TL495 TL493 ST TL493 TL593 tl693
Contextual Info: TEXAS S9S1724 INSTR TEXAS -CLIN /IN TFO IN ST R SS D Ë J ÖTblTEM 0D34t54 <LIN/INTFC 55C 1 |~ 34624 T-5 8-1 1 -3 1 TYPES TL593, TL594, TL595 PULSE-WIDTH-MODULATION CONTROL CIRCUITS LINEAR INTEGRATED CIRCUITS D2712, APRIL 1983-REV1SED DECEMBER 1983 Complete PWM Power Control Circuitry •

Contextual Info: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.

10BASE2

Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Contextual Info: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph­ eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

AM27C512

Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

BF 830 transistor

Contextual Info: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.

Contextual Info: TIP32; A TIP32B; C _ / V SILICON EPITAXIAL BA SE POWER TRANSISTORS PNP transistors in a plastic TO-220 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.

tip112a

Abstract: TIP112 TIP111 TIP110 transistor TIP110 TIP115 TIP116 darlington 131 tip
Contextual Info: TIP110 TIP111 TIP112 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am p lifie r and switching applications. TO-22QAB plastic envelope. P-N-P complements are

SDA8010

Contextual Info: M?E D J O m S23SbDS ]□34TbS b • SIEG SIEMENS AKTIENGESELLSCHAF ' V T - S l- tO - O SDA 8010 8-Bit A/D Converter, 100 MHz Bipolar 1C Preliminary Data Features • • • • • • • 100 MHz min. strobe frequency 6.3 effective bits at 30-MHz input frequency

Contextual Info: Advanced Micro Devices A m 27C 1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Fiashrite programming ■ Fast access time — Typical programming time of 8 seconds — 70 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

Contextual Info: K M 4 4 C 4 10 3 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

Contextual Info: TIP31; A TIP31B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A SILICON EPITAXIAL BASE POWER TRANSISTORS N PN transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. PNP complements are T IP 3 2 series.

Contextual Info: TIP41 ;A TIP41B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended fo r use in general purpose amplifier and switching applications. PNP complements are TIP42 series.

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP120 TIP121 TIP122 _/ V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are TIP125, TIP126

Contextual Info: ^ Z JL O E P r e l im in a r y P r o d u c t S p e c if ic a t io n Z89C00 1 6 - B it D ig it a l S ig n a l P r o c e s s o r FEATURES 16-Bit Single Cycle Instructions • 16-Bit I/O Port Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM 16-Bit Data

10BASE2

Abstract: 10BASE5 AD8G fxs interface integrated circuit Am79C790 am33c93
Contextual Info: a PRELIMINARY. Am79C974 PCnet -SCSI Combination Ethernet and SCSI Controller for PCI Systems Advanced Micro Devices DISTINCTIVE CHARACTERISTICS PCI Features SCSI Features • Direct glueiess interface to 33 MHz, 32-bit PCI local bus ■ Compliant to ANSI standards X3.131 -1 986

Contextual Info: TIP41F; 41AF TIP41BF; 41CF SILICON EPITAXIAL POWER TRAN SISTO RS N PN silicon epitaxial power transistors, each in a S O T 186 envelope with an electrically insulated mounting base. PN P complements are T IP 4 2 F , T IP 4 2 A F , T IP 4 2 B F and T IP42C F.

TIP42A

Abstract: TIP41 TIP42 TIP42B TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131
Contextual Info: TIP42;A TIP42B;C SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general ou tput stages o f am plifier circuits and switching applications. NPN complements are TIP41 series. Q UICK REFERENCE D A T A