L QUAD ALUMINUM NITRIDE Search Results
L QUAD ALUMINUM NITRIDE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
L QUAD ALUMINUM NITRIDE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FPT-256C-C02Contextual Info: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 256 PIN CERAMIC FPT-256C-C02 256-pin ceramic QFP Lead pitch 0.50 mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.50 mm Base ceramic material Aluminum nitride FPT-256C-C02 |
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FPT-256C-C02 256-pin FPT-256C-C02) F256012SC-3-3 FPT-256C-C02 | |
FPT-256C-C03Contextual Info: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 256 PIN CERAMIC FPT-256C-C03 256-pin ceramic QFP Lead pitch 0.50 mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.50 mm Base ceramic material Aluminum nitride FPT-256C-C03 |
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FPT-256C-C03 256-pin FPT-256C-C03) F256014SC-2-3 FPT-256C-C03 | |
Aluminum nitride QFP
Abstract: 368c diode 368-pin
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FPT-368C-C01 368-pin FPT-368C-C01) F368002SC-3-3 Aluminum nitride QFP 368c diode | |
Contextual Info: QUAD L-LEADED PACKAGE 304 PIN CERAMIC FPT-304C-C02 Lead pitch 0.50mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.50mm Base ceramic material Aluminum nitride 304-pin ceramic QFP FPT-304C-C02 304-pin ceramic QFP (FPT-304C-C02) |
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FPT-304C-C02 304-pin FPT-304C-C02) F304004SC-3-3 Dimen04 | |
Aluminum nitride QFPContextual Info: QUAD L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 304 PIN CERAMIC FPT-304C-C02 304-pin ceramic QFP Lead pitch 0.50 mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.50 mm Base ceramic material Aluminum nitride FPT-304C-C02 |
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FPT-304C-C02 304-pin FPT-304C-C02) F304004SC-3-3 Aluminum nitride QFP | |
Aluminum nitride QFP
Abstract: nitride
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FPT-160C-C02 160-pin FPT-160C-C02) F160008SC-3-2 071AMIC Aluminum nitride QFP nitride | |
368-pin
Abstract: Aluminum nitride QFP
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FPT-368C-C01 368-pin FPT-368C-C01) F368002SC-3-3 Aluminum nitride QFP | |
296-0025
Abstract: Aluminum nitride QFP
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FPT-256C-C02 256-pin FPT-256C-C02) F256012SC-3-3 296-0025 Aluminum nitride QFP | |
nitrideContextual Info: QUAD FLAT L-LEADED PACKAGE 160 PIN CERAMIC FPT-160C-C04 160-pin ceramic QFP Lead pitch 0.65 mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.80 mm Base ceramic material Aluminum nitride FPT-160C-C04 160-pin ceramic QFP (FPT-160C-C04) |
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FPT-160C-C04 160-pin FPT-160C-C04) F160010SC-2-2 nitride | |
nitrideContextual Info: QUAD FLAT L-LEADED PACKAGE 256 PIN CERAMIC FPT-256C-C03 256-pin ceramic QFP Lead pitch 0.50 mm Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.50 mm Base ceramic material Aluminum nitride FPT-256C-C03 256-pin ceramic QFP (FPT-256C-C03) |
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FPT-256C-C03 256-pin FPT-256C-C03) F256014SC-2-3 nitride | |
nitride
Abstract: Aluminum nitride QFP method 208
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FPT-208C-C03 208-pin FPT-208C-C03) F208013SC-2-3 nitride Aluminum nitride QFP method 208 | |
nitride
Abstract: Aluminum nitride QFP C1995
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FPT-208C-C04 208-pin FPT-208C-C04) FFPT-208C-C04 nitride Aluminum nitride QFP C1995 | |
C451Contextual Info: S h a rris H A -5 1 0 4 /8 8 3 Low Noise, High Performance, Quad O perational Amplifier January 1989 Features D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td 8 8 3 and Is Fully Conform ant U nder the Provisions or Paragraph 1.2.1. Low noise and high performance are key w ords describing |
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100dB 100Hz 200mV 10kHz C451 | |
Contextual Info: {£ HARRIS H A -5104/883 Low N oise, High Perform ance, Quad O perational Amplifier January 1989 F eatures D escrip tio n • This Circuit is Processed in Accordance to M il-S td - Low noise and high performance are key words describing the unity gain stable H A -5104/883. This general purpose |
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200mV 10kHz | |
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OF 14 pin DIP IC 4741Contextual Info: 2 HA-4741/Q83 HARRIS January 1989 Quad Operational Amplifier Features Description • T his Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The Harris HA-4741/883, w hich contains four amplifiers on |
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HA-4741/Q83 HA-4741/883, 200mV, -200mV OF 14 pin DIP IC 4741 | |
Contextual Info: a Harris H A -5114/883 Low Noise, High Performance Operational Amplifier January 1989 Features Description • This Circuit Is Processed in Accordance to M ll-S td - Low noise and high performance are key words describing the quad, uncompensated HA-5114/883. This general |
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HA-5114/883. 60MHz 200mV -550C 10kHz | |
OF 14 pin DIP IC 4741Contextual Info: 2 HARRIS H A -4 January igsg 7 4 1 /8 8 3 Quad Operational Amplifier Features D escrip tio n • This Circuit Is Processed in Accordance to M ll-S td 883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The Harris HA-4741 /88 3, w hich contains four amplifiers on |
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HA-4741 741-ty 200nA 10kHz, 100mV 200mV, -200mV OF 14 pin DIP IC 4741 | |
a4902Contextual Info: f f l h a r r HA-4902/883 i s Precision Quad Com parator January 1989 Features D escrip tio n • This Circuit is Processed In Accordance to M ll-S td - The H A -490 2/88 3 is a monolithic, quad, precision com parator offering fast response time, low offset voltage, |
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HA-4902/883 HA-4902/883 200ns) 100mV a4902 | |
4600C
Abstract: IPS-T t23s3 5KTL
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43D5S71 0Di304fl HA-4902/883 Mll-Std-883 215ns 180ns 200ns) 100mV 4600C IPS-T t23s3 5KTL | |
Contextual Info: h a r r is H b 2 1 / 6 6 3 Quad SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed in Accordance to M il-S td883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HI-201/883 is a monolithic device comprising four in |
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td883 HI-201/883 185ns | |
t2d40
Abstract: HA-5114 5114
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HA-5114/883 Mll-Std-883 30MHz 100kV/V 250kV/V 100dB -550C 1250C 125OC t2d40 HA-5114 5114 | |
Contextual Info: MAX3032E RELIABILITY REPORT FOR MAX3032EEUE+ PLASTIC ENCAPSULATED DEVICES September 2, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Engineering Maxim Integrated Products. All rights reserved. |
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MAX3032E MAX3032EEUE+ SAM2CQ001B, RT31-2 250mA. IAM2BQ001A, | |
Contextual Info: 3 3 HARRIS H A -5 1 1 4 / 8 8 3 Low Noise, High Performance Operational Amplifier J a n u a ry 19 89 Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td - Low nolsa and high performance are key words describing the quad, uncompensated HA-5114/883. This general |
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HA-5114/883. 60MHz 100dB 100Hz 200mV -550C 10kHz | |
Contextual Info: HARRIS SENICOND SECTOR 10E D I M303271 □D133S3 R I H A -5144/883 HARRIS Quad, Ultra-Low Power Operational Amplifier T-7 9 -0 8 January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of |
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M303271 D133S3 Mll-Std883 20kV/V 75kV/V -550C 1250C 200mV -200mV |