LB 121 NPN TRANSISTOR Search Results

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»

tip127 darlington

Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127
Contextual Info: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121
Contextual Info: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag

IP122

Abstract: transistor darlington TIP-120 tip122c TIP120
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary

ic Lb 598 d

Abstract: GS121 ic Lb 598 sgs120
Contextual Info: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic

tip15

Abstract: tip122 data tip12
Contextual Info: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —

TIP 122 transistor

Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60

LB 122 transistor To-92

Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic

Contextual Info: TIP29 SERIES' - TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS T O -2 2 0 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

260TC

Abstract: KSE3055T
Contextual Info: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage

tip29

Abstract: 29a transistor
Contextual Info: TIP29 SERIES TIP29/29A/29B/29C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS I T O -220 • C omplementary to T IP 3 0/30 A /3 0B /30C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

LB 122 transistor

Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR
Contextual Info: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120

LB 122 transistor

Contextual Info: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127

Contextual Info: Central semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

BM sot223 marking code

Contextual Info: Central CBCP68 NPN CBCP69 PNP Semiconductor Corp. SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR, CBCP68, CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

KSC2333

Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

transistor BF 697

Abstract: BF 273 transistor transistor l81
Contextual Info: BSV52 . Æ ^Æ N a t i o n a l Di scret e POWER & Signal Technologies Semiconductor BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m Ato 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

tip73

Abstract: c2688 L TIP73A 1N914M 1N914F C2688
Contextual Info: TEXAS INSTR {OPTO} tâ DErjflTblT St. Ô 9 6 1 7 2 6 TEXAS INSTR OPÏUJ 003LÛ44 62C 36844 TIP73, TIP73A, TIP73B, TIP73C N-P-N SILICON POWER TRANSISTORS T - J J - f J F E B R U A R Y 1 9 7 7 - R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIP74, TIP74A, TIP74B,

transistor MRF 254

Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
Contextual Info: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran­

Contextual Info: 30E D • 7 ^ 2 3 7 0030^3^ f Z 7 S G S -T H O M S O N ^ IlL E O g ilià llO ïï^ M O O S S G S-TH0MS0N G ■ ' T ;3 3 " O f? BF457 B F 4 58 -B F 45 9 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTIO N The BF457, BF458 and BF459 are silicon planar epitaxial NPN transistors in Jedec TO-126 plastic