L51 U2 Search Results

HOA0890-L51

Abstract: infrared white black sensor HOA0890 IR emitter sensor
Contextual Info: Datasheet - HOA0890-L51 HOA0890-L51 HOA Series Infrared Opaque Sensor, Transistor Output, Single Mounting Tab, Emitter Side, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval

D 883 A

Abstract: GP1L51 GP1L52V GP1L54 GP1L52 C881
Contextual Info: GPl L50/GPl L51/GPl L52V/GPl L54 GPlL50/GPl L51 GPlL52V/GPlL54 High Sensitivity Photointerrupter • Features H App6cations 1. OA equipment, such as floppy disk drives, printers, facsimiles, etc. 2. VCRS 1 High sensing accurancy Slit width : 0.i5mm 2. High current transfer ratio

MPS-L51

Abstract: mpsl51 mpsl01 MPS-L01 pt 100 to92 l51 transistor RCA transistors 017TT4
Contextual Info: G E SOLID STATE 3875081 " G E SOLID "Öl STATE DE | 3075001 □ 0 1 7 C]T4 T 01E 1 7 9 94 D Signal Transistors MPS-L01, MPS-L51 Silicon Transistors TO-92 T h e G E /R C A MPS-L01 N PN type and the MPS-L51 P N P type are planar epitaxial silicon transistors designed for generalpurpose, high-voltage amplifier applications. PN P values are

st 9121

Abstract: l 9113 3 lead led bicolor common anode red 5mm LED
Contextual Info: L50/L51 T1 3/4 Front Mount LED Indicator Special Features • Front mounting, snap-in—no mounting hardware required • Simplified one-piece construction • Fits panel thickness from ,031˝ .787 to .062˝ (1.574) Specifications • Mounting hole: .250˝ (6.35)

MPS-L51

Abstract: transistor BF 2030
Contextual Info: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage

MN 9102

Abstract: mn 9105 L 9132 8751 characteristics
Contextual Info: L50/L51 T1 3/4 — RoHS Compliant Front Mount LED Indicator Special Features • Front mounting, snap-in—no mounting hardware required • Simplified one-piece construction • Fits panel thickness from ,031˝ .787 to .062˝ (1.574) Specifications • Mounting hole: .250˝ (6.35)

AN5606K

Abstract: an5606 AN5371S IC AN5606K Signal Processing an5601k analog AN5836 an5858k AN5512 AN-5025
Contextual Info: ICs/LSIs for TV • Chroma Signal/Video Signal Processing Circuits Type No. MN8230A O perating V oltage Functions V 4.75 ~ 5.25 Package Digital com b filter 84-QFP Picture in picture controller 64-QFP(a) No. L59 L51 MN8232A 4.75 - 5.25 AN5302K Veci — 12, Vccj — 9

K2640

Abstract: 1000K3-2
Contextual Info: 材質特性 初 透 材 質 名 K32 L51 K14 K26 iac 700 350 100 40 磁 率 飽和磁束密度 Bs mT 300 340 360 350 残留磁束密度 Br mT 160 260 230 100 保 Hc A/m 30 40 320 750 x10 1.7 1.5 5.5 15 MHz 0.4 0.5 6.0 10 磁 力 −5 相 対損 失係 数

TF070

Abstract: B 303 D TF1204 Z/Z/ats 2502
Contextual Info: バルンコア 品番の呼称 K51 TF 06 05 高 さ 外寸法 形 状 材質名 形状と寸法 ● タイプB ● タイプA H φD C b H φd d H A 形状番号 D TF0605 6.5±0.3 5.5±0.3 1.3±0.2 2.5±0.2 適用材質 K32,L51,K14,K26 C C 0.5 A E A φD

L51A

Abstract: 51yt
Contextual Info: y y KINGBRIGHT ELECTRONIC ETE D h i-a S n ? 0 D 4 □0DDQ45 E ,« Kingbright Electronic Co., Ltd. Mail Address: P .O .B ox 81-153 Taipei, Taiwan Telex No. : 22249 T W N KIN "TW N K IN " Taipei 715-2848 »713-0682 Cable Address Telephones L-51 T1 3/4 5mm ROUND LED LAMP

resolution

Abstract: SOP022-P
Contextual Info: s • Image Signal Processor Category Type No, Process Function Package No. DPU MN8355 EDPU MN8510 CMOS Display processor unit DPU QFP084-P-1818 L72 High performance display processor unit (EDPU) QFP124-P-2828 L80 Half tone processor LSI for light-shade image 2-value conversion

L-51-55

Abstract: JBM L-51 L3504 L5161 l5150 L3500
Contextual Info: d B “M E L E C T R O N I C S IN C 20E D • 4ÖT4G7S □□□□□□? T ctiyeJMayAi.nesi . T -4 “H3> ijb e/a y Range 25 thru 500 nsec Delay Range STYLE L-51 8 pins 5 thru 1000 nsec STYLE L-35 (14-pin outline) 5 equally-spaced taps Untapped INPUT CONDITIONS

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C168 CY7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW

C1663

Abstract: ci685 7C168 CY7C169 016A6 CY7C168 c16s1 cypress jib 4096X4
Contextual Info: MbE D ssfl^bbs Doobso? a cacYP CY7C168 CY7C169 ^ L / 4- i V O â •*î ^ Features a ’c y pr e ss SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — tAA = 25 ns — tACE = lSns(7C169)

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

CY7C168-35PC

Abstract: 7C169 7C169-25 7C168 CY7C168-45DMB
Contextual Info: CY7C168 CY7C169 s? r/ SEMICONDUCTOR 4096 x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected 7C168 • CMOS for optimum speed/power • High speed — ìaa = 25 ns - t ACE = 15 ns (7C169) The CY7C168 and CY7C169 arc high-per­

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

CY7C169

Contextual Info: CY7C168 CY7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static RAM Features Functional D escription • A u to m atic pow er-dow n w hen dese­ lected 7C168 T he CY7C168 and CY7C169 are high-performance CMOS static RAM s organized as 4096 by 4 bits. Easy memory expansion

Contextual Info: CY7C168 CY7C169 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected 7C16S • CMOS for optimum speed/power • Highspeed — tAA = 25 ns — tACE = IS ns (7C169) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • CMOS for optimum speed/power • High speed — t « = IS ns • Low active power — 385 mW • Low standby power (7C168) - 8 3 mW — tACE = 10 ns (7CI69A)

CY7C

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features A u to m atic pow er-dow n w hen dese­ lected 7C168A C M O S fo r o p tim u m speed/pow er H igh speed — 15 n s t*A — 10 n s U c e (7C169A) low active pow er — 385 m W Low stan d b y pow er (7C168)

v 2164

Abstract: CY7C167A-35VC
Contextual Info: CY7C167A SEMICONDUCTOR 16,384 x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected • CMOS for optim um speed/power • High speed — 15 ns T he CY7C167A is a high-performance CMOS static RAM organized as 16,384 words by 1 bit. Easy memory expansion is

datatronic

Abstract: EL514-5 EL514-7 EL514-8 EL514-35 EL514-45 EL514-XX
Contextual Info: T DATATRONICS 2bE J> m 2 b S 1 4 flS DOOOESb T SERIES EL514 ECL 10K COMPATIBLE TRIPLE LOGIC DELAY MODULES f • • 16 Pin D IP Package » T h re e Independent Equal Delays ECL Input and O utp u t Levels » 7 0 ECL DC Fan-out Capacity Specifications: •