LB414E Search Results

Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

Contextual Info: KM48V514DT CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: IRLM210A Advanced Power MOSFET FEATURES b v dss = 200 V • Avalanche Rugged Technology 1.5 Î2 ■ Rugged Gate Oxide Technology ^DS on — ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area SO T-223 ■ Lower Leakage Current : 10 |iA (M ax.) @ VDS = 200V

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

Contextual Info: IRLS520A Advanced Power MOSFET FEATURES • Logic Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 100V