LACP12 Search Results

SM5810SI

Contextual Info: JUl ï B ’993 SM5810SI 1MByte IM x 8 Separate I/O CMOS DRAM Module General Description Features T h e S M 5810SI is a high perform ance, 1-m egabyte d ynam ic R A M m odule organized as 1M w ords by 8 bits (separate inputs and outputs), in a 30-pin, leadless,

Contextual Info: SM572Q4400UE3GU 32MByte 4M X 72 CMOS DRAM Module -ECC Generai Description Features The SM57204400UE3GU is a high performance, 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, leadless dual-in-line memory module (DIMM) package with JEDEC ECC

Contextual Info: dUl 1 p 1993 SM5321000 4MByte 1M x 32 CMOS DRAM Module General Description Features The SM 5321000 is a high performance, 4-megabyte dynamic RAM m odule organized as 1M words by 32 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.

72 pin dimm

Contextual Info: Q R -IM G -10 Revn : Nil Date : 23.05.1997 Aspect Development Inc. DISCLAIMER During the production process, it was found that pages within this section are missing from the original source document. Page s numbering 8 & 9 are not available from the manufacturer at this point.

Contextual Info: JUL *6 »93 SM532512 2MByte 512K X32 CMOS DRAM Module General Description Features The SM532512 is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 32 bits, in a 72-pin, leadless, SIMM package. The module utilizes sixteen CMOS 256Kx4 dynamic