L427SES Search Results

T427

Abstract: NDL4201B
Contextual Info: L427SES OOEÌSl? 3 3QE D N E C EL EC TRONICS INC r-m -'ô 7 LIGHT EMITTING DIODE NDL4201B 850 n m OPTICAL FIBER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE D ESC R IP T IO N N D L4201B is an AIGaAs double heterostructure light emitting diode. It adopts a package with ball lens to achieve easy optical coupling.

mapj

Contextual Info: L427SES 3QE D N E C ELECTRONICS OOEÌSl? INC 3 r - H I -£>7 LIGHT EMITTING DIODE N D L4201 B 850 nm O P T IC A L F IB E R C O M M U N IC A TIO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201B is an AIGaAs double heterostructure light emitting diode. It adopts a package with ball lens to achieve easy optical coupling.

DTH11

Abstract: SN2 -2s4 IC-8371 UD73 BEL 548 TRANSISTOR BTS 5002 5.1 around circlet diagram NEC disk controller 75336GC uPD75P338 DIODE s3l
Contextual Info: NEC USER’S MANUAL Ml 4 -B IT SING LE-CHIP MICROCOMPUTER a P D 7 5 3 3 B //PD75P338 • b l427SES 0 [ H 4 f l 4 4 bflT ■ NEC Corporation 1991 This Material Copyrighted By Its Respective Manufacturer . _L The information in this document is subject to change without notice.

Contextual Info: N EC ELECTRONICS INC b?E D • L427SES DD3^31S 321 HINECE JJPD78356 Family ftiPD78355/356/P356 NEC Electronics Inc. 16-/8-Bit, K-Series Microcontrollers W ith A/D Converter and Convolution Capability September 1993

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Rambus RDRAM ASIC

Abstract: RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

d78310

Abstract: D78312 d78p312a d78312a D78310A iPD78312A MANUAL ANDO AF-9704 EPROM PROGRAMMER pD78312 nec 78312 a PD78312A
Contextual Info: D ATA S H E E T MOS INTEGRATED CIRCUIT jüPD78310A A , 78312AIA) 16/8 BIT SINGLE-CHIP M ICROCOM PUTER The^PD78312A(A) is a CMOS 16/8-bit microcomputer. It contains a high-performance 16-bit CPU, enabling highly advanced internal arithmetic/logical operations. Up to 56K bytes of external memory can be added.

upd7220

Contextual Info: CHAPTER 5. 1 HOST INTERFACE 1.1 AGDC INITIALIZATION CONTROL The AGDC must be reset upon power-up. Refer to the next section for details of the resetting procedure. After the AGDC has been reset: Preprocessor and drawing-processor . Idling state (ready to accept commands)

IC-3317

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /iPD78P048A is a product in the ¿¿PD78044A subseries within the 78K/0 series, in which the on-chip mask ROM of the ¿¿PD78042A, 78043A, 78044A, and 78045A is replaced with one-time PROM or EPROM.

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

m524

Abstract: LTM-185 AT01
Contextual Info: CHAPTER 1 OUTLINE /iPD78064 Subseries 1.1 O Features On-chip high-capacity ROM and RAM Type Part N u m b e r'\^ Note Data Memory Program Memory (ROM) Internal High-Speed RAM fiPD78062 16 Kbytes 512 bytes ;iPD78063 24 Kbytes 1024 bytes ¿1PD78064 32 Kbytes

Contextual Info: 1 h - . u n ; - 1 >1 o ^ il ; , I ' -, h 2 . 2 ^ P a p, e il il 2 PRELIMINARY DATA SHEET NEC / BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2746T, 2747T, 2748T 3 V BIAS SILICON MMIC AMPLIFIRES FOR 900 MHz BAND MOBILE TELEPHONE FEATURES • L o w v o lta g e o p e ra tio n - S in g le s u p p ly v o lta g e 3 .0 V T Y P . m in im u m o p e ra tin g v o lta g e 1.8 V

Contextual Info: CHAPTER 5 1 Digital I/O PERI PHERAL Ports The uPD75238 contains T he uPD75238 empl oy s I/O ports All data the ports 8-bit enabled Fig. 5- 1 are m app ed memory I/O of and as HARDWARE FUNCTIONS the to data uPD75238, bit I/O ports, port I / O. This m ea ns

mips r4000 pin diagram

Contextual Info: CHAPTER 1 GENERAL The jiP D 30400 also called V r4000PC and the /iPD30410 (also called V r4400PC) are part of N E C ’s V r S e rie s of R ISC (Reduced Instruction Set Computer) microprocessors. They are powerful 64-bit m icroprocessors that use the R ISC architecture developed by M IPS Technologies, Inc.

PD481850GF

Abstract: D481850
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD 481850 8M-bit Synchronous GRAM Description The iiPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function

PD42S18160

Abstract: ic321 b4H7525
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¿PD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The /iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).

I1244

Abstract: D42S18165 LH 446
Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page

Contextual Info: PRELIMINARY DATA SHEET WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS FUNCTIONAL BLOCK DIAGRAM FEATURES • UPC2766GR BR O A DBA ND O PERATIO N R F & LO D C to 1 G H z IF IQ D C to 1 00 M H z • 20] lout W ID EBAN D IQ PHASE AND A M PLITU D E M ATCHING

OB2201

Abstract: T1D22 PD4217805
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /; P D 4 2 S / 1 7 8 0 5 , 4 2 1 7 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D e s c rip tio n T h e /¿PD 42S17 8 0 5 ,4 2 1 7 8 0 5 a re 2 ,0 9 7 ,1 5 2 w o rd s by 8 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r p a g e m o de .

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-422000FB72 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO D e s c rip tio n T h e M C -4 2 2 0 0 0 F B 7 2 is a 2 ,0 9 7 ,1 5 2 w o rd s by 7 2 b its d y n a m ic R A M m o d u le o n w h ic h 9 p ie c e s o f 16 M D R A M :

Contextual Info: PRELIM INARY DATA S H E E T MOS INTEGRATED CIRCUIT >IEC /J P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The /^ D 4 2S 42 1 0,424210 are 262 144 words by 16 bits dynamic CM O S RAMs with optional

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT /tP D 7 8 4 2 1 4 Y , 7 8 4 2 1 5 Y , 7 8 4 2 1 6 Y 16/8-BIT SINGLE-CHIP MICROCONTROLLERS T h e /iP D 784 216Y is based on the /¿PD784216 with an l2C bus control function appended, and is ideal for applications in audio-visual.

ipc8109

Abstract: IPC8109T
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCU ITS /¿P C 8 1 0 6 T , /IP C 8 1 0 9 T 1.9 GHz UPCONVERTER ICs FOR CELLULAR AND CORDLESS TELEPHONES The juPC8106T and /iPC8109T are silicon monolithic integrated circuits designed as upconverter series for