DD11D Search Results

Contextual Info: 6427S25 N E C D Ë J b427SES E L E C T R O N IC S DD11DD1 IN C 980 19009 D T - 3 «7-/3 1 |~ M 0S F I E L D E F F E C T T R A .V S I S T C K ELECTRON DP/ICE FAST SW IT C H IN G N - "C H A N N E L S I L I C O N POWER WOS FET PA CK A G E DIMENSIONS Features

2SC4471

Abstract: 2SC4471A PT10Y
Contextual Info: Power Transistor m bS32fl54 DD11D12 2Tfl • P N C 2 SC4471, 2SC4471A 2SC4471, 2SC4471A Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm ■ Features 4.4m ax. 10.2m ax. 5.7m ax. • High speed sw itching

cib47

Contextual Info: T2 UNITROD E CORP 9347963 » F | ciB47Tb3 DD11DÛ1 T f ” U N ITR O D E CO RP 92D 11081 POWER SCHOTTKY RECTIFIERS 32A Pk, Up to /USD136 3 0 ? USD1645S 45V FEATURES • Economical Convenient TO-247 Package • Insulated Mounting Hole • Can Be Clip Mounted

Contextual Info: HITACHI/ OPTOELECTRONICS SIE » • 44cìb50S DD11DQ2 TIM ■ H I T 4 T '3 ^ - 1 3 GN4530C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf= 3 0 0 n sty p , 800 ns max • Low on saturation voltage

Dual N-Channel JFET

Abstract: u257
Contextual Info: Dl SOLID STATE 38750Ô1 G E S O L ID DE 1 3Ö7SDÖ1 DD11DSS 01E STATE 11055 D 11257 Dual N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • g s>4500/j.s From DC to 100MHz (Ta = 25°C unless otherwise noted Gate-Drain or Qate-Source Voltage (Note 1) . - 2 5 V

Contextual Info: 1T368 SO N Y Variable Capacitance Diode Description The 1T368 is a variable capacitance diode contained in super miniature package, designed for wide band CATV. Features • Super miniature package • Small series resistance rs=0.75n max. • High capacitance ratio

Contextual Info: SSI 32F8102/8103/8104 ¿ m m Low-Power Programmable Filter s v s k m s A TDK Group/Company January 1995 DESCRIPTION FEATURES The 32F810X is a high performance, low power, digitally programmable low-pass filter for applications requiring variable-frequency filtering. The device

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

MB87077

Abstract: MB87077P MB87077PF
Contextual Info: August 1992 Edition 2.0A FUJITSU DATA SHEET M B87077 6-bit, 4-channel Electronic Volume Controller The Fujitsu MB87077 is a 6-bit, 4-channel electronic volume controller. A digital signal input controls gain every 0.5 dB step from OdB to -32dB. K has been fabricated in

m82c84a

Abstract: frequency COUNTER 25Mhz crystal INS 43DSS71 82C84A
Contextual Info: HARRIS SEMICON» SECTOR 15 h D e I 4302271 D011033 1 f g • 7 = 5 S i- / ? 82CQ4A a r r is C M O S C lock Generator Driver Features Pinouts • Generates the System Clock For CMOS or NMOS Microprocessors TOP VIEW CSYNC C 1 • Up to 25MHz Operation 18 D Vcc

DD11D01

Abstract: GN6010A
Contextual Info: HITACHI / OPTOELECTRONICS SIE D Wt 44Tb2D5 DOllGD'ì 37T « H I T 4 T -3 9 -// GN6010A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO -220A B High speed power switching Features • High speed switching tf = 150 ns typ, 350 ns max • Low on saturation voltage

Contextual Info: Whpt H E W L E T T mLEM P A C K A R D Avantek Products Surface Mount Cascadable Amplifier 1 to 2 GHz Technical Data PPA-2123 Features Description Pin Configuration • Frequency Range: 1 to 2 GHz The PPA-2123 is a multistage, lownoise, high-gain amplifier utilizing

R4000MC

Abstract: R2000 mips Siemens R2000 R4000SC R2010 mips processor R3010 mips processor MIPS R3000A mips r4000 block diagram R2000 mips processor
Contextual Info: 5 3 0 lJâ04 ODIO'îTB D5fl « L L C Introduction to the LR4000 MIPS Microprocessor Publication ID: J 1 4 0 1 5 Publication D ate: O cto b er 1, 1 9 9 1 Company: L S I LOGIC CORP This title page is provided as a service by In fo rm a tio n Handling Services and displays

Contextual Info: Features • • • • • • • Fastest Propagation Speeds in the Industry T p d f grade = 2 .5 ns, T r d ( g grade) = 2 .0 ns Maximum derating for capacitive loads 1.5ns/100 pF (F grade) and 1.1 ns/100 pF (G grade) Very low ground bounce < 0.6V @ Vcc=5.00 V, Ta=25°C

ES2602

Abstract: ES2601T unitrode Applications Note
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP » F | ci347cltJB D D l l O M l 92D 11041 High Efficiency, 30ACenter-Tap FEATURES • Very Low Forward Voltage • Very Fast S w itc h in g Sp e e d • C on venient P ackage • H igh S u rge • Low Therm al R e sista n ce

Contextual Info: / T u r m T E C H N O LO G Y _ LTC1164-6 Lo w P o w e r 8th O r d e r Pin S e le c t a b le E llip tic or L in e a r P h a s e L o w p a s s Filter F€OTUR€S DCSCRIPTIOfl • 8th Order Pin Selectable Elliptic or Bessel Filter in a 14-Pin Package

Contextual Info: Thal H E W L E T T mL'EM P A C K A R D Avantek Products Threshold Detector .1 to 6 GHz Technical Data PPD-6002 Features Description Pin Configuration • F requency Range: 0.1 to 6 GHz The PPD-6002 is a sensitive micro­ wave threshold detector which provides efficient and accurate RF

Contextual Info: L i n ^ A B _ l t c 1 2 6 4 TECHNOLOGY High Speed, Q u ad Universal Filter Building Block F€ATUR€S DCSCftlPTIOn • ■ ■ ■ ■ ■ ■ ■ The LTC1264 consists of four identical, high speed 2nd order switched-capacitor filter building blocks designed

32r4610a

Abstract: 0.0.196.48 2300R 32R2020R 32R4610AR 32R2300-4CV 32R2300-4CL 32R2300-4
Contextual Info: M m M b n s SSI 32R2300/2300R/2301/2301R 3.3V, 5V, 2, 4-Channel 2-Terminal Read/W rite Device ' A TDK G roup/C om pany December 1993 DESCRIPTION FEATURES The SSI 32R2300/2300R are BiCMOS monolithic inte­ grated circuits designed for use with two-terminal re­

Contextual Info: SSI 32F8101 Low-Power Programmable Filter ¿ ik m s iis k m s A TDK G roup/C om pany Preliminary Data January 1995 DESCRIPTION FEATURES Programmable cutoff frequency - 8.9 to 27 MHz The 32F8101 is a high performance, low power, digitally programmable low-pass filter for applications

varo semiconductor

Abstract: MT4C4001 MT4C4001J MT4C4001JDJ-6 MT4C4001JS mtc4001 MT4000
Contextual Info: MT4C4001J S 1 MEG X 4 DRAM MICRON ft stiacoNOucTOH«c- 1 MEG x 4 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and

Contextual Info: HITACHI/ LI NEA R DE VI C E S 2bE D • MMTbSDE QQllOBb S HA118070- — T'17'07-05 Video Switch with Preamplifier (1‘circuit, 2-contact) Features Ordering Information • SV single supply operation Typ« No. Packagi • 2 inputs, 2 control inputs

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) o r 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and