KYOSEMI CORPORATION Search Results

Kyosemi Corporation

Abstract: KDA16S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Preliminary Silicon Photodiode Array KDA16S Features •16 channel arrayy •Transparent epoxy mold SMD package Dimensions (unit: mm) Applications •Optical switches •Optical encoder •Pulse detectors

KPDA020

Abstract: KPDA050 KPDA050-H8
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Avalanche Photodiode KPDA020-H8/KPDA050-H8 Features • 1.5GHz response with 200 m dia. • 400MHz response with 500μm dia. • High gain • Low noise factor Dimensions (unit: mm) Applications

KPD3065C

Abstract: KPD3065
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD3065C Features •Transparent epoxy potting •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls

uv detector

Abstract: uv sensors uv PHOTO detector 340nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode

KPD101M32

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD101M32 Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical Optical switches •Optical encoders •Pulse detectors •Sensors and industrial controls

3v LED 50ma

Abstract: KED050CXH TA 7312 IR LED 810 nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Point-source Infrared LED KED050CXH Features •High reliability and long life •50µm emitting area Dimensions (unit: mm) Applications •High speed optical sensors Optical Encoders •Optical

KPT801C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801C Features •NPN phototransistor •Ceramic package •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolators

npn phototransistor

Abstract: phototransistor 600 nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT081M31 Features •NPN phototransistor •Transparent epoxy mold •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolator

high power infrared led

Abstract: KED358HQ-N KED358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . GaAlAs High Power Infrared LED KED358HQ-N Features •Parallel beam •High output power •Highly reliable hermetic seal •Uniform light intensity distribution Dimensions (unit: mm) Applications

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD30S Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls

KPT811

Abstract: KPT811H TF 5367
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT811H Features • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current Dimensions (unit: mm) Applications • Optical switches

mm glass lens phototransistor

Abstract: kpt801h Infrared phototransistor TO18 glass lens phototransistor
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801HB Features •NPN phototransistor packaged in a 2 leads TO-18 •Glass lens or visible-cut black epoxy lens •Low leak current Dimensions (unit: mm) Applications •Optical switches

660 880 940 led

Abstract: KED541H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi-wavelength LED KED541H Features •Red and IR emitters in a single package •Sharp directivity with a glass lens •Highly reliable hermetic seal •Direct modulation Dimensions (unit: mm)

KPD1201C

Abstract: 0905 KPD12
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD1201C Features • Small ceramic stem • Transparent epoxy potting Dimensions (unit: mm) Applications • Optical switches • Optical encoder • Pulse detectors • Sensors and industrial controls

KPD101M31

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD101M31 Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical Optical switches •Optical encoders •Pulse detectors •Sensors and industrial controls

KED050CXK

Abstract: 3v LED 50ma
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Point-source Infrared LED KED050CXK Features •High reliability and long life •50µm emitting area Dimensions (unit: mm) Applications •High speed optical sensors Optical Encoders •Optical

KED080RAXH

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Point-source Red LED KED080RAXH Features •High reliability and long life •80µm emitting area Dimensions (unit: mm) Applications •High speed optical sensors Optical Encoders •Optical

KED160RAXH

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Point-source Red LED KED160RAXH Features •High reliability and long life •160µm emitting area Dimensions (unit: mm) Applications •High speed optical sensors Optical Encoders •Optical

KED109Z-N

Abstract: high power infrared led IR LED 810 nm 5mm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . GaAlAs High Power Infrared LED KED109Z-N Features •Parallel beam •High output power •Highly reliable hermetic seal •Uniform light intensity distribution Dimensions (unit: mm) Applications

mm glass lens phototransistor

Abstract: phototransistor peak wave sensitivity 600 nm kpt801h
Contextual Info: Si Phototransistor KPT801H KPT801H H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors

phototransistor peak wave sensitivity 600 nm

Contextual Info: KPT811H Si Phototransister KPT811H • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current H6 ø4.65±0.1 4.5 Glass lens 6.6 max Features Applications 20±1 • Optical switches • Optical encoders • Photo-isolator

kpdx2ge spec

Abstract: KPDX2GE
Contextual Info: KPDX2GE 2.5Gbps PD-TIA Receiver with Long Focal Length Features • Long wok distance between PD can and fiber for integrating optical parts • Low noise and high gain transimpedance amplifier built-in to meet OC-48 • 5 pin package available for an independent PD

InGaAs array 1550nm

Abstract: InGaAs Photodiode 1550nm Photodiode 1550nm bandwidth InGaAs photodiode array chip 1550nm photodiode 8 Ghz
Contextual Info: KPA4-2N/8-2N 4/8 Channel InGaAs Photodiode Array Description 4- and 8-channel arrays with 250 micron (KPA4-2N and KPA8-2N, respectively) pitch are available as a standard product. Other number of channels, array pitch or a Si bench assembled array are available as

TA 7311

Abstract: TA 7312 TA 7311 transistor TA 8823 80um Kyosemi 5351 KPDE008-BP13
Contextual Info: KPDE008-BP13 1.3µm Bandpass PD Features • Low capacitance and high speed with a PIN structure • Low dark current • Low voltage operation • High reliability • Pigtail type is available as an option Applications • FTTH, FTTB • Digital and analog optical communication