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    L8701 Search Results

    L8701 Datasheets (1)

    Polyfet RF Devices
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    L8701P
    Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF 40.91KB 2
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    L8701 Price and Stock

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    iNRCORE LLC PL8701T

    - Tape and Reel (Alt: PL8701T)
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    Avnet Americas PL8701T Tape & Reel 8 Weeks 300
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    iNRCORE LLC PL8701NLT

    - Tape and Reel (Alt: PL8701NLT)
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    iNRCORE LLC PL8701

    - Rail/Tube (Alt: PL8701)
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    Avnet Americas PL8701 Tube 8 Weeks 30
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    iNRCORE LLC PL8701NL

    - Rail/Tube (Alt: PL8701NL)
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    Avnet Americas PL8701NL Tube 8 Weeks 30
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    Fairview Microwave Inc FMFL8701A

    Signal Conditioning Bandpass Cavity Filter Operating from 2.2 GHz to 2.5 GHz With SMA Female Connectors
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    Mouser Electronics FMFL8701A
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    Newark FMFL8701A Bulk 1 1
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    L8701 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    L8701P

    Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    l8701p PDF

    L8701P

    Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    l8701ptemperat55 PDF

    Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    l8701p PDF

    Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    l8701p PDF

    Contextual Info: polyfet rf devices L8701P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    l8701p PDF

    ML4432

    Abstract: L8611 PD2101 ML4102A ML4402A ML4102 740nm PD1002 ME1514 L9611
    Contextual Info: 6 2 49 82 9 M ITSUBISHI DISCRETE SC _ 97D 13626 T? D É flb E ^ ñ e ^ D D D iahE t. 7^- * 7 - O S ' - 1 Laser Diodes_ ) Mitsubishi laser diodes are high-performance light sources that offer extremely stable single-mode oscillation with a low threshold


    OCR Scan
    l4405l5101al5401al6411a+15l6101al6701al7611l8611l8701me1013ml4432pd2101ml4102aml4402aml4102740nmpd1002me1514l9611 PDF

    cx20582

    Abstract: IT8512E-L MAX17033 Conexant CX20582-10z MAX17033G T4610 CX20582-10z asus C4429 circuit max17031e
    Contextual Info: 5 D C B A 4 01 Block Diagram 61 02 System Setting 62 USB CONN 03 POWER SEQUENCE 63 * 04 CPU-Penryn HOST 64 * 05 CPU-Penryn(PWR) 65 06 * 66 * 07 Cantiga(HOST) 67 DEBUG CONN 08 Cantiga(DMI & CFG) 68 DC & BAT IN 09 Cantiga(GRAPHIC) 69 * 10 Cantiga(DDR2) 70 *


    Original
    it8512e-lcx20582gen-ics9lpr363dglf-trtl8111c+13r8720d8701l8300r8200ce8000max17033conexant cx20582-10zmax17033gt4610cx20582-10zasusc4429 circuitmax17031e PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original
    l8821plb421lp721sm341+8lq821sq701sr401mgcf21ly942mosfet 50 amp 1000 voltgx40025 watt hf mosfet PDF

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original
    200num1sq221lk822lk722+11lx521rf push pull mosfet power amplifier100 watt hf mosfet 12 volt150w amplifier rf vhf 139 144 mhzuhf 150w mosfet150w amplifier rf vhf 139 - 144 mhzldmos 15wldmos l2711 vhflp801lk602lr941 PDF

    Contextual Info: epitex Opto-Device & Custom LED Φ10 MOLD LED LAMP L870-10UP L870-10UP LN870-10UP Infrared LED Lamp L870-10UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation which peaks at 870nm. ♦Specifications


    Original
    l870-10upln870-10up870nmj-6512 PDF