L-120 AB Search Results

Contextual Info: 2SD2124 L /(S) Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline DPAK 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120

TY527

Abstract: panduit 22CC37 WIT-50 t3d 18 n 308 al T3D 6 TY35/535/5354 TYTO PLM-24
Contextual Info: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H

2C25A

Contextual Info: Fuji New Semiconductor Products ~ ; u I ¡Nf ^ 1MBC03-120, 1MB03D-120 K J f ^ l G B T Features • If t H * • 7 7 h X < y ? > < 7 lZ j:Z l& X 1 ' y ? > 7 - y — 'y t 1 & S 'r X { t • M ilti, • 8 8 4 7 l i i l i l 7 7 RBSOA, SCSOA 4' E ^ • Small molded package

Contextual Info: SAHKEN ELECTRIC CO UTJ S5E , . 7„ 07„ ^ SLA4031 Silicon NPN Triple Diffused Planar Darlington •Maximum Ratings •» -Si Ta=25-c> ■* ill I f i l l f i SfcJIllli'iL VCBO 120 Collector-to-Emitter Voltage VCEO 120 V Emitter-to-Base Voltage V ebo 6 V

schiele

Abstract: schiele interbus 24 V DC PROXIMITY schiele vde 0110
Contextual Info: E031026 000727 Process modules Digital input PMI for 24 V DC inputs for 120 V AC inputs PMI 24 V DC PMI 120 V AC Input E4, E5, GND L- Input E4, E5, Common C E6, E7, GND L- E6, E7, Common C LED indicates operation LED indicates operation LEDs for the inputs

Contextual Info: ISSI IS 6 2 L V 1 2 8 1 6 L ADVANCE INFORMATION DECEMBER 1997 128K x 16 CMOS STATIC RAM FEATURES • High-speed access time: 70, 100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 |aW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: l ü l I f C EL2175C f 120 MHs Precision Current Mode Feedback A mplifler HIGH PLPFPRVASCE ANALOG . M T £ C SIRCUfTS F e a tu re s G en era l D e sc r ip tio n • 30 M il transim pedance 142 M H z - 3 dB bandw idth <AV = + 1 120 M H z - 3 dB bandw idth

Contextual Info: I S 6 2 L V 1 2 8 1 6 ' L "m 128K x 16 CMOS STATIC RAM WITH 2.5V-3.2V SUPPLY FEATURES • High-speed access time: 70,100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 jiW (typical) CMOS standby • TTL compatible interface levels

E3150

Contextual Info: ISSI IS 6 2 L V 1 2 8 1 6 L 128K x 16 CMOS STATIC RAM WITH 2.5V-3.2V SUPPLY FEATURES • High-speed access time: 70, 100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 |aW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: F-199-1 FOt-C-12 5 -0 2 -S -Q -L C m FOLC-120—0 2 -S -Q -P sam Têc F O L C -120-02-S -Q S L l jj f a c e SMT Ir 1 .V i- fc ia s s i MOLC High reliability Tiger-Eye contacts Materials: In sulator M aterial: B lack Liquid Crystal , P olym er * C ontact M aterial: BeCu

S T A 933

Abstract: 731 423-002 VARISTOr cm 8a 933
Contextual Info: > V A G M L 2 0 9 NJ LED 120 YE G M L 209 NJ LED 120 VR YE transparent transp. transp. tran sparen t transp. transp. transparent transp. transp. transparent transp. transp. 933 929-100 933 929-106 933 712-100 933 712-106 933 934-100 933 934-106 933 713-100

Contextual Info: SANKEN ELECTRIC CO LTD SSE D 7^0741 GOGIOSM ÔQT » S A K J FP812 i Absolute maximum ratings Ta = 25°C Symbol i S ym b o l VcBO -120 VCEO -120 V ebo -6 Ic -8 A hFE Ic (pulse) -12 A VcE(sat) Ib -3 A fT Pc , , Testing conditions'.: • ’FP832 •‘ ' / Unit

FG600AH

Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Contextual Info: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC

C551001

Contextual Info: 120-312 H3 S - / J / 7 TOSHIBA 1Mbit Static RAM TC551001APL-L/AFL-L /AFTL-L/ATRL-L LV Data Sheet INTEGRATED CIRCUIT TOSHIBA TOSHIBA DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA TC551001APL / AFL / AFTL / ATRL - 70L, - 85L, - 1 0L (LV) ” SILICON GATE CMOS

Contextual Info: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL

std8020

Contextual Info: REV. DIALIGHT A S S E M B L Y NO. LED COLOR 609-2112-120 RED 6 V 609-2212-120 GREEN 6 V 609-2312-120 YELLOW 6 V 609-2112-130 RED 12 V 609-2212-130 GREEN 12 V 609-2312-130 YELLOW 12 V 609-2112-140 RED 24 V 609-2212-140 GREEN 24 V 609-2312-140 YELLOW 24 V REVISIONS

Contextual Info: 2,5 MSF 2,5 MSFQ Minimodul -Stiftleiste, stehend, mit Verriegelungslasche 2,5 MSF: Lötkontakte einreihig 2,5 MSFQ: Lötkontakte doppelreihig versetzt 1. Temperaturbereich -40 °C/+120 °C1 2. Werkstoffe Kontaktträger2 Kontaktstift 3. Mechanische Daten

762T

Contextual Info: intei 5116S/L 2K x 8-BIT CMOS STATIC RAM 5116S-10 5116S-12 Unit Address Access Time ìa a 100 120 ns Chip Select Access Time (tAcs) 100 120 ns Output Enable Access Time (toE) 40 50 ns • Static Operation - No Clock/Refresh Required ■ Power Down Mode

1MB1400NN-120

Abstract: 1MB1400 t1400 icca 3100 1MBI400nn BI400N
Contextual Info: n I l A n - r •*>' T - >i F ' m ii -t'' 1I MBI 400 NP i v i D 1‘t v 'J iM r -120 i £ .\ J g d i l G B T ^ v u — \/ rN y ' J - ^ j 1MB1400NN-120 fe r n * • ¡ & x 4 - j * > 9 w / H * > •; - x j 1200V / 400A/ 1 10SS. ■ 4t # : Features "/ + > $

H-301C-1-120

Contextual Info: ITEM 1 2 Q'TY 1 2 PART NUMBER REV. PART DESCRIPTION T-1 3mm Bi-Level LED holder, 90° Mount, 120 C/L T-1 (3mm) Non-Flange LED, Super Green, Tinted H-301C-1-120 3SGT DATE DESCRIPTION A Engineering Release. APPROVED 11/18/05 M. C. Ø0.118 [Ø3.0mm]TYP. 0.094 [2.4mm]

W42C70-04P

Contextual Info: ì l l ^ iC WORKS 1U42C70 Zero Delay Buffer ADVANCE INFORMATION, JANUARY 1995 FEATURES DESCRIPTION • On chip Phase Locked Loop for dock synchronization • Synchronizes frequencies up to 120 MHz output • ±lns skew (max) between input and output clocks

IR 850nm

Abstract: 730nm HPL-H77SH1BA hpl-H77 HPL-H77AK1BA HPL-H77XX1BA led 940nm high power HPL-H77GH1BA led star 940nm 660nm
Contextual Info: SPECIFICATION FOR IR SERIES HPL- H77X X 1 B A Lens & Assembly Type : Wavelength: N : No special Work S : with Star H : IR 660nm I : IR 730nm A : Lens 25° B : Lens 45° L : Lens 120° G : Star & Lens 25° H : Star & Lens45° F : Star &Lens 120° J : IR 850nm

6MBI15L-120

Abstract: M600 30S3 T151 yi50
Contextual Info: 6MBI15L-120 15A IGBT (L SERIES) ! * » • + » : Outline Drawings IGBT MODULE ■ 4# ^ : Features High Speed Sw itching • & & * > '( • Low Saturation Voltage • W JESEW l ( M O S 4 * — h f l ! £ ) • ft* Voltage Drive Variety of Pow er Capacity Series

ge 925

Abstract: atc 17-25
Contextual Info: E R IC SSO N í PTE 10020* 120 Watts, 9 2 5 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10020 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 925 to 960 MHz. It is rated at 120 watts minimum