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    L3 PACKAGE Search Results

    L3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1R306PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    XPH2R106NC
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Datasheet

    L3 PACKAGE Datasheets (1)

    WSI
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    L3 Package
    		WSI 32-Pin Ceramic Leaded Chip Carrier (CLDCC) - CERQUAD (Package Type L) Original PDF 13.75KB 1

    L3 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    250945

    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache


    Original     		250945 PDF

    IF110

    Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2+8smd diode code g6smd diode g6control of starter-generatormarking g3s3 marking diodesmd diode code g3smd diode code g4smd l2 diode PDF

    80543KC

    Abstract: 250945 06191
    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.60 GHz with 9MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 4MB L3 Cache


    Original     		80543kc25094506191 PDF

    smd diode g6

    Abstract: marking G3 IF110 GMM3x60-015X1
    Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x1if110id1103x60-015x1+2smd diode g6marking g3 PDF

    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2 PDF

    DIODE marking S6 57

    Contextual Info: MTI 145WX100GD Three phase full Bridge VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW with Trench MOSFETs in DCB-isolated high-current package Part number MTI145WX100GD L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G2 G4 G6 S2 S4 S6 L1- L2- L3+ L3 L3- Features / Advantages:


    Original     		145wx100gdmti145wx100gd20140821adiode marking s6 57 PDF

    SMA MARKING L09

    Abstract: a006 ae02 marking b09 0287 D081 TCO marking a004 TB D83 diode A003 ITP700 Intel Itanium
    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache


    Original     		sma marking l09a006ae02 markingb09 0287+6d081 tcomarking a004tb d83 diodea003itp700intel itanium PDF

    DIODE marking S6 57

    Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
    Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x1if110id1103x60-015x1+9diode marking s6 57diode marking s4 57smd diode code s1 96diode marking s6 96smd diode .s6 22smd diode s4 96smd diode g6control of starter-generators4 diode PDF

    Diode smd s6 95

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1diode smd s6 95 PDF

    Contextual Info: GMM 3x100-01X1 VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1 PDF

    Contextual Info: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055x2 PDF

    Contextual Info: GMM 3x180-004X2 VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


    Original     		3x180-004x2id110if11020110307b PDF

    DIODE S6 marking code

    Abstract: smd diode g6 Diode smd s6 95 marking G3 3x100-01X1 smd diode code S5
    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1diode s6 marking codesmd diode g6diode smd s6 95+2marking g3smd diode code s5 PDF

    75WX100GD

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x175wx100gd PDF

    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055x2 PDF

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1 PDF

    MTI90WX75GD

    Abstract: DIODE marking VU smd diode code g6 vu marking code SMD MARKING DIODE VU
    Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x120-0075x2mti90wx75gddiode marking vusmd diode code g6+2vu marking codesmd marking diode vu PDF

    MTI150WX40GD

    Abstract: ID110 SMD MARKING g3
    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions


    Original     		3x180-004x2id110if110lev200+320110307bmti150wx40gdsmd marking g3 PDF

    Contextual Info: GMM 3x120-0075X2 VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x120-0075x2 PDF

    SMD mosfet MARKING code TC

    Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2+9smd mosfet marking code tcsmd diode g6smd marking code s4diode l2 smdsmd diode code g3smd diode code g6smd diode marking code l2control of starter-generatordiode marking s6 57 PDF

    Contextual Info: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions


    Original     		gmm3x60-015x2id110if11020120618a PDF

    smd diode g6

    Abstract: 3x120-0075X2 marking G3
    Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x120-0075x2smd diode g6marking g3 PDF

    diode marking L3

    Abstract: marking L2 diode smd diode S6 DIODE S4 53 marking G5 MOSFET SMD mosfet MARKING code TC smd diode g6 smd diode mj 19 S3 marking DIODE IF110
    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x180-004x2if110id110diode marking l3+8marking l2 diodesmd diode s6diode s4 53marking g5 mosfetsmd mosfet marking code tcsmd diode g6smd diode mj 19s3 marking diode PDF

    Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x120-0075x2 PDF