L2B LP LP Search Results

Contextual Info: 2 ö l2b 72 DOQMböB bT7 Dialîght Surface Mount LED, Bicolor TAPING SPECIFICATIONS rear side of tape PART NO. 597-7701-2xx LED COLOR Red/Green [ 079] |-— [.1S7] •<h Benefits • Compatible with automatic placement equipment • Compatible with infrared

construction of varactor diode

Contextual Info: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

mc12149

Contextual Info: Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

ML12149-5P

Abstract: ML12210 MA393 MC12149 MC12149D ML12149 LT 725
Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

construction of varactor diode

Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

MA393

Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

ML12149-5P

Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
Contextual Info: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO

MA393

Abstract: MC12147 MC12147D MC12149 MC12202
Contextual Info: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

k1 M 1208 Q switch

Abstract: mc12149 csr rf construction of varactor diode MA393 MC12149D MC12149SD MC12202 Nippon capacitors
Contextual Info: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION ARCHIVE INFORMATION

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

Qb 742

Abstract: MA393 MC12149 MC12149D MC12202
Contextual Info: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

construction of varactor diode

Abstract: varactor diode high frequency MA393 MC12147 MC12147D MC12202
Contextual Info: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION Freescale Semiconductor, Inc.

construction of varactor diode

Abstract: MA393 MC12147 MC12147D MC12147SD MC12202 Nippon capacitors
Contextual Info: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •

MC12149

Abstract: MA393 MC12149D MC12202
Contextual Info: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

P06V

Abstract: D024 KSK161
Contextual Info: KSK161 SILICON N-CHANNEL JUNCTION FET _ i- FM TUNER VHF AMPLIFIER • NF - 2.S dB TYP •|Yra|- 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.-25 °C) Characteristic Symbol Gate-Drain Voltage Gate Current Power Dissipation Junction Temperature

philips tea 1091

Abstract: TEA 1091 TEA1112AT TEA1112 TEA1112A TEA1112T
Contextual Info: Philips Semiconductors Preliminary specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The TEA1112; TEA1112A are bipolar integrated circuits

T3D 67 diode

Abstract: T3D 77 diode 74ABT821 T3D 46 diode T3D DIODE clamp SA00223 t3d 62 diode
Contextual Info: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type

ma7805

Abstract: 2SC631 2SC632 2N3406 2SC634 FV918 2N1082 a608 NS3039 2SC402A
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

T3D DIODE clamp

Abstract: T3D 79 diode T3D DIODE t3d 62 diode Diode T3D 54 T3D 67 diode T3D 54 DIODE Diode T3D 08 T3D 46 diode T3D 45 diode
Contextual Info: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type