L 293D Search Results

ls293

Abstract: ls290 binary to BCD 8421 LS293-4-BIT LS90 LS93 3 bit ripple counter T74LS293
Contextual Info: ses LS290-DECADE COUNTER LS293-4-BIT BINARY COUNTER DESCRIPTION T 5 4 L S /T 7 4 L S 2 9 0 and T 5 4 L S /T 7 4 L S 2 9 3 are - gn-speed 4-bit ripple type counters partitioned in•: rwo sections. E ach counter has a divide-by-two section and either a divide-by-five L S 2 90 or

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

J294

Abstract: TAJE226M035R 465B AN1955 MRF5S21150HR3 MRF5S21150HSR3 j246
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

J1103

Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

1812y224kxa

Abstract: J1175
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors - Commercial and Industrial Grade SMD Tantalum Chip AND TEC I INNOVAT O L OGY 293D Tantalum N HN CAPACITORS O 19 62-2012 293D Solid Tantalum SMD, Molded Case Standard Industrial Grade Capacitor KEY BENEFITS

Contextual Info: L M K 0 4 8 1 6 E V A L U A T I O N B O A R D O P E R A T I N G I N S T R U C T I O N S LMK04816 Low-Noise Clock Jitter Cleaner with Dual Loop PLLs LMK04816 Evaluation Board Operating Instructions Texas Instruments June 2012 1 SNLU107 L M K 0 4 8 1 6 E V A L U A T I O N

circuit diagram ballast 24v

Abstract: AAT1231 200Hz PWM AAT1231-1
Contextual Info: a n a l o I g l i c L -H a n . 1 2 2 AAT1231 A pplication Note Using PW M Control with A A T1231/ 1231-1 The AAT1231 and AAT1231-1 are high frequency, high efficiency constant current boost converters with a maximum operating voltage of 24V. These are ideal solutions for backlight applications driving up to six white

74lsxxx

Contextual Info: S G S-THOUSON 0?E D | 7151237 D D l t a ? 1! 2 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS _ 67C Ü 4 0 8 L S 2 9 0 -D E C A D E C O U N T E R L S 2 9 3 -4 -B IT B IN A R Y C O U N T E R DESCRIPTION The T54LS/T74LS290 and T54LS/T74LS293 are

Contextual Info: TPS73HD301, TPS73HD318, TPS73HD325 DUAL-OUTPUT LOW-DROPOUT VOLTAGE REGULATORS S L V S 1 6 7 A -J A N U A R Y 1999 Dual Output Voltages for Split-Supply Applications PWP PACKAGE TOP VIEW 3.3-V/Adjustable Output, 3.3 V/1.8 V, and 3.3 V/2.5 N C l~ T ~ 2 1G ND m i 3

Contextual Info: asmais ooi'mB 022 A C O M P A N Y OF TYPE 592D Solid Tantalum Chip Capacitors T antamount , L o w Profile, Conformal Terminals SPRAGUE Maximum C/V FEATURES • Low profile .047" [1,2mm] height nominal • Compatible with 293D molded chip mounting pad layout

293D

Abstract: current source circuit diagram CS-293D fc-30KHz L 293D Four Channel Push-Pull Driver
Contextual Info: CS-293D _ PUSH-PULL FOUR CHANNEL 600mA DRIVER DESCRIPTION T he C S -293 D is a q u ad p u s h -p u ll d riv e r inte grated c irc u it c a p a b le of d e liv e rin g o u tp u t c u rre n t to 600m A pe r cha nnel. E ach ch a n n e l is c o n tro lle d by a T T L -c o m p a tib le lo g ic in p u t Each fu ll-b rid g e d riv e r

RESISTOR MARKING CODE 85X

Contextual Info: A COMPANY TYPE 592D Solid Tantalum Chip C apacitors Profile, Conformal Term inals M axim um C/V T a n t a m o u n t , L o w OF SPRAGUE FEATURES • Low profile .047" [1 ,2mm] height nominal • Compatible with 293D molded chip mounting pad layout iiiiililSiii

293D335X9016B2TE3

Abstract: 293D107X9010C2TE3 293D225X9035C2TE3 293D336X9010B2TE3 593D475X9050D2T 293d227x9010d2te3 293D106X0025C2TE3 593D226x9025D2TE3 593d227x9010d2te3 293D227X9010E2TE3
Contextual Info: 1836-2012.qxp:QuarkCatalogTempNew 9/11/12 1:10 PM Page 1836 TEST & MEASUREMENT 21 Tantalum Capacitors 293D Series Solid Tantalum Chip Capacitors, TANTAMOUNT RoHS H TW W P L INTERCONNECT TH Min. Features ᭤ Molded Case Available in Five Case Codes ᭤ Compatible with “High Volume” Automatic Pick and Place Equipment

sprague capacitor 738d

Abstract: 100 6n tantalum sprague capacitors 735D VMN-SG21 Molded Axial Leaded capacitor Capacitor electroly CLR81 293D 298D 592D
Contextual Info: V I S H A Y I N T E R T E C HN O L O G Y , I N C . C apacitors Solid Electroly te Solid Electroly te Leaded Gelled Electroly te Leaded w w w. v i s h a y. c o m S e l e ctor G uid e Tantalum Capacitors Solid Electrolyte Tantalum Chip Capacitors Type Capacitance

5bti

Contextual Info: TPS7133QPW P, TPS713 3Y M IC R O P O W ER LO W -D R O P O U T LD O V O L T A G E R E G U L A T O R S SLVS101A-FEBRUARY 1 9 9 5 - REVISED AUGUST 1995 Thermally Enhanced Surface-Mount Package (PWP) PWP PACKAGE (TOP VIEW) High-Current (500-mA) LDO Regulator

B140 SMA

Abstract: YAGEO RC2512 107j capacitor electrolit capacitor YAGEO RC2512 1w RS-232 DB9(F) connector footprint u7a capacitor 1000uf CR-21-471J-T Silabs Silicon Laboratories
Contextual Info: TEMPCOMPRTC-RD TE M P E R A T U R E C O M P E N S A T E D R E A L T I M E C L O C K REFERENCE DESIGN KIT USER'S GUIDE 1. Kit Contents Temperature Compensated RTC Evaluation Board AC to DC Power Adapter Straight DB9 serial cable male-female Straight DB25 parallel cable (male-male)