L4 TAM Search Results

L4981A-L4981B

Abstract: L4981 PFC dip 16 pin15 vcc st microelectronics MOSFET 31N
Contextual Info: SGS-THOMSON 5 7 . L4 9 8 1 A L4 9 8 1 B m POWER FACTOR CORRECTOR ADVANC E DATA • ■ ■ . ■ . ■ . ■ ■ ■ CONTROL BOOST PWM UP TO 0.99P.F. LIMIT LINE CURRENT DISTORTION TO < 5% UNIVERSAL INPUT MAINS FEED FORWARD LINE AND LOAD REGULA­ TION AVERAGE CURRENT MODE PWM FOR

philips 3f3 ferrite

Abstract: AN890 variac used as a battery charger
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

philips 3f3 ferrite

Abstract: AN890 transistor KT 816 dz 300 AN-890
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

SOD-110

Abstract: BAT254 smd schottky diode marking 72 Diode smd code 805 MCC SMD DIODE SMD MARKING 541 DIODE str f 6707 MAR 733
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 handbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION

dolphin

Abstract: x325 15233 BATWING
Contextual Info: Dolphin Street Lighting Series SL-Dolphin/100240AC CNS Features - L4 Light source: High Power LED Comply with CNS 15233 Level 1 standard NO UV or IR light radiation Special batwing and asymmetrical light patterns CRI typical 70 Optimized heat management system

ts 4141

Abstract: BAS521
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS

ts 4141

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS

100-240AC

Contextual Info: Sylph Street Lighting Series SL-Sylph/100240AC CNS Features - B Type - L4 Light source: High Power LED Comply with CNS 15233 Level 1 standard NO UV or IR light radiation Special batwing and asymmetrical light patterns. CRI typical 70 Optimized heat management system

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

BFU309

Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections

S3C marking

Contextual Info: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.

Contextual Info: Dolphin Street Lighting Series SL-Dolphin/100240AC CNS Features 1 1 1 1 1 1 1 1 1 1 1 1 1 1 - L4 Light source: High Power LED Comply with CNS 15233 Level 1 standard NO UV or IR light radiation Special batwing and asymmetrical light patterns CRI typical 70

Contextual Info: Sylph Street Lighting Series SL-Sylph/100240AC CNS Features 1 1 1 1 1 1 1 1 1 1 1 1 1 1 - B Type - L4 Light source: High Power LED Comply with CNS 15233 Level 1 standard NO UV or IR light radiation Special batwing and asymmetrical light patterns. CRI typical 70

MS8222

Abstract: 4-digit counter car regulator PCF1175C PCF1175CT PCF1175CU U-50 LCD 4digit 4.5 digit lcd MS822
Contextual Info: Philips Semiconductors M b b 5 3 I1 5 L4 D 0 6 5 [Ì CÌ7 M ^7 M S IC 3 Product specification PCF1175C 4-digit duplex LCD car clock mm~ l N A P C /P H IL IP S b4E S EM ICOND D FEATURES GENERAL DESCRIPTION • Internal voltage regulator is electrically programmable

Contextual Info: IEC P o w e r I nl ets EN60 320 BS4491 Standard Sheet C l4 Class I Cold Condition 5.6 49.8 -» 4 Holes 03.45 8.7 40.00 CRS 30.253& fO I m I R5.9 Max 1*2 Holes 03.4 Panel Fixing Detail 3.2 20.5 40.00 cn Dd O 2 Holes 03.4 Holes 01.7 on 7.00 CRS P.C.B. Fixing Detail

KSS 213B

Abstract: 28FZ
Contextual Info: r = * 7 S G S - T H O M S O N li. [¡» IM IIL I » « L4 9 5 3 K MULTIFUNCTION VOLTAGE REGULATOR FOR CAR RADIO PRELIM IN ARY DATA • 3 OUTPUTS: 8.25V 500mA ; 5V (1A); 5 V (100mA) STANDBY . OUT1 (8.25V) AND OUT2 (5V) WITH INDE­ PENDENT ENABLE CONTROL FOR STAND­

DIODE 1N5822

Abstract: marking RAV SOD84A 1N5821 diode schottky 1N5822 n5822 1N58 1N5820 1N5822 diode Philips 370
Contextual Info: Philips Semiconductors M bfc.5 3 ^ 3 1 □ □ E b c1 3 L4 • APX Controlled avalanche Schottky barrier d iod es 1N5820ID/21ID/22ID n D E S C R IP T IO N Schottky barrier d io d es in herm etically se a led S O D 8 4 A Implosion D iode ID envelope, intended for use in low output

obd2

Contextual Info: HEF4557B LSI 1-to-64 BIT VARIABLE LENGTH SHIFT REGISTER The HEF4557B is a static clocked serial shift register whose length may be programmed to be any number of bits between 1 and 64. The number of bits selected is equal to the sum of the subscripts of the enabled length control inputs L i, L2, L4, Lg, L-|g and L32 plus one. Serial data may be selected

4029

Abstract: 4029BD ic 4029 4029 IC 4029 Counter low current 4029 cmos 4029BE 4001br ic CMOS 4029B
Contextual Info: S G S - T H O N S O N D7C D I 7=15^237 0 0 m 7 0 l4 3 I C O S/M O S f f INTEGRATED CIRCUIT *k IV ; — h c c /h c f « 7929225 S G S SEMICONDUCTOR CORP PR ESET T A BLE UP/DOWN COUNTER B IN A R Y OR BCD-DECADE • MEDIUM SPEED O PERATIO N - 8 MHz TYP. @ Cu= 50 pF AND V DD-VSS= 10V

ic 4029

Abstract: 4029 ic CMOS 4029B application 4029 4029 IC 4029B 4029 counter 40298 4029 Counter low current 4029 cmos
Contextual Info: S G S-THONSON D7C D I 7=15^237 0 0 m 7 0 l4 3 I C O S / M O S f f — INTEGRATED CIRCUIT *k IV ; h c c /h c f « 7 9 2 9 2 2 5 S G S S E M I C O N D U C T O R C ORP PR ESET T A BLE UP/DOWN COUNTER B IN A R Y OR BCD-DECADE • M ED IU M S P E E D O P E R A T IO N - 8 MHz T Y P . @ C u= 50 pF A N D V DD-VSS= 10V

CD2003GP

Abstract: cd2003 cd2003g S0P16 CD2003Gp/gb cd200 j7088 sumida FM H7 RF S25O
Contextual Info: CD2OO3GP/GB Be l. CD2003GP/GB 7Ü Î^TJIIMiJite^T^ÿL^ïiii&o AM/FM ißtM L Ä #^cinT : ÍSbJÍJÍ^ I^tiÍÍIÉ'Ü • T O £N gcFM IFI\ AMIFT , F M Ä i s S I • F M Ä N üO T tÄ • • Vcc= 1.8 ~7V Tamb= 25°C DIP 16 / S0P16 2. 2.1 ^Beffla 14> ©

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range

MARKING l7

Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA

MARKING l7

Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Contextual Info: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range