LBC858 Search Results

operation of BC557 TRANSISTOR

Abstract: BC557 sot-23 BC556 sot package sot-23 BC558 SOT-23 LBC856BWT1G BC557 sot package sot-23 information of BC558 TRANSISTOR 3F t transistor BC558 base collector emitter BC856
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

bc557

Abstract: BC856 BC857 BC858 LBC856AWT1G LBC856BWT1G LBC857AWT1G LBC857BWT1G LBC858AWT1G LBC858BWT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

LBC856BWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G PNP Silicon These transistors are designed for general purpose

LBC857CWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G General Purpose Transistors PNP Silicon These transistors are designed for general purpose

bc557

Abstract: bc556 equivalent bc557 package sot23 of pnp transistor BC557 free BC557 BC556 SOT BC556 sot package sot-23 BC557 SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

LBAS16TW1T1G

Abstract: list of transistor LMBT5551DW1T1G LBC846BPDW1T1G ME2N7002kw TRANSISTOR 1008-01 LBAT54DW1T1G LBC846ADW1T1G LMBT2222ADW1T1G LMUN5336DW1T1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 100801 PCN Issue Date: 5th Aug' 2010 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SC88 and SC88A Packages

LBC858ALT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85XBDW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 5 4

operation of BC557 TRANSISTOR

Abstract: bc557 LBC856BDW1T1 sot-36
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC856*DW1T1 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking:

LBC856BDW1T1G

Abstract: LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

LBC857BLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G

LBC857ALT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with

LBC857CLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with