LB 125 TRANSISTOR Search Results

Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

marking code SM diode

Abstract: 10KW DCX4710H DDTA114YE DDTC114EE transistor Marking code 1KW MARKING code 46 sot 563
Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

NPN PNP sot-563

Abstract: DCX4710H DCX4710H-7
Contextual Info: DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of

Contextual Info: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of

4N4X

Contextual Info: 66138 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 6 PIN LCC, ELECTRICALLY SIMILAR TO 4N22, 4N23, 4N24, 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor

LB-19

Abstract: BU2520A BY228 ak4a po254
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Contextual Info: 66064 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 20 PIN LCC, ELECTRICALLY SIMILAR TO 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor

transistor BJ 102 131

Abstract: ysus transistor 11a TRANSISTOR BJ 131
Contextual Info: rZ 7 Ä 7# S G S -T H O M S O N H 0 M [ i ^ O T « S B U V 40 FAST SWITCHING POWER TRANSISTOR • FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH G AIN FOR REDUCED LOAD O PERA­ TION TO-3 A B S O L U T E M A X IM U M R A TIN G S

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)

Contextual Info: Illl = V r= Illl SEME BUL56B-SM LAB NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES 11.5 2.0 3.5 •LOW SATURATION VOLTAGE 0.25 r* 3.5 •ULTRA FAST TURN-ON AND TURN-OFF SWITCHING tr / t f = 40ns 3.0 r4 * J —k ÏT APPLICATIONS 14

Contextual Info: BUF646 • BUF646A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

2N6339

Abstract: 2N6338 2N6340 2N6341
Contextual Info: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage

2N5769

Contextual Info: SEMICONDUCTOR 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

2N4399

Abstract: 2N4398 2N5301 2N5302 2N5303 2N5745
Contextual Info: PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use in amplifier and switching applications. Boca Semiconducotor Corp. fe a tu re s : *DC Current Gain Specified-1.0 to 30 A * Low Collector-Emitter Saturation Voltage - RSP 75 V Max @ 'c = 10 A - 2N4398, 2N4399

sm9b

Abstract: BUT230V BUT23 BUT230 a/SM9B
Contextual Info: rz 7 ^ 7# S G S -T H O M S O N BKiineæilLigO’iOiDlBg_B U T 2 3 0 V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT

TRansistor 1300 free

Abstract: BU2508A LB 1300 TRANSISTOR
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

tm1101

Abstract: Diode schottky eb PZTM1101 PZTM1102
Contextual Info: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.

2N5769

Contextual Info: S E M IC O N D U C T O R • 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

BU508AW

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.

Contextual Info: JAN, JANTX, JANTXV,4N22, 4N23, 4N24 OPTOCOUPLERS mu O P T O E LE C TR O N IC PRODUCTS D IV IS IO N A V A ILA B LE T H R O U G H DISTRIBUTION FEATURES: • Base lead provided for conventional transistor biasing • Overall current gain.1.5 typical 4N24

I v48a

Abstract: bux48 bux48a
Contextual Info: r z z SCS-THOM SON Ä 7 # saDMiilUSSraMffiS BUX48/48A BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS . . • ■ . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . SWITCH MODE POWER SUPPLIES

CA3081

Abstract: CA3082 CA3081 HARRIS CA3081F transistor Common collector configuration DR2000 equivalent
Contextual Info: HA RR IS SEMICON] S E CT OR HARRIS S E M I C O N D U C T O R 4 3 0 2 27 1 O G H T D G l 276 blE D HAS CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA)

2n6388

Abstract: 2N6387 2N6386 2N6666 2N6667 2N6668
Contextual Info: ¿ J A m o s p e c DARLINGTON SILICON POWER TRANSISTORS NPN 2N6386 2N6387 2N6388 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV c e o c s u s , = 40 V Min - 2N6386 = 60 V (Min) - 2N6387

BU2527A

Abstract: 7M5 diode
Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for