L4120 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L4120 Preliminary CMOS IC 40V/1.2A INTEGRATED POWER LED DRIVER „ 1 DESCRIPTION The UTC L4120 is a continuous conduction mode inductive step-down converter, designed for driving single or multiple series connected LEDs. Using a few external components.

Contextual Info: FCI Semiconductor Preliminary Data Sheet T V S -L 4 1 S 6 N 6 S SMD Transient Voltage Suppressor 6.8V to 200 V_ Jun-93 Electrical Description Mechanical Dimensions MM Features O 400 Watt Peak Power Protection O Excellent Clamping Capability

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC. SGL41-20 thru SGL41-60 SCHOTTKY BARRIER RECTIFIERS VOLTAGE • 20 TO 60 Volts CURRENT - 1.0 Ampere FEATURES MECHANICAL DATA • Plastic Package carries Underwriters Laboratory Flam m ability C lassification 9 4 V -0 Case: Molded Plastic

Contextual Info: 400 WATT MELF SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS M A X IM U M BREAKDOW N VOLTAGE M A X IM U M M A X IM U M M A X IM U M 400 W REVERSE C LA M P IN G STANDPEAK REVERSE VOLTAGE IS PART N U m r E r VOLTAGE w m m m v ,* V, V o lts ) (V o lts ) 1. mA

L46R

Abstract: l468 FCI3216-Series 47nk
Contextual Info: FERRITE CHIP INDUCTORS L4 SERIES 1. PART NO. EXPRESSION : L4-47NK-10 a Series code (a) (b) Inductance code : 47N = 0.047uH (b) (c) (d) (d) 10 : Lead Free (c) Tolerance code : K = ±10%, M = ±20% 2. CONFIGURATION & DIMENSIONS : A D L H G B C PCB Pattern

smd 748 36A

Abstract: l41 59 ota ca 3080 L41-10 L41-10A L41-11 L41-11A L41-12 L41-22
Contextual Info: FCI TVS-L41 SeHeS Semiconductor Preliminary Data Sheet SMD Transient Voltage Suppressor 6.8V to 2 0 0 V [ Electrical Description jun -93 Mechanical Dimensions M M 4.06/4.60 T 3.30/3.90 u L_ L— 5 .1 0 /5 .5 8 — J Load .1 1/.30 1.65/2.19 H H " C 'T C A "

Contextual Info: m Scottsdale, A Z m Micmsemi M TGL41-6.8 THRU TGL41-200CA Progress P owered b y Technology 8700 E. Thomas Road Scottsdale, AZ 85252 Phone: 602 941-6300 Fax: (602)947-1503 Features • Economical Series For 500 Watt Surface Mount Transient Voltage Suppressor

R4571

Abstract: ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-200
Contextual Info: ~ñ? GENL INSTR/ POWER m ] | 3 0 ^ 0 13 7 o o o a t.a i T-U 3 f m3 -100 THRU ZGL41^200 GENERAL INSTRUMENT VOLTAGE RANGE 100-200 Volts POWER RATING 1.0 Watt SO LD E R A ete EN DS FEA TU R ES • For surface mounted applications • Plastic package has Underwriters Laboratory

NSL-9122

Contextual Info: TO-18 PHOTOCONDUCTiVE CELLS f I MURES • S i x Photoconductive Materials • Power Dissipation @ 25°C 5 0 m W —H erm etically Sealed 5 0 m W - Plastic Encapsulated • Resistance Tolerance: t 40% @ 1 Ftc - 3 3 - 1 / 3 % @ 2 Ftc • Tem perature Range:

u 620 tg

Abstract: l4147
Contextual Info: TGL41-6.8 THRU TGL41-200A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Voltage - 6.8 to 200 Volts 400 Watt Peak Pulse Power FEATURES ♦ For surface mounted applications DO-213AB ♦ Plastic material used carries Underwriters Labo­ ratory Flammability Classifications 94V-0

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

TGL41

Abstract: TGL41-10 TGL41-170CA TGL41-200CA TGL41-6
Contextual Info: TGL41-6.8 thru TGL41-200CA I n ter n a tio n a l S e m ic o n d u c to r , I n c . TR AN SIEN T VO LTAG E SUPPRESSO RS SURFACE M OUNT 5.5 to 171 VOLTS 400 WATT PEAK POWER -G - 1.0 WATT STEADY STATE —G1—fr S i T MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 ° C am bient unless otherwise specified

HERA86G

Contextual Info: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95

IMPATT

Abstract: L4142
Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE IMPATT DIODES Gallium Arsenide Im patt Diodes are available as flat profile, high low profile and low high low profile devices. These term s describe the doping profile in the active region o f the device. For high low and low high low profiles the avalanche region is more closely confined in the region o f peak electric