L D SMD Search Results

Contextual Info: D E 1 WNUU I T N DC/DC C Product Data Sheet D ATT O C IS HL01U NREGULATED ONVERTER FEATURES l l l l l HIGH EFFICIENCY l NON-CONDUCTIVE CASE l SURFACE MOUNT PACKAGE SMD LOW COST INTERNAL FILTERING SURFACE MOUNT CONSTRUCTION TEMPERATURE RANGE: -25°C TO +70°C

smd jst 37

Abstract: C603 smd rgb ES0603V
Contextual Info: SMD-LEDs FÜR ELPAC-LICHTLEITER SMD-LEDs fü r ELPAC L ich tle ite r Die S M D -L E D s s in d id e a l fü r d e n E in sa tz de r E L P A C -L ich tle ite r d e r S erien \EL 90. EL 91. EL 92. EL 93. EL 95, EL 98. EV L 1 u n d E F LS D ie S e rie n E S 0 6 0 3 u n d E S 0 8 0 5 b e sitze n e in e g la s k la re Linse m it e in e m 140

diode smd ED 56a

Abstract: IRF7416 MS-012AA tr/diode smd ED 56a
Contextual Info: PD - 9.1356C IRF7416 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V

CDSW16-G

Contextual Info: c o A tc m r SMD Switching Diode S M D D io d e s S p e c ia lis t CDSW16-G High Speed RoHS Device Features SO D -123 - F a s t S w itc h in g S p e e d - E l e c t r i c a l l y Id e n tic a l to S t a n d a r d J E D E C „ -H ig h C o n d u c t a n c e

IRF7603

Abstract: marking code EA SMD MOSFET
Contextual Info: PD - 9.1262C IRF7603 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D S 1 8 S 2 7 D S 3 6 D 4 5 D G VDSS = 30V

BB02-BD

Contextual Info: CUSTOMER PRODUCT SPECIFICATION SHEET BBÖ2-CC B B 0 2 -C C 1.27mm F E M A L E HDR SMD D U A L E N T R Y D U A L R O W B O A R D TO B O A R D - 06 t o 60 C O N T A C T S L O W P R O F I L E D . 2mm .27 x No C o n t a c t s / 2 FEATURES LOW PROFILE: 2.2mm HEIGHT

2d SMD PNP TRANSISTOR

Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
Contextual Info: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088

MIL-STD-750 METHOD 2026

Abstract: CDBFR0230L
Contextual Info: coA tcm r SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t C D B F R 0 2 3 0 L R o Hs Device lo = 2 0 0 m A V r = 30 Volts 1 0 0 5 (2 5 1 2 ) 1 Features Low forward voltage. D e s i g n e d f o r m o u n t i n g on s m al l s u r f a c e . E x t r e m e l y t hi n / l e a d l e s s p a c k a g e .

Contextual Info: C U S T O M E R P R O D U C T S PECI FI CATI ON S H E E T BBÖ2-CC B B 0 2 -C C 1.27mm F E M A L E HDR SMD D U A L E N T R Y D U A L R O W B O A R D TO B O A R D - 06 t o 60 C O N T A C T S L O W P R O F I L E D . 2mm .27 x No C o n t a c t s / 2 FEATURES

Contextual Info: Dielectric Band-pass Filters Series D Multilayer Diplexers Series: D Designed for dual-band telephones (GSM/DCS, AMPS/PCS). n Features l Miniaturized SMD (3.2 ´ 1.6 ´ 1.2 mm) l High isolation l Low insertion loss n Recommended Applications l Dual-band telephones (GSM/DCS, AMPS/PCS)

diplexers

Contextual Info: Dielectric Band-pass Filters Series D Multilayer Diplexers Series: D Designed for dual-band telephones (GSM/DCS, AMPS/PCS). n Features l Miniaturized SMD (3.2 ´ 1.6 ´ 1.2 mm) l High isolation l Low insertion loss n Recommended Applications l Dual-band telephones (GSM/DCS, AMPS/PCS)

Contextual Info: SCHOTTKY BARRIER DIODE C20T03QL C 2 0 T 0 3 Q L-11A 20A / 30V F E A TU R ES o lSQUARE-PAKl TO-263AB SMD P a c k a g e d in 2 4 m m T a p e a n d R e el : C 2 0 T - -Q L oT abless TO-220 : C20T-QL-11A o D u a l D io d e s —C a th o d e C o m m o n o L o w F o r w a r d V o lta g e D ro p

Contextual Info: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA LED SMD LAMP T L G 1 0 0 2 , T L G D 1 002, T L P G 1 002 T L O E 1 0 0 2 , T L Y E 1 0 0 2 , T L S 1 0 0 2 T L RA 1 0 0 2 UNIT :mm O L E D SURFACE MOUNT DEVICE FEATURES • 2.0 L X 1.25 (W) X 1.1 (H) mm SIZE POLARITY O— IN­

Contextual Info: O O N M P T SMDA T SMDA WATT MULTI LINE TVS ARRAY DEScRIPTIoN T SMDA TTL T SMDA IEC So MOS ESD IEC P P G W G A L C R HS C REACH C APPLIcATIoNS IEC IEC IEC L L P P L P U G B V L V ESD A EFT A S A VC L L P L D P R D V RS M C P S M V L L L P RS M E E E P V MEchANIcAL chARAcTERISTIcS

Contextual Info: coA tcm r SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBF54 RoHs Device lo = 2 0 0 m A V r = 30 Volts Features 1005(2512) 1 Low forward Voltage. D e s i g n e d f o r m o u n t i n g on s m al l s u r f a c e . E x t r e m e l y t hi n / l e a d l e s s p a c k a g e .

Contextual Info: Power Inductor Single Winding, SMD CTX01-16025 Applications • DC-DC converters e v i t c e f f E , d l i e t u n n i u t r n o o c 2 1 Dis 2 . , d 1 e 3 t e t l s p u e g d s Au i y r d o e t d n inve commen ble. e a r l i o a v N a t n e m e c a l rep • Battery power

CDBF70

Abstract: ra04
Contextual Info: coA tcm r SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBF70 RoHs Device lo = 70 mA V r = 70 Volts Features 1005(2512) 1 Low forward Voltage. D e s i g n e d f o r m o u n t i n g on s m al l s u r f a c e . E x t r e m e l y t hi n / l e a d l e s s p a c k a g e .

Contextual Info: WMS512K8-XXX M/HITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • A c c e s s T im e s 17, 20, 25, 35, 4 5, 5 5 n s ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R ange ■ M IL - S T D - 8 8 3 C o m p l ia n t D e v ic e s A v a i l a b l e

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ DE5LC40 t l l O U T L IN E Unit I mm Weight 0.326g Typ Package I E-pack m 40 0V 5A Feature • SMD G6 • SM D • Low Noise • trr=50ns • trr- 5 0 n s • T . 'f • Switching Regulator • DC/DC 3 y i { - 9 • D C /D C C onverter

702 mosfet smd marking

Abstract: 7022D IRLMS1503 703Y smd diode ED 46 Lm 304 PN
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1508 IRLMS1503 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET D D G A D 1 6 2 5 D 3 4 S Description Fifth Generation HEXFETs from International Rectifier

doan

Abstract: HYB25D1G800AE DDR200 DDR266 DDR266A DDR400 DDR400B
Contextual Info: D a t a S he et , V 0. 5, J u l y 2 00 3 H Y B 25 D 1 G 4 0 0 A [ C / E / F / T ] L H Y B 25 D 1 G 8 0 0 A [ C / E / F / T ] ( L ) H Y B 25 D 1 G 1 6 0 A [ C / E / F / T ] ( L ) 1 - G b i t D o u b l e D a ta R a t e S D R A M Green Product L e a d - C o n t a i n i ng P r o d u c t

QW-BA011

Abstract: smd diode 723 smd diode Lf smd diodes smd schottky diode marking 05 smd diode sod723
Contextual Info: COAtCHII’ SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBP0130R * lo=100mA V r=30V RoHS Device Features - S m a l l s u r f a c e m o u n t i n g t yp e. - L o w r e v e r s e c u r r e n t a nd l o w f o r w a r d v o l t a g e . - H i g h rel iabi li ty.

SMD DIODE MARKING 14

Abstract: CDBP00340 smd diodes diode schottky 40v 30ma smd schottky diode marking 05 smd diode sod723
Contextual Info: COAtCHII’ SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBP00340 lo=30mA V r=40V RoHS Device * Features - S m a l l s u r f a c e m o u n t i n g t yp e. - L o w r e v e r s e c u r r e n t a nd l o w f o r w a r d v o l t a g e . - H i g h rel iabi li ty.

CDSUR400B

Contextual Info: c o A tc m r SMD Switching Diode S M D D io d e s S p e c ia lis t C D S U R 4 0 0 B R o H s Device High Speed Features 0 60 3 (1608) 1 D e s i g n e d f o r m o u n t i n g on s m a l l s u r f a c e . Extremely thin/leadless package. L ow leaka ge current.