LASER QUADRANT DETECTOR Search Results

Contextual Info: DATASHEET Photon Detection YAG YAG-444-4AH Silicon PIN Quadrant Detector Key Features and Benefits The YAG series high-performance Si PIN photodiodes are well-suited for applications such as munition guidance, laser spot tracking and others. E T YAG series of Silicon PIN quadrant detectors are

large area quadrant photodiode

Abstract: quadrant detector
Contextual Info: Select Products Here Go DESCRIPTION The TOX 9105 is a high-speed quadrant-geometry, high-resistivity P-type silicon photodiode. This device is designed specifically for applications in low cost laser alignment, guidance and angular displacement systems. A guard ring structure is

Contextual Info: «OI T0X9105 Large Area Silicon Quadrant Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9105 is a high-speed quadrantgeom etry, h ig h -re s is tiv ity P-type s ilic o n photodiode. This device is designed specifically for applications in low cost laser alignment,

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

large area quadrant photodiode

Abstract: SPOT-15-YAG 1064 nm UDT Sensors PSD photodiodes
Contextual Info: YAG Series Nd:YAG Optimized Photodetectors The UDT YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing

Contextual Info: SD551-23-41-221 Quad NIR Enhanced Silicon P-Type Detector The SD551-23-41-221 features a large area 1064nm enhanced high voltage P-type silicon segmented quadrant detector mounted in a one inch 7-pin TO package. This device is designed to provide very high responsivity at 1064nm, ultra low capacitance and fast response

SD551-23-41-221

Contextual Info: SD551-23-41-221 Quad NIR Enhanced Silicon P-Type Detector The SD551-23-41-221 features a large area 1064nm enhanced high voltage P-type silicon segmented quadrant detector mounted in a one inch 7-pin TO package. This device is designed to provide very high responsivity at 1064nm, ultra low capacitance and fast response

SD441-23-41-221

Abstract: Advanced Photonix Inc high speed laser detector
Contextual Info: Advanced Photonix, Inc. 1240 Avenida Acaso Camarillo, CA 93012 805 987-0146 SD441-23-41-221 Quad NIR Enhanced Silicon P-Type Detector The SD441-23-41-221 features a large area 1064nm enhanced high voltage P-type silicon segmented quadrant detector mounted in a

Contextual Info: •70/ TOX 9109 Silicon PIN Detector Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9109 is a low noise, high speed quadrant high resistivity P-type silicon detector. Low noise is aided by the guard ring construction. Normally operated in the fully depleted mode higher

Contextual Info: T0X9109 Silicon PIN Detector m i- m i Texas Optoelectronics, Inc. lllll m V v l DESCRIPTION FEATURES The TOX 9109 is a low noise, high speed quadrant high resistivity P-type silicon detector. Low noise is aided by the guard ring construction. Normally operated in the fully depleted mode higher

pyroelectric amplifier circuit

Abstract: New England Research center New England Research "Pyroelectric Detectors" quadrant detector "Pyroelectric Detector" pyroelectric OPF-L "LTO"
Contextual Info: 'm w m m NEW ENGLAND S1E RESEARCH D • bSb4=134 Room Tem perature O peration ■ High R esp o nsivity Flat S p ectral R esponse ■ P ream p lifiers A vailable Type LTO-B and Type LTO-T pyroelectric detectors are fabricated from high quality, single crystal lithium tantalate material

Contextual Info: PHOTONIC DETECTORS INC. 1.06 Micron, High Speed Silicon Photodiode Quadrant Type PDI-M304 PACKAGE DIMENSIONS INCH [mm] GUARD RING Ø .356 [9.04] ELEMENT # 3 CATHODE .260 [6.60] ELEMENT # 4 (CATHODE) COMMON/ CASE (ANODE) ELEMENT # 2 (CATHODE) .162 [4.11] SQ

silicon pin photodiode laser detection

Contextual Info: PHOTONIC DETECTORS INC. 1.06 Micron, High Speed Silicon Photodiode Quadrant Type PDI-M305 PACKAGE DIMENSIONS INCH [mm] Ø1.000 [Ø25.40] .500 [12.70] Ø.635 [Ø16.13] GUARD RING 1 4 1 3 2 Ø.845 [21.46] 2 3 4 + 6X Ø.030 [0.76] R R R R L L L L .500 [12.70]

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

Contextual Info: R R series Thermal Emission Microscope IAHEAI New High-sensitivity detector thermal detector InSb Motorized turret with objective lenses • Two objective lenses for analyzing thermal emissions • Three objective lenses for probing and laser scanning Thermal Emission Microscope

Q4010LS2

Abstract: BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor Q4015L5 laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier
Contextual Info: EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second

quadrant detector

Contextual Info: MIRA4 MIRA4 - Mid-Infrared Array • 4 discrete optical channels in a small TO-5 package • Spectral sensitivity range: 1.0-5.0 µm • 99.5% channel isolation (nominal) Cal Sensors MIRA4 mid-infrared array in a quadrant format includes four, 1mm square lead

Contextual Info: T O X 9 10 5 L a rg e A r e a S ilic o n Q u a d ra n t P h o to d io d e «IO# Texas Optoelectronics, Inc. FEATURES DESCRIPTION The TOX 9105 is a high-speed quadrantgeometry, high-resistivity P-type silicon photodiode. This device is designed specifically

quadrant detector

Abstract: rs 194-026 74HCT04 BC184 IEC8 smoke detector schematic schematic 3.5mm short distance measurement PSD Light Detector laser
Contextual Info: Issued July 1996 021-732 Data Pack F Laser diode modules Data Sheet This data sheet covers the following items: Device Beta TX series 1mW modulating 3mW modulating 3mW modulating Beta CW series 1mW continuous wave 1.5mW continuous wave 3mW continuous wave

CLASS II LASER

Abstract: BC184 BS7192 785nm laser triangulation 74HCT04 cm218 smoke detector schematic schematic quadrant detector short distance measurement PSD
Contextual Info: Issued November 1997 262-1233 Data Pack F Laser diode modules Data Sheet This data sheet covers the following items: Device Beta TX series 1mW modulating 3mW modulating 3mW modulating Beta CW series 1mW continuous wave 1.5mW continuous wave 3mW continuous wave

CLASS II LASER

Abstract: 74HCT04 BC184 IEC8 quadrant detector 213-3629 Light Detector laser
Contextual Info: Issued March 1997 232-6203 Data Pack F Laser diode modules Data Sheet This data sheet covers the following items: Device Beta TX series 1mW modulating 3mW modulating 3mW modulating Beta CW series 1mW continuous wave 1.5mW continuous wave 3mW continuous wave

large area quadrant photodiode

Abstract: quadrant avalanche photodiode 4-element linear photodetector
Contextual Info: 204-74-74-561 Quadrant LAAPD Array The 204-74-74-561 is a highly sensitive 4-element array photodetector, built on the basis of the API proprietary Large Area Avalanche Photodiode technology. Advanced micromachining techniques have been implemented for the element pixelization, thus

Contextual Info: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2