L 200 Search Results

Contextual Info: 1~ Rectifier Bridges Contents 1 2 3 1 4 5 6 2 2000 1600 1400 1200 20 l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l 21 32 32 40 l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l

Contextual Info: TQFP10Q— P— 1414— 0.50A Uniiii nn ic nn*n o «m , n w |l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l^ a v ' t-@ n 15, o tg e Feb,2007

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

RF Transceivers

Abstract: 50-200MHZ
Contextual Info: RF Transceivers Cellular Telephony / RF Radio Interfaces WIRELESS l ACE9020 l ZL20200 l l l l l 90 50-200MHz, Baseband, Single IF I/Q Baseband, I/Q 900MHz, 1900MHz l l l l l Dual RF ZL20250 l l l l l 90 50-200MHz, Baseband, Single IF I/Q Baseband, I/Q 900MHz,

178-G2

Abstract: C30B
Contextual Info: PCB Relay 178 G2 l l l l l l l l l l l l l l l l Standard type: Qu@ W ashable High resistance version. polarized Pull-in power: 1 0 0 mW Nominal operation coil power: 200 mW Contact arrangement: 2 change-over contacts C/O Twin contact Type of contact: Hard silver, gold-plated

aic1633a

Abstract: AIC1633 2sb1424 7 pin TOP switch in TO 220 type package
Contextual Info: AIC1633 200mA, Step-Up DC/DC Converter n l l l l l l l n l l l l l l l l n FEATURES High Efficiency Up To 87%. Adjustable Output Voltage with Two Resistors AIC1633A DESCRIPTION The AIC1633 is a high efficiency step up DC/DC converter. Only four external components are

M.105007

Abstract: 10-40793 M.105009 M.112004 10-40552-12HC M105009 glenair M.125003 M105003 125001 M1173
Contextual Info: 2006 Glenair, Inc. GLENAIR, INC. • 1211 AIR WAY • GLENDALE, CA 91201-2497 • 818-247-6000 • FAX 818-500-9912 www.glenair.com CAGE Codes 06324 3 CONTACT TYPE C.E. C.E. C.E. C.E. C.E. LC C.E. L C.E. L L L L L L R C.E. L L L L L C.E. L L L C.E. L L

Contextual Info: AIC1633 200mA, Step-Up DC/DC Converter n l l l l l l l n l l l l l l l l n FEATURES High Efficiency Up To 87%. Adjustable Output Voltage with Two Resistors AIC1633A DESCRIPTION The AIC1633 is a high efficiency step up DC/DC converter. Only four external components are

Contextual Info: Type SXR • Radial Leaded Capacitors I I I K R I B I t l K k l l l l l l l l l l l R i l K MallorY M l l I ■ Low Impedance ■ Low ESR ■ High Ripple ■ Long Life ■ 2000 Hour Load Life For Dia < 8mm; 3000 Hours for 10mm Dia ■ 5000 Hour Load Life For Dia

smd PULSE TRANSFORMER

Abstract: SMD transformer Base-T 2000Vrms Hi Pot ethernet transformer Application Note transformer 20 pin 020C TS800-06
Contextual Info: 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS800-06 LF DATA SHEET Page : 1/ 1 Feature l l l l l l l l l l l IEEE 802.3 10 BASE5/10BASE 2 and ECMA compatible. 16 PIN SMD package. Turn Ratio: 1:1±5%. Dissipation rating: 75mW. HI-POT: 2000Vrms. Insulation resistance 10,000M Min. @50 V DC.

TS800-06

Abstract: 020C
Contextual Info: Bothhandusa.com TS800-06 LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS800-06 LF DATA SHEET Page : 1/ 1 Feature l l l l l l l l l l l IEEE 802.3 10 BASE5/10BASE 2 and ECMA compatible. 16 PIN SMD package. Turn Ratio: 1:1±5%. Dissipation rating: 75mW. HI-POT: 2000Vrms.

JTOS-2200P

Abstract: BK377 JTOS2200P PPL FREQUENCY SYNTHESIZER JTOS-2200
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS SURFACE MOUNT, JTOS-2200P 2000 MHz to 2200 MHz FEATURES l l l l l wide frequency range linear tuning characteristics low phase noise suitable for PLL & synthesizer IC's 5 volts supply & tuning voltage APPLICATIONS l l l l CASE STYLE: BK377

IRFP260MPBF

Contextual Info: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

Contextual Info: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V

irfp260m

Abstract: IRFP260MPBF IRF*260 4.5V to 100V input regulator
Contextual Info: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

Gunn Diode

Abstract: OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode radar module gunn diode datasheet radar gunn diode gunn diode radar gunn diode oscillator GaAs Gunn Diode diode gunn FMCW Radar
Contextual Info: XXXXXX AC2001 Millimeter Wave gunn Oscillator Module Replaces March 1999, version DS5074-2.0 DS5074-3.0 January 2000 Features l l l l High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications l l l l

power MOSFET IRF640

Abstract: "thermal via" PCB D2PAK hexfet irf640 linear applications of power MOSFET IRF640 marking F53 IRF640S AN-994 IRF640 IRF640L
Contextual Info: PD - 9.902A IRF640S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V

IRFP260NPBF

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

HY5PS12821

Abstract: HY5PS121621 JC-16
Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F Rev. 0.6 / Apr.2003 1 HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F REVISION HISTORY Rev. No. Rev. Date Page of Rev. Description of Change 0.2 Jun.2002

200cmax

Contextual Info: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101

IRFP250NPbF

Abstract: 035H IRFPE30 4.5v to 100v input regulator
Contextual Info: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

Contextual Info: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

035H

Abstract: IRFPE30 4.5v to 100v input regulator IRFP250NPBF
Contextual Info: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

MB90F562B

Contextual Info: MB90F562B - 1 Udd= 5 a. U 1H / U 1L EU] * — 1 1 1 1 °U rn 3.9 3.7 3.3 .5 *-1 l l I .5 l .4 I I .7 1.2 U1H : uil 1 b. U2H/U2L EU] 4.7 113U Yen i i -.3 -.5 800 I l d. Trise I I 1 l 1 I EuS] I l 1 l l 200 60 i i *-" i l e. Dutu 55 [/] l l l I I