L 439 Search Results

104j 400v

Abstract: 104j capacitor PANASONIC APE 104J FILM capacitor
Contextual Info: I THIRD ANGLE PROJECTION i TPM rnnp • ECWF4223R // 4243R( L L 4273R( 4303R( L L 4333R( 4363R( 4393R( 4433R( L L L L lì II II II li II II il II II il II II II 4473R( 4513R( 4563R( 4623R( 4683R( 4753R( 4823R( 4913R( L L L L L L L L O'. 03 * L ( * ( 2 2 3 ) Ì 2. 5

WFL104J

Contextual Info: N l iHIRD ANGLE PRoJEEru ALTERATION CAPACITANCE ITEM CODE DIMENSIONS * F T L H F ECWF42230L 0.022(223) 4243 ( )L 4273()L 0.024(243) 0.027 (273) 6 .0 6.2 .0 8 . 6 1O 8 .8 9 .0 " 4303 ( )L 0.03 6 .4 9.3 43330L 0.033(333) H 43630L 0.036 (363) " 4393()L

Contextual Info: MC74LVXT4051 FUNCTION TABLE VCC 16 1 X4 X2 X1 X0 X3 A B C 15 14 13 12 11 10 9 2 X6 3 X 4 X7 Control Inputs Enable C L L L L L L L L H L L L L H H H H X 5 6 7 8 X5 Enable VEE GND Figure 1. Pin Connection and Marking Diagram Top View Select B A L L H H L L

Irf 1540 N

Abstract: Irf 1540 G IRFBA1404P MOSFET IRF 1540 HEXFET pinout
Contextual Info: PD - 93806 AUTOMOTIVE MOSFET Typical Applications l l l l IRFBA1404P HEXFET Power MOSFET Anti-lock Braking Systems ABS Electric Power Steering (EPS) Electric Braking Radiator Fan Control D VDSS = 40V Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance

smd diode a7

Abstract: EPCOS 800 314 epcos 2701 resonator 433.92 Mhz two-port saw resonator dcc6c footprint EPCOS 230 05 O EPCOS 230 00 O footprint dcc6c data sheet for all smd components footprint qcc8c
Contextual Info: Preliminary Data Sheet Microwave Ceramics 2-Pole Filter for DAB SMD 1472 MHz B69812-N1477-A540 Index Page 2 Page 3 Page 4 l l l l l l l l l l Application Features Component drawing Recommended footprint Characteristics Maximum ratings Typical passband characteristic

DS2200-1110

Abstract: DIODO LASER diodo led DS2200 DC5-2200 Datalogic RS485-RS232 93ACC1040 22 DIODO RS-485RS-232
Contextual Info: DESCRIZIONE PRODOTTO DS2200 U N AT T E N D E D S C A N N I N G S Y S T E M S DS2200 Scanner Laser ultra compatto Caratteristiche l l l l l l l l l l l Dimensioni ultra compatte 50 x 40 x 28 mm Peso minimo: 150 g Decoder integrato Velocità di scansione: 500 scans/sec

Contextual Info: 1210 Size Ceramic Chip Capacitor _ A l l Cap mimReel Order W / Y l Number 607-415 607-418 607-422 607 427 500 d c 607-433 ”, 607-439 K ee l 607-447 607-456 607-468 607-482 607-510 607-522 607-533 607 547 607-568 607-610 607-615 607-622 500 PC. Z5U 5(

smd DIODE code marking 20A

Abstract: smd code diode 20a irf 539 DATA MOSFET IRF 603 power mosfet 500v 20a circuit SMD-247 IRFP460AS irf 480
Contextual Info: PD- 94011 IRFP460AS SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements

IRF640N

Abstract: AN-994 IRF640NL IRF640NS International Rectifier irf640n
Contextual Info: PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description HEXFET Power MOSFET l D RDS on = 0.15Ω

st l 9302

Abstract: IRFP460P ID 9302
Contextual Info: PD- 93946 IRFP460P l l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder Plated for Reflowing HEXFET Power MOSFET D VDSS = 500V RDS on = 0.27Ω G

AN-994

Abstract: IRF630N IRF630NL IRF630NS
Contextual Info: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω

Contextual Info: PD - 93959 IRFZ48V HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ

IRFP260N

Abstract: IRFP260N applications P 838 X MOSFET
Contextual Info: PD - 94004 PROVISIONAL IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω

International Rectifier irf640n

Abstract: irf640n N-Channel MOSFET 200v
Contextual Info: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A

IR 717p

Abstract: 1274 LTL-1294A LTL1274A
Contextual Info: t . jLITE-ON INC 31E J> 1 Æ m ¡r : * E T v.V . i : [ ' D P ä L T L -1 2 04 A /71 7 R L T L -1 214 A /717P L T L -1 2 24 A /71 7 H R L T L-1234A /717G M SS3b3fci7 00G507Ô 5 L 1 Ö T ILTNr IN D IC A T O R S RED ‘ ' " L T L -1 254A /7 1 7 Y Y E LLO W

IRFP250N

Abstract: irfp250n DRIVER 4.5v to 100v input regulator
Contextual Info: PD - 94008 IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A

IRFZ34V

Abstract: smps 2000 watts circuit
Contextual Info: PD - 94042 IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ

IRF*260

Abstract: IRFP260N to irfp260n IRFP260N applications IRFP260N data sheet IRFP260N IR 4.5v to 100v input regulator
Contextual Info: PD - 94004A IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω G ID = 50A

ASTM-B16

Abstract: QQ-B-613
Contextual Info: 31-70261 R E V 1S I O N S DRAWING TH 1 RD ANGLE NO. PRO J. REV D E S C R 1P T I O N DATE ECO A R E L E A S E TO MFG. 3/6/02 43986 <§> APPR CPM NOT E S : I. M A T E R I A L S OF C O N S T R U C T I O N : S H E L L , B OD Y , B A R R E L , F E R R U L E , S P A C E R & R E T A I N E R R I NG = B R A S S A S T M - B 1 6 H 0 2, C 3 6 0 0 0 , N I C K E L P L A T E D ( . 0 0 0 1 0 0 MI N T H I C K )

DLL6010-R

Abstract: OM6010-R Datalogic DLL6110-R dll6010m HLS6010 DLL6010-M LA6010 220 vac TO 12 vdc DRAGON* dll6010-r
Contextual Info: PRODUCT DESCRIPTION DLL6010-R H AND-H ELD D EVICES DLL6010-R Cordless industrial laser gun Features l l l l l l l Three versions available: - DLL6010-R NM without display and with NiMH batteries - DLL6110-R NM with display and NiMH batteries - DLL6110-R LI with display and

IRF630NL

Contextual Info: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET

Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications