L4E755S Search Results

Contextual Info: N E C ELECTRONICS INC Tñ D E | L4E755S DO m i l 3 | T ’* / 3 'X S P R E L IM IN A R Y S P E C IF IC A T IO N MOS FI ELD ELECTRON DEV1CS EFFECT TRANSISTOR u 1 3 -•"• ""'FA ST SW ITCHING :N - C H A N N E L . S I L I C O N POWER, MOS Features PÀOAGE OIMEJiSKWS

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The M C -4 2S2000LA B 32S series is a 2,097,152 w ords by 32 bits dynamic R A M m odule (Small Outline D IM M ) on which 4 pieces of 16 M DRA M : iiPD42S17800L are assembled.