L 3005 TRANSISTOR Search Results

PS2501 optocoupler

Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
Contextual Info: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar

current to voltage converter using 741

Abstract: ZN425 ZN424 ZN425E8 ZN424P ZN425E-8 ramp generator 555 ZN425E 6 bit r2r ladder 741 as buffer amplifier
Contextual Info: i E C S E M I p l e s s e m - W - y C~~Ò N D U C T O R~~S~| 3005-1.0 ZN425E8 8-BIT D-A/A-D CONVERTER The ZN425 is a monolithic 8-bit D-A converter containing n R-2R ladder network of diffused resistors with precision ipolar switches, and in addition a counter and a 2.5V

ax 3003

Abstract: ax 3005 3003
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRW3001 MRW3003 MRW3005 M icrowave Power Transistors . . designed prim arily for large-signal output and driver am plifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers

ax 3003

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3001 MRW3003 MRW3005 The RF Line M icrowave Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers

MOTOROLA 13003

Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER

MM3007

Abstract: MM3005 MM3006 MM5007 MM5005 MM5006
Contextual Info: MM3005 silicon MM3006 MM3007 MPN S ILICOÍM A N N U LA R NPN SILICON A U D IO TRANSISTORS TRANSISTORS . . . designed fo r high-voltage audio driver am plifiers and generalpurpose switching and oscillator applications. High C ollector-E m itter Breakdown Voltage —

transistor 30054

Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
Contextual Info: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications

2n3411

Abstract: 2N3419 2N3418
Contextual Info: n iC R O SEH I CORP/ üiatertow n SDE D 'OMTIba POWER TRANSISTORS DG1SM77 HÜS IUNIT JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEA TU RES • Meets MIL-S-19500/393

2N3419

Abstract: 2n341 2N3420 2N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEATURES • M eets MIL-S-19500/393 • C ollector-Base Voltage: up to 125V • Peak Collector Current: 5A

2N3419

Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e

ITT ccu 3000 i

Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

40 pins ic used in color television with ir captu

Abstract: semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027
Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

A23041

Abstract: 2N4150 Unitrode transistors data To5
Contextual Info: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode power transistors provide a unique com bination o f low saturation voltage, high gain and fast switching. They are ideally suited fo r power supply pulse

MP1470

Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
Contextual Info: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34

Contextual Info: MICROSEMI CORP/ UATERTOUN SDE 13471b3 GG124ÔS Sfil M U N I T POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN F EA T U RES • M eets MIL-S-19500/394 • Collector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fast S w itch in g

motorola 2961

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRW3001 MRW 3003 MRW 3005 M icrow ave Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.5 to 3 .0 G H z frequency range. • Designed for C lass B or C, C om m on B ase Linear Pow er Amplifiers

M3002M

Abstract: M3006M transistor 3005 2 L 3005 TRANSISTOR transistor 3005 transistor 3006 3003 BR TRANSISTOR transistor m 3003 g 3006M in 3003 TRANSISTOR
Contextual Info: MOTOROLA SC Í X S T R S / R 6367254 FJ "Tb MOTOROLA SC j>F|t,3L,7ES4 00üE35ti S 96D CXSTRS/R F 82356 _ 7" - ¿ - D 33 MM3001 thru MM3003 CASE 79-02, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Sym bol R a tin g C o lle c to r-E m itte r V o lta g e

Contextual Info: POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES • M e ets MIL-S-19500/394 • C ollector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fa st Sw itch in g • Low Saturation Voltage D E S C R IP T IO N U nitrode power tra n sistors provide a

RS 3005 CL

Contextual Info: LPV521 LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier Texa s In s t r u m e n t s Literature Number: SNOSB14B t í a l LPV521 Semiconductor Nanopower, 1.8V, RRIO, CMOS Input, Operational Am plifier General Description Features The LPV521 is a single nanopower 552 nW am plifier de­

Contextual Info: MC100EP14 3.3V / 5V 1:5 Differential ECL/PECL/HSTL Clock Driver Description The MC100EP14 is a low skew 1−to−5 differential driver, designed with clock distribution in mind, accepting two clock sources into an input multiplexer. The ECL/PECL input signals can be either differential or

Contextual Info: MC100EP40 3.3V / 5V ECL Differential Phase-Frequency Detector Description The MC100EP40 is a three−state phase−frequency detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Advanced design

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

3ghz npn transistor 1w

Abstract: rca 3001 transistor RCA3001 RCA3003 HF-46 XI 3003 RCA3005 telemetry 406 1651 ghz
Contextual Info: File No. 6 5 7 . RF Power Tran sisto rs Solid State Division RCA3001 R C A3003 RCA3005 1-W, 2.5-W , and 4.5-W 3-GHz Emitter-Ballasted N-P-N Transistors Features: • 1-W output with 7-dB gain min. at 3 GHz (RCA3001) ■ 2.5-W output with 5-dB gain (min.) at 3 GHz (RCA3003)

Contextual Info: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer