L 200 Search Results

Contextual Info: TQFP10Q— P— 1414— 0.50A Uniiii nn ic nn*n o «m , n w |l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l|l^ a v ' t-@ n 15, o tg e Feb,2007

smd PULSE TRANSFORMER

Abstract: SMD transformer Base-T 2000Vrms Hi Pot ethernet transformer Application Note transformer 20 pin 020C TS800-06
Contextual Info: 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS800-06 LF DATA SHEET Page : 1/ 1 Feature l l l l l l l l l l l IEEE 802.3 10 BASE5/10BASE 2 and ECMA compatible. 16 PIN SMD package. Turn Ratio: 1:1±5%. Dissipation rating: 75mW. HI-POT: 2000Vrms. Insulation resistance 10,000M Min. @50 V DC.

TS800-06

Abstract: 020C
Contextual Info: Bothhandusa.com TS800-06 LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS800-06 LF DATA SHEET Page : 1/ 1 Feature l l l l l l l l l l l IEEE 802.3 10 BASE5/10BASE 2 and ECMA compatible. 16 PIN SMD package. Turn Ratio: 1:1±5%. Dissipation rating: 75mW. HI-POT: 2000Vrms.

AC Transformer 50A 100V inductance

Abstract: 035H IRFPE30 4.5v to 100v input regulator
Contextual Info: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

irfp260m

Abstract: IRFP260MPBF IRF*260 4.5V to 100V input regulator
Contextual Info: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

Gunn Diode

Abstract: OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode radar module gunn diode datasheet radar gunn diode gunn diode radar gunn diode oscillator GaAs Gunn Diode diode gunn FMCW Radar
Contextual Info: XXXXXX AC2001 Millimeter Wave gunn Oscillator Module Replaces March 1999, version DS5074-2.0 DS5074-3.0 January 2000 Features l l l l High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications l l l l

IRFP260NPBF

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

IRFP250NPbF

Abstract: 035H IRFPE30 4.5v to 100v input regulator
Contextual Info: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

MB90F562B

Contextual Info: MB90F562B - 1 Udd= 5 a. U 1H / U 1L EU] * — 1 1 1 1 °U rn 3.9 3.7 3.3 .5 *-1 l l I .5 l .4 I I .7 1.2 U1H : uil 1 b. U2H/U2L EU] 4.7 113U Yen i i -.3 -.5 800 I l d. Trise I I 1 l 1 I EuS] I l 1 l l 200 60 i i *-" i l e. Dutu 55 [/] l l l I I

irfp250m

Abstract: IRFP250MPBF 76T marking 4.5V to 100V input regulator
Contextual Info: PD - 96292 IRFP250MPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

Contextual Info: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101

IRFP250NPbF

Abstract: IRFP250N 035H IRFPE30 irfp250n* applications 4.5v to 100v input regulator
Contextual Info: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

Hynix Cross Reference

Abstract: DDR400B DDR200 DDR333 DDR400
Contextual Info: 1HY5DU12422C L TP HY5DU12822C(L)TP HY5DU121622C(L)TP Revision History Revision No. 1.0 History First Version Release Rev. 1.0 / Mar. 2005 Draft Date Remark Mar. 2005 2 1HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP DESCRIPTION The HY5DU12422C(L)TP, HY5DU12822C(L)TP and HY5DU121622C(L)TP are a 536,870,912-bit CMOS Double Data

Contextual Info: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω

Contextual Info: 2X5 BIDI 1.25Gbps Transceiver Module SWFF5251-13-1 2 23 Product Data sheet VER0.0/05-15-2006 Features l 1550nm DFB laser diode with drivers as transmitter l l l l l l l InGaAs PIN with TIA and post-amplifier as receiver 1550 nm wavelength output 1310 nm wavelength input

irf640s

Abstract: IRF640 IRF640L AN-994 ST IRF640
Contextual Info: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω

AN-994

Abstract: IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
Contextual Info: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω

G957

Abstract: IEC825
Contextual Info: SFP 155Mbps With DDM Bi-Directional Transceiver SWFP8131-13-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1310nm MQW FP Laser diode transmitter 1490nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

IEC825

Abstract: 1550nm analog receiver
Contextual Info: SFP 155Mbps With DDM Bi-Directional Transceiver SWFP6241-23-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1490nm DFB Laser diode transmitter 1550nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

IEC825

Abstract: SFP L-16.2 DDM
Contextual Info: SFP 622Mbps With DDM Bi-Directional Transceiver SWFP5241-23-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1550nm DFB Laser diode transmitter 1310nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

IEC825

Contextual Info: SFP 622Mbps With DDM Bi-Directional Transceiver SWFP5241-13-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1550nm DFB Laser diode transmitter 1310nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

swff3151-13-1

Contextual Info: 2X5 BIDI 1.25Gbps Transceiver Module SWFF3151-13-1 2 23 Product Data sheet VER0.0/05-15-2006 Features l MQW FP 1310nm laser diode with drivers as transmitter l l l l l l l InGaAs PIN with TIA and post-amplifier as receiver 1310 nm wavelength output 1550 nm wavelength input

SWFP3151-13-1

Abstract: SWFP3151-13-125 IEC825
Contextual Info: SFP 1 .25Mbps With DDM Bi-Directional Transceiver SWFP3151-13-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1310nm MQW FP Laser diode transmitter 1550nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle

G957

Abstract: IEC825
Contextual Info: SFP 155Mbps With DDM Bi-Directional Transceiver SWFP8131-23-1 2 25+ Product Data sheet VER0.1/03-15-2006 Features l Transceiver unit with independent 1310nm MQW FP Laser diode transmitter 1490nm InGaAs PIN photodiode receiver l l l l l l l Meet SFP MSA and SFF-8472 with single LC receptacle