L2K DIODES Search Results

Contextual Info: I_CDIL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. v 2T a t lZT min nom (V) rZT at Ijjj max max (Ohm) ‘zT rZK a t l2K max (mA) (Ohm) *ZK (mA) Temp. Coeff. ot Zener Voltage typ (%/°C)

Contextual Info: DO-35 Professional Grade Zener Diodes 400 mW Electrical C haracteristics (At Ta=25°C, U nless Otherw ise Specified) Type No. rzr at l^ Vzr at ^ZT * at l2K !ZK Temp. Coeff. of Zener Voltage typ (%/°C) (V) max (Ohm) (mA) max (Ohm) 1N957 6.8 4.5 18.5 700

1N52518

Abstract: FZK 105 1N52568 fzk 101 FZK 111 1N52548 1N5251B 1N5252B 1N5253B 1N5254B
Contextual Info: IL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. Vrr at Izr* nom (V) rZT at 'ZT* rZK max (Ohm) (mA) 1N5251B 22 29 5.6 1N5252B 24 33 1N5253B •25 1N5254B 'zK at l2K \-n max (Ohm) . (mA) Temp.

Contextual Info: IL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. Vzr rZT a t l ZT* at l ^ nom (V) max (Ohm) (mA) 'z T * rZK 'zk at l2K 1N5251B 22 29 5.6 1N5252B 24 33 1N5253B •25 1N5254B max (Ohm) . (mA)

1N52398

Abstract: 1n52488 1N52318 1N52428 zener 1N52378 1N52368 1N52278 diode 1N52508 1N52478 1N52508
Contextual Info: DO-35 Standard Zendr Diodes 500 mW - Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. fZT at l^* at 'zT* fZK at l2K \„ Temp. Coeff. of Zener Voltage (%/°C) Ta 25°C max (MA) V R 'zM *ZSM* vF @ lF Pd (mA) (W) Ta 75 °C max

Contextual Info: fl DO-41 Professional Grade Zener Diodes 1 W Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. ^ZT at min nom max (V) rZT *ZT max (Ohm) a t lZT rZK <ZK (mA) max (Ohm) (mA) a t l2K Temp. Coeff. lR at VR Ta Zener Voltage 25°C max

Contextual Info: DO-41 PROFESSIONAL GRADE ZENER DIODES 1 W Electrical Type No. min C h aracte ristics (At Ta=25°C, U n le ss O therw ise Specified ) 'zT V ZT rZT at lCT at Ij j at l2K max max nom max rZK 'ZK T C emp' oeff. Of Ir at V R Vr !ZM *ZSM Pd Vp Ip Ta ^ener ^oltaga

BZV85C5V1

Abstract: BZV85C5V6 BZV85C30 BZV85C3V3 BZV85C2V7 BZV85C3V6 BZV85C3V9 BZV85C4V3 BZV85C4V7 BZV85C6V2
Contextual Info: DO*41 Zener Diodes — —- - - — -: . Electrical Characteristics At Ta=25°C, Unless Otherwise Specified Type No. max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) ^ZT f ZT a t 'z r a tlz r min norm max (V)

ADE-208-137

Abstract: 1n5223b
Contextual Info: ADE-208-137 Z 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation Preliminary Rev. 0 Aug. 1993 HITACHI Features Outline • G lass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener

IN4748A

Abstract: in4738 1H47S 1H4747A 1H4735A 1H4749A D000032 IT9010 200a liu 1N4732A
Contextual Info: INTERNATIONAL SEMICOND 4TE T0DQ37Ö □□□□032 1Tb « I S E M D International Semiconductor, Inc1 W silicon zener diodes M ECHANICAL CH A RACTERISTICS FEATURES MAXIMUM RATINGS • Zener voltage 3.3 to 100 V • Hermetically sealed glass package Junction Temperature: -65°C to +200°C

l2k Diodes

Abstract: zener diode 1N961 1N4733 zener diode 1N52 diode zener 182 lN5349 zener diode 182 1N751 1N752 1N754
Contextual Info: SEMICONDUCTORS INC DTE D | 013bb5D □□□□2LIÖ 4 | °? Zener Diodes. 0,4 W. 1N751 Series. 400 m W Glass Zener Diodes in DO-35 Package (TA = 25 °C . Outline : 5 Nominal Zener Voltage V ,a t l2I Type Maximum Zener Impedance at l2T in) 17 11 7 (V) 5 .1

IN752 zener diode

Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
Contextual Info: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA

Contextual Info: 0.5A Fully Protected Dual H-Bridge Driver Description The CS-3710 is a smart dual 0.5A Hbridge driver used in microprocessor controlled stepper motor systems. The CS-3710 provides bidirectional current using two independent 0.5A H-bridge drivers. On chip commutation diodes

diode IN4000

Abstract: 1N29B IN4000 IN4000 silicon diode Zener diode ZTK in2970 IN4000 series IN4000 diode IN3993 IN2987
Contextual Info: niCROSEni coRP 51E D • bll5abS Microsemi Corp. f Ti* atme expem SA STA CA SCOTTSDALE, A Z F o r m o re in fo rm a l,o n call: 602 941-6.10» 0001S5T 0 0b rise ■ 1NZ970 thru 1N3015B and 1N 3993 thru 1 N 4000A FEA TU RES • ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ± 5 % , ± 1 0 %

TLP626

Abstract: TA-39
Contextual Info: TOSHIBA TLP626,TLP626-2/TLP626-4 TOSHIBA PHOTOCOUPLER TI • m GaAs IRED & PHOTO-TRANSISTOR TI PK7R-? g U TI PR7R-A■ ■ g PROGRAMMABLE CONTROLLERS AC / DC-INPUT MODULE TELECOMMUNICATION U nit in mm 4 TLP626 3 51 [r3 The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared

LN 358 n

Abstract: 1N1000 LN 358 IC si9500 1G97
Contextual Info: 1N 2 9 7 0 thru 1N 3015B and 1N 3993 thru 1 N 400 0A Microsemi Corp. f The áuxte experts S -l \ T i -1 V 'l. C'A sí o n s n .4 1 r. For more a in t o : I iia h o r i / call: 602 941-6300 m FE A T U R E S • ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ± 5 % , ± 10% and ± 20% (See Note 1)

Z9M y

Abstract: 1N4460D 1N4465 "Z9m JANTX 1N4469 1N4460 z9m g "Z9m" 1N4460C 1N4496
Contextual Info: INCH-POUNO The documentation and process conversion measures necessary to comply with this shall be completed by 16 Aug 94. MIL-S-19500/4Q6C 16 Hay 1994 SUPERSEDING MIL-S-19500/406B 19 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, D100E, SILICON, VOLTAGE REGULATOR

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered