L10 TF Search Results

56-PIN

Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Contextual Info: LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide

56-PIN

Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Contextual Info: SHARP LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual W ork flash memory • Scalable Command Set (SCS) with Smart 3 technology is a high-density, low-cost, • High performance read access time

LH28F160S3NS-L10

Abstract: LHF16KA1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright

LH28F160S3HNS-L10

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10 Flash Memory 16M 2Mx8/1Mx16 (Model No.: LHF16KAS) Spec No.: EL131052 Issue Date: February 5, 2001 sharp LHF16KAS ●Handle this document carefully for it contains material protected by international copyright

LH28F160S3HNS-L10

Contextual Info: Date 16M x8/x16 Flash Memory LH28F160S3HNS-L10 Feb. 5. 2001 LHF16KAS ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express

DO14

Abstract: LH28F160S3NS-L10 LHF16KA1
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA1) Spec No.: EL128039 Issue Date: August 22, 2000 SHARP LHFlGKAl l Handle this document carefully for it contains material protected by international copyright

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA1) Spec No.: EL128039 Issue Date: August 22, 2000 SHARP LHFlGKAl l Handle this document carefully for it contains material protected by international copyright

Contextual Info: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-MBIT 2MBx8/1MBx16 Smart 3 Flash MEMORY Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP Common Flash Interface (CFI) — Universal & Upgradable Interface Scalable Command Set (SCS) High Speed Write Performance

phase controller L120

Abstract: AMD flash ETOX
Contextual Info: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-M BIT 2MBX8/1 MBx16 Sm art 3 Flash MEMORY • Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP User-Configurable x8 or x16 Operation ■ Common Flash interface (CFI) — Universal & Upgradable Interface

10DN

Abstract: 27110 2150C REP50n
Contextual Info: DATE 1 -5 -9 8 REVISIONS E .C .N . □RAWING NUM BER REV Q E D -P T -3 0 4 R 2 A REV « 0 B R D R ./ A ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 'C PARAMETER e .8 oc o.iio] E.80C0.L10] SYMBOL TEST CONDITION MIN •nrp MAX 1000 UNIT nA COLLECTOR DARK CURRENT

Contextual Info: PRELIMINARY DATA SHEET TRANSCEIVER MODULE NL1000 3.3 V, SMALL PACKAGE IrDA COMPLIANT TRANSCEIVER MODULE DATA RATE: 2.4 k to 115.2 kbps DESCRIPTION T h e N L10 00 is a sm all pa ckag e tra n s c e iv e r m odule for IrDA V er.1 .0 . T h is m odule in co rp o ra te s an in fra re d Rays

1045y

Abstract: 1046h 1044G 1052Y 1046Y gl 1046g 1051G 1043H GL-104 1042H
Contextual Info: COLLINS ELECTRONICS CORP 3ME D 2233170 DOOaOOb b W?=^r2L Led Indicator Lamps U LED IN D IC A TO R LA M PS 1 2x2 + a » 11 11 r -mu j 'l I1 11 - 2 x 4 .5 1 mm 2 .5 x 5 i Tf •■ 2 .5 X 7 .5 ia J1 A 2 x 2 .5 Ì T 2x5 i j I1 7 3 x 4 .5 C o lo r Em itting m a te ria l

KM41C4000/L

Abstract: KM41C4000
Contextual Info: SAMSUNG ELECTRONICS INC M 2E D 7^4142 QQ1D1S7 b ISM6K CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tflC K M 41C 4000/L- 8 80ns 20ns 150ns K M 41C 4000/L-10 100ns 25ns

DIN 16901 130 plastic

Abstract: DIN 16901 150 DIN 16901 130 A6211 V42254-A6109-L1 DIN 16901 110 2G109 ng 52 5-1393561-6 a6210
Contextual Info: 2 c/i tf> •_ Xi « O O Ç It pc,—-C6'C ÌA -c W» £o° -55 «.%-o.gI IeS ISc«« S «« t C Ï o <tB 2 Ï * • £«uo c » w.£ s re u^< -Cû CEr — > .5 D C <q ^ JjT £ O -O w w C M Û ft « #0« W»Ä fflü t WÈ Cy ? «» 5s S C 3? ".S OS ^8g«o.2° «Oc

TS PQ4 24

Abstract: TM4C129LNCZAD
Contextual Info: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having

Contextual Info: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not

Contextual Info: Cooling aggregates with axial fan Hollow-fin cooling aggregates - g e o m e try o f h o llo w fin o p im isin g the a ir flo w - p a rtic u la rly effective heat dissipation - c o m p a c t construction - s e m ic o n d u c to r m o u n tin g surface fo r m illed fla t

S105H

Abstract: h13f
Contextual Info: Thermal Cut-Off 250 Vac L50N 1 5/10/20/25A L10N 1) 3/8A L50NG900 max. 184 °C) L10N L50NG902 (max. 184°C) L10N Thermal Cut-Off HDMV, HDMH 15A 2) HDMV HDMH L50NG913 (max. 240°C) L10NG911 Plastic or metal housing temperature rating (°C) type Tf Th Tm Tm

D100D

Abstract: C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113
Contextual Info: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in

D100D

Abstract: k1113 K1112 k1011 C1213A C1314A k0305 transistor c1013 k0308 K0216
Contextual Info: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in

TFB45A12

Contextual Info: SEPA BRUSHLESS FAN TFB45A05, TFB45A12 Pb HIGH RELIABILITY FAN SHAPE AND DIMENSION 42 18.5 2 Pa 1.5 19 1.5 32.5 4 18 1.5 9 90 30 20 40 60 80 100 310 +/-15 TFB45A05 3 25.5 23 +/-0.3 18 +/-0.3 44.5 60 +/-0.8 32 26.5 TFB45A12 6 +/-0.3 l/min 43.5 +/-0.3 mmH O

k2225 transistor

Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
Contextual Info: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given

transistor c1013

Abstract: K0107 transistor c1014 C1013 transistor k0207 transistor k0307 K0915 transistor K0816 8600E spice germanium diode
Contextual Info: AND8077/D GigaComm SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform

transistors k2628

Abstract: k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324
Contextual Info: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information